ARTICLE IN ACADEMIC JOURNALS
NO | DETAILS OF ARTICLE IN ACADEMIC JOURNALS |
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1. |
Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride (100) thin film growth using ceramic target
2024
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
DOI :
10.1016/j.jmrt.2024.01.286
|
2. |
Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal-Organic Chemical Vapour Deposition
2024
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
CRYSTALS
DOI :
10.3390/cryst14040371
|
3. |
Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate
2024
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI :
10.1016/j.mssp.2024.108177
|
4. |
The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11-22) InGaN/GaN Light Emitting Diode
2024
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Norhaniza Binti Rizuan, Wong Yew Hoong Source :
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
DOI :
10.1002/pssb.202300542
|
5. |
Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Scientific Reports
DOI :
10.1038/s41598-023-35677-5
|
6. |
Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
SCIENTIFIC REPORTS
DOI :
10.1038/s41598-023-35677-5
|
7. |
The effect of ammonia partial pressure on the growth of semipolar (11-22) InGaN/GaN MQWs and LED structures
2023
Source :
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
DOI :
10.1016/j.mseb.2023.116368
|
8. |
Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
SURFACES AND INTERFACES
DOI :
10.1016/j.surfin.2023.103041
|
9. |
Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Surfaces and Interfaces
DOI :
10.1016/j.surfin.2023.103041
|
10. |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
SCRIPTA MATERIALIA
DOI :
10.1016/j.scriptamat.2022.115228
|
11. |
Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112 over bar 2) GaN: Crystal Quality and Surface Morphology Study
2022
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar Source :
CRYSTALS
DOI :
10.3390/cryst12020247
|
12. |
Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
2022
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
DOI :
10.1504/IJNT.2022.124519
|
13. |
Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering
2022
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar Source :
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
DOI :
10.1007/s10854-022-08186-w
|
14. |
Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review
2022
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
COATINGS
DOI :
10.3390/coatings12020275
|
15. |
Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11-22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)
2022
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Norhaniza Binti Rizuan, Wong Yew Hoong Source :
PHOTONICS
DOI :
10.3390/photonics9090646
|
16. |
Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector
2021
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar Source :
MATERIALS LETTERS
DOI :
10.1016/j.matlet.2020.129244
|
17. |
Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
JOURNAL OF ELECTRONIC MATERIALS
DOI :
10.1007/s11664-021-08768-0
|
18. |
Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Mohd Nazri Bin Abdul Rahman Source :
OPTICAL MATERIALS EXPRESS
DOI :
10.1364/OME.413417
|
19. |
The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Noor Azrina Binti Haji Talik Sisin, Wan Haliza Binti Abd Majid Source :
Journal of Materials Science: Materials in Electronics
DOI :
10.1007/s10854-020-05070-3
|
20. |
The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance.
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Wan Haliza Binti Abd Majid Source :
Materials Science in Semiconductor Processing
DOI :
10.1016/j.mssp.2020.105431
|
21. |
Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
2021
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar Source :
THIN SOLID FILMS
DOI :
10.1016/j.tsf.2020.138489
|
22. |
Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Optical Materials Express
DOI :
10.1364/OME.413417
|
23. |
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Noor Azrina Binti Haji Talik Sisin Source :
APPLIED SURFACE SCIENCE
DOI :
10.1016/j.apsusc.2020.148406
|
24. |
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
MICROELECTRONICS INTERNATIONAL
DOI :
10.1108/MI-02-2021-0012
|
25. |
The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI :
10.1016/j.mssp.2020.105431
|
26. |
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Wan Haliza Binti Abd Majid Source :
Applied Surface Science
DOI :
10.1016/j.apsusc.2020.148406
|
27. |
The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
DOI :
10.1007/s10854-020-05070-3
|
28. |
Enhanced Indium Adsorption and Surface Evolution of Semi-Polar (11-22) LED via a Strain Periodic Alternating Superlattice (SPAS-L).
