ARTICLE IN ACADEMIC JOURNALS
NO | DETAILS OF ARTICLE IN ACADEMIC JOURNALS |
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1. |
The effect of ammonia partial pressure on the growth of semipolar (11-22) InGaN/GaN MQWs and LED structures
2023
Source : MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS DOI : 10.1016/j.mseb.2023.116368 |
2. |
Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : SCIENTIFIC REPORTS DOI : 10.1038/s41598-023-35677-5 |
3. |
Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Scientific Reports DOI : 10.1038/s41598-023-35677-5 |
4. |
Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Surfaces and Interfaces DOI : 10.1016/j.surfin.2023.103041 |
5. |
Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : SURFACES AND INTERFACES DOI : 10.1016/j.surfin.2023.103041 |
6. |
Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films
2023
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : SCRIPTA MATERIALIA DOI : 10.1016/j.scriptamat.2022.115228 |
7. |
Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering
2022
Source : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI : 10.1007/s10854-022-08186-w |
8. |
Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11-22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)
2022
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Norhaniza Binti Rizuan,Wong Yew Hoong Source : PHOTONICS DOI : 10.3390/photonics9090646 |
9. |
Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112 over bar 2) GaN: Crystal Quality and Surface Morphology Study
2022
Source : CRYSTALS DOI : 10.3390/cryst12020247 |
10. |
Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
2022
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : INTERNATIONAL JOURNAL OF NANOTECHNOLOGY DOI : 10.1504/IJNT.2022.124519 |
11. |
Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review
2022
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : COATINGS DOI : 10.3390/coatings12020275 |
12. |
The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
2021
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Noor Azrina Binti Haji Talik Sisin Source : Journal of Materials Science: Materials in Electronics DOI : 10.1007/s10854-020-05070-3 |
13. |
The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
2021
Source : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI : 10.1016/j.mssp.2021.105836 |
14. |
Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma
2021
Source : MICROELECTRONICS INTERNATIONAL DOI : 10.1108/MI-02-2021-0015 |
15. |
Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : MICROELECTRONICS INTERNATIONAL DOI : 10.1108/MI-02-2021-0013 |
16. |
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : MICROELECTRONICS INTERNATIONAL DOI : 10.1108/MI-02-2021-0012 |
17. |
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
2021
Source : Applied Surface Science DOI : 10.1016/j.apsusc.2020.148406 |
18. |
The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
2021
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI : 10.1007/s10854-020-05070-3 |
19. |
Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Optical Materials Express DOI : 10.1364/OME.413417 |
20. |
The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
2021
Source : Materials Science in Semiconductor Processing DOI : 10.1016/j.mssp.2021.105836 |
21. |
Enhanced Indium Adsorption and Surface Evolution of Semi-Polar (11-22) LED via a Strain Periodic Alternating Superlattice (SPAS-L).
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Materials Today Communications DOI : 10.1016/j.mtcomm.2021.102441 |
22. |
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
2021
Author(s) : Wan Haliza Binti Abd Majid,Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar,Noor Azrina Binti Haji Talik Sisin Source : SCIENTIFIC REPORTS DOI : 10.1038/s41598-021-89201-8 |
23. |
Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector
2021
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar Source : MATERIALS LETTERS DOI : 10.1016/j.matlet.2020.129244 |
24. |
The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance.
2021
Source : Materials Science in Semiconductor Processing DOI : 10.1016/j.mssp.2020.105431 |
25. |
Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD
2021
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : JOURNAL OF ELECTRONIC MATERIALS DOI : 10.1007/s11664-021-08768-0 |
26. |
Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
2021
Source : OPTICAL MATERIALS EXPRESS DOI : 10.1364/OME.413417 |
27. |
Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
2021
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar Source : THIN SOLID FILMS DOI : 10.1016/j.tsf.2020.138489 |
28. |
Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
2021
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Noor Azrina Binti Haji Talik Sisin Source : APPLIED SURFACE SCIENCE DOI : 10.1016/j.apsusc.2020.148406 |
29. |
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN based UVC LED.
2021
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Microelectronics International |
30. |
The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance
2021
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI : 10.1016/j.mssp.2020.105431 |
31. |
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a‑plane GaN
2021
Source : Scientific Reports DOI : 10.1038/s41598-021-89201-8 |
32. |
Growth of semi-polar (11(2)over-bar2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SHAT) method
2020
Source : VACUUM |
33. |
Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : CRYSTENGCOMM |
34. |
Crystal quality and surface structure tuning of semi-polar (11 22) GaN on m-plane sapphire via in-situ multiple ammonia treatment.
2020
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar Source : Thin Solid Films DOI : 10.1016/j.tsf.2020.137817 |
35. |
Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method.
2020
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar Source : Vacuum DOI : 10.1016/j.vacuum.2020.109208 |
36. |
MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications
2020
Author(s) : Hamzah Bin Arof,Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : JOURNAL OF MODERN OPTICS |
37. |
Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : CHINESE PHYSICS LETTERS |
38. |
Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate.
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattice and Microstructures DOI : 10.1016/j.spmi.2020.106722 |
39. |
Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser.
2020
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : Optical Fiber Technology DOI : 10.1016/j.yofte.2019.102073 |
40. |
Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING |
41. |
Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Effariza Binti Hanafi,Muhammad Imran Mustafa Bin Abdul Khudus Source : OPTICS AND LASER TECHNOLOGY |
42. |
Alq(3) saturable absorber for generating Q-switched pulses in erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
43. |
Crystal quality and surface structure tuning of semi-polar (11-22) GaN on m-plane sapphire via in-situ multiple ammonia treatment
2020
Source : THIN SOLID FILMS |
44. |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
2020
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar,Noor Azrina Binti Haji Talik Sisin,Omar Ayad Fadhil Al-zuhairi Source : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING |
45. |
Indium tin oxide coated D-shape fiber as saturable absorber for passively Qswitched erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : Optics & Laser Technology DOI : 10.1016/j.optlastec.2019.105998 |
46. |
Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate
2020
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : SUPERLATTICES AND MICROSTRUCTURES DOI : 10.1