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Materials Today Communications
DOI :
10.1016/j.mtcomm.2021.102441
|
29. |
The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Wan Haliza Binti Abd Majid Source :
Materials Science in Semiconductor Processing
DOI :
10.1016/j.mssp.2021.105836
|
30. |
The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar Source :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI :
10.1016/j.mssp.2021.105836
|
31. |
Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma
2021
Author(s) : Wan Haliza Binti Abd Majid, Ahmad Shuhaimi Bin Abu Bakar Source :
MICROELECTRONICS INTERNATIONAL
DOI :
10.1108/MI-02-2021-0015
|
32. |
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN based UVC LED.
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Microelectronics International
|
33. |
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a‑plane GaN
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Wan Haliza Binti Abd Majid Source :
Scientific Reports
DOI :
10.1038/s41598-021-89201-8
|
34. |
Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
MICROELECTRONICS INTERNATIONAL
DOI :
10.1108/MI-02-2021-0013
|
35. |
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
2021
Author(s) : Wan Haliza Binti Abd Majid, Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar, Noor Azrina Binti Haji Talik Sisin Source :
SCIENTIFIC REPORTS
DOI :
10.1038/s41598-021-89201-8
|
36. |
Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
SUPERLATTICES AND MICROSTRUCTURES
DOI :
10.1016/j.spmi.2020.106722
|
37. |
Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Effariza Binti Hanafi, Muhammad Imran Mustafa Bin Abdul Khudus Source :
OPTICAL FIBER TECHNOLOGY
|
38. |
Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD.
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Wan Haliza Binti Abd Majid, Muhammad Imran Mustafa Bin Abdul Khudus Source :
CrystEngComm
DOI :
10.1039/D0CE00113A
|
39. |
Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate.
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattice and Microstructures
DOI :
10.1016/j.spmi.2020.106722
|
40. |
Alq(3) saturable absorber for generating Q-switched pulses in erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus Source :
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
|
41. |
Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Effariza Binti Hanafi, Muhammad Imran Mustafa Bin Abdul Khudus Source :
OPTICS AND LASER TECHNOLOGY
|
42. |
Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Mohd.arif Bin Mohd. Sarjidan Source :
OPTICAL FIBER TECHNOLOGY
|
43. |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
2020
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar, Noor Azrina Binti Haji Talik Sisin, Omar Ayad Fadhil Al-zuhairi Source :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
|
44. |
Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method.
2020
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar Source :
Vacuum
DOI :
10.1016/j.vacuum.2020.109208
|
45. |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
2020
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar, Noor Azrina Binti Haji Talik Sisin Source :
Materials Science in Semiconductor Processing
DOI :
10.1016/j.mssp.2019.104700
|
46. |
Electronic surface, optical and electrical properties of p GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED.
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Noor Azrina Binti Haji Talik Sisin, Wan Haliza Binti Abd Majid Source :
Materials Science in Semiconductor Processing
DOI :
10.1016/j.mssp.2019.104757
|
47. |
MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications
2020
Author(s) : Hamzah Bin Arof, Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus Source :
JOURNAL OF MODERN OPTICS
|
48. |
Indium tin oxide coated D-shape fiber as saturable absorber for passively Qswitched erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus Source :
Optics & Laser Technology
DOI :
10.1016/j.optlastec.2019.105998
|
49. |
Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*
2020
Author(s) : Sulaiman Wadi Harun, Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus Source :
CHINESE PHYSICS LETTERS
|
50. |
Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
CRYSTENGCOMM
|
51. |
Growth of semi-polar (11(2)over-bar2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SHAT) method
2020
Source :
VACUUM
|
52. |
Crystal quality and surface structure tuning of semi-polar (11 22) GaN on m-plane sapphire via in-situ multiple ammonia treatment.
2020
Author(s) : Azzuliani Binti Supangat, Ahmad Shuhaimi Bin Abu Bakar Source :
Thin Solid Films
DOI :
10.1016/j.tsf.2020.137817
|
53. |
Crystal quality and surface structure tuning of semi-polar (11-22) GaN on m-plane sapphire via in-situ multiple ammonia treatment
2020
Source :
THIN SOLID FILMS
|
54. |
Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
|
55. |
Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser.
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Wan Haliza Binti Abd Majid Source :
Optical Fiber Technology
DOI :
10.1016/j.yofte.2019.102073
|
56. |
Alq3 saturable absorber for generating Q switched pulses in erbium doped fiber laser.
2020
Source :
Microwave and Optical Technology Letters
DOI :
10.1002/mop.32178
|
57. |
Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate.
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Materials Research Express
DOI :
10.1088/2053-1591/ab1dd4
|
58. |
In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow
2019
Source :
APPLIED SURFACE SCIENCE
|
59. |
In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow.
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
DOI :
10.1016/j.apsusc.2019.01.123
|
60. |
Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Crystal Growth & Design
DOI :
10.1021/acs.cgd.9b00206
|
61. |
Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) With Directly Deposited Silver Nanowires Intermediate Source Electrode
2019
Source :
Journal of Nanoscience and Nanotechnology Letters
DOI :
10.1016/j.cap.2018.08.007
|
62. |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Noor Azrina Binti Haji Talik Sisin Source :
CrystEngComm
DOI :
10.1039/c9ce00014c
|
63. |
Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Mohd.arif Bin Mohd. Sarjidan Source :
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
64. |
Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template
2019
Source :
CRYSTAL GROWTH DESIGN
|
65. |
Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
MATERIALS RESEARCH EXPRESS
|
66. |
Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
JOURNAL OF ELECTRONIC MATERIALS
|
67. |
Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Mohd Nazri Bin Abdul Rahman, Noor Azrina Binti Haji Talik Sisin Source :
JAPANESE JOURNAL OF APPLIED PHYSICS
|
68. |
Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Muhammad Imran Mustafa Bin Abdul Khudus, Noor Azrina Binti Haji Talik Sisin Source :
Japanese Journal of Applied Physics
DOI :
10.7567/1347-4065/ab09d3
|
69. |
Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
DOI :
10.1016/j.apsusc.2018.03.024
|
70. |
Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
DOI :
10.1016/j.spmi.2018.05.024
|
71. |
Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
DOI :
https://doi.org/10.1016/j.spmi.2018.03.038
|
72. |
Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
DOI :
10.1016/j.spmi.2018.04.040
|
73. |
Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
2018
Author(s) : Saadah Binti Abdul Rahman, Muhammad Imran Mustafa Bin Abdul Khudus, Ahmad Shuhaimi Bin Abu Bakar Source :
Thin Solid Films
DOI :
10.1016/j.tsf.2018.09.052
|
74. |
Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
2018
Source :
Materials Science in Semiconductor Processing
DOI :
10.1016/j.mssp.2018.06.014
|
75. |
Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
APPLIED SURFACE SCIENCE
|
76. |
Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
2018
Source :
SUPERLATTICES AND MICROSTRUCTURES
|
77. |
Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells.
2017
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Journal of Materials Science
DOI :
10.1007/s10853-017-1190-7
|
78. |
Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting.
2017
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Journal of Alloys and Compounds
DOI :
10.1016/j.jallcom.2017.02.231
|
79. |
Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties
2017
Author(s) : Mohd Rafie Bin Johan, Roslina Binti Ahmad, Tan Kim Han, Ahmad Shuhaimi Bin Abu Bakar, Hairul Anuar Bin Tajuddin Source :
Optik
|
80. |
Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
DOI :
http://dx.doi.org/10.1016/j.aps
|
81. |
First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential.
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Optik
|
82. |
High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Nur Awanis Binti Hashim, Mohd Faizul Bin Mohd Sabri, Suhana Binti Mohd Said Source :
Scientific Reports
|
83. |
Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
|
84. |
Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
JOURNAL OF ALLOYS AND COMPOUNDS
|
85. |
Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation
2015
Source :
Rsc Advances
|
86. |
Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration
2015
Author(s) : Mehran Sookhakian, Ahmad Shuhaimi Bin Abu Bakar Source :
Rsc Advances
|
87. |
Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
88. |
One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Rsc Advances
|
89. |
Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar, Mohd Faizul Bin Mohd Sabri Source :
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems
|
90. |
Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Ceramics International
|
91. |
Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Rsc Advances
|
92. |
Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Rsc Advances
|
93. |
Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN.
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
94. |
Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Journal of Applied Physics
|
95. |
Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
|
96. |
Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Ceramics International
|
97. |
Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Physics a-Materials Science Processing
|
98. |
Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Ceramics International
|
99. |
Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
|
100. |
Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
101. |
Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Materials Research
|
102. |
Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
|
103. |
Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Applied Surface Science
|
104. |
Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems
|
105. |
The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
106. |
The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
107. |
Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Journal of Applied Physics
|
108. |
Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
109. |
Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB
2014
Author(s) : Mehran Sookhakian, Ahmad Shuhaimi Bin Abu Bakar Source :
Ceramics International
|
110. |
A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
ADVANCED MATERIALS RESEARCH
|
111. |
Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor
2013
Author(s) : Mohd Faizul Bin Mohd Sabri, Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Material Research
|
112. |
Electrical and Optical Characterization of Mg
doping
in GaN
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Material Research
|
113. |
Investigation of the Geometry Modeling of Metal Organic
Halide Vapor Phase Epitaxy (MOHVPE) Reactor.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Material Research
|
114. |
InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under- layer.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices And Microstructures
|
115. |
Compositional and Structural Characterization of
Heterostructure
InGaN-based Light-Emitting Diode by High
Resolution X-
Ray Diffraction
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Materials Research
|
116. |
InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Superlattices and Microstructures
|
117. |
PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell
2012
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
118. |
PEDOT:PSS Thin Film as Transparent Electrode in
ITO-Free Organic Solar Cell.
2012
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Advanced Materials Research
|
119. |
InGaN-based blue LED grown on Si(111) substrate.
2011
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
IEEEXplore Conference Proceeding
|
120. |
Effect of AlGaN/GaN Strained-Layer Superlattices
Underlayer to InGaN-based Multi-Quantum Wells Grown on
Si(111) Substrate by MOCVD
2011
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
AIP Conf. Proc.
|
121. |
Effect of Al0.06Ga0.94N/GaN Strained-Layer
Superlattices Cladding Underlayer to InGaN-based Multi-
Quantum Well Grown on Si(111) Substrate with AlN/GaN
Intermediate Layer
2010
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Japanese Journal of Applied Physics
|
122. |
High performance InGaN LEDs on Si (1 1 1)
substrates grown by MOCVD
2010
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
123. |
Enhancement of InGaN-based MQW Grown on Si(111)
Substrate
by Underlying AlGaN/GaN SLS Cladding Layer
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source :
Mater. Res. Soc. Symp. Proc.
|
124. |
Growth of InGaN-based laser diode structure on silicon
(111) substrate
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
125. |
Characterization and Fabrication of InGaN-based
blue
LED with Underlying AlGaN/GaN SLS Cladding Layer
Grown
on Si(111) Substrate
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
RESEARCH PROJECT
GRANT | PROGRESS | STATUS |
---|---|---|
High Efficiency High Electron Mobility Transistor (hemt) For Power Electronics Modules
|
|
on going |
Vapor Phase Epitaxy (vpe) Technology Research For Gan-on-si High-elctron Mobility Transistor
|
|
end |
Nitride Epitaxial Semiconductor
|
|
end |
Indium Gallium Nitride (ingan) -based Blue/violet Led Grown On M-plane Gallium Nitride (gan) Substrate
Researcher(s) : Dr. Muhammad Imran Mustafa Bin Abdul Khudus, Associate Prof. Dr. Azzuliani Binti Supangat, Norzaini Binti Zainal |
|
end |
Growth and Properties of Semipolar (11-22) InGaN/GaN MQW-based LED Grown on m-plane (10-10) sapphire substrate by Metalorganic Chemical Vapor Deposition (MOCVD).
Researcher(s) : - |
|
end |
InGaN/GaN Light Emitting Diodes (LEDs) Growth on Nonpolar a-Plane (112 0) GaN on r-Plane Sapphire Substrate by MOCVD
Researcher(s) : - |
|
end |
Growth and properties of m-plane InGaN/GaN MQW based LED on m-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD).
Researcher(s) : - |
|
end |
Epitaxial growth of InxGa1-xN material for solar cells and water splitting applications using Metal Organic Chemical Vapor Deposition method
|
|
end |
Gallium Nitride On Gallium Nitride (gan-on-gan)
|
|
end |
Sputter Assisted Chemical Vapor Deposition (sa-cvd) For Growth Of Nitride Based Semiconductor Thin Films
|
|
end |
Growth Of Zinc Oxide-based Semiconductors By Vapor Phase Epitaxy Methods
Researcher(s) : -, -, -, - |
|
end |
Investigation Of Morphological Structural And Optical Properties Of Zno Nanostructures
Researcher(s) : - |
|
end |
RESEARCH COLLABORATOR
GRANT | PROGRESS | STATUS |
---|---|---|
Orqanicallv-bridqed Mosz Semiconductor Ont A 1d Nanorods Thin Film For Robust And Sustainable Photoelectrochemical Devices Application
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar |
|
end |
Gallium Nitride Epitaxy For Power And Optoelectronic Devices
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman, Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar, Associate Prof. Dr. Azzuliani Binti Supangat, Associate Prof. Dr. Goh Boon Tong, Prof. Dr. A.s. Md. Abdul Haseeb, Prof. Dr. Norhayati Binti Soin, Professor Ir. Dr. Wong Yew Hoong, Dr. Mohd Faiz Bin Mohd Salleh, Nafarizal Nayan, Hashim Saim, Mohd Zainizam Sahdan, Mohd Zamri Mohd Yusop, Mohamad Rusop Mahmood, Mohammad Hafiz Mamat, Prabakaran Poopalan, Mohamad Halim Abd. Wahid, Shamsul Amir Abdul Rais, Dr. Noor Azrina Binti Haji Talik Sisin |
|
end |
High-efficiency Ingan-based Green Led Grown On Patterned-sapphire Substrate
|
|
end |
Investigation on the Size and Coverage Density of Gold Nanocrystal on the Surface of Titanium Dioxide Nanorods Thin Film towards the Photoelectrochemical Water Splitting Performance
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar, Khiew Poi Sim |
|
end |
Fabrication Of Cost Effective Ag/mos2 Nanocomposite Photoelectrode For Photoelectrochemical Device In Producing Hydrogen Gas And Generating Photocurrent Simultaneously
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman, Dr. Zarina Binti Aspanut, Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar, Khiew Poi Sim, Shahidan Bin Radiman, Muhammad Azmi Abdul Hamid, Naziri Bin Ghazali |
|
end |
In-situ Templated Growth Of Nitride-based Compound Semiconductor Nanostructures
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar |
|
end |
Determination Of Free Carrier Density In Zno/mos2 Hybrid Nanostructures Thin Film By Using Electrochemical Impedance Spectroscopy
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman, Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar, Khiew Poi Sim, Shahidan Bin Radiman |
|
end |
Synthesis And Application Of Low Dimensional Materials.
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar |
|
end |
Nobel Laureate Profesor Shuji Nakamura (collaboration) & 'gan On Gan'- Grant Travel Student
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar |
|
end |
Inorganic Thin Films And Nanostructures For Energy, Environmental And Sustainable Development
|
|
end |
NANOSTRUCTURE EVOLUTION OF Zno THIN FILMS INCORPORATED WITH NANOROD LAYERS: THE AMELIORATION OF HIGHLY C-AXIS-ORIENTED FOR THE GROWTH OF DEFECT FREE FILM
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar, Mohamad Rusop Mahmood, Mohd Firdaus Malek |
|
end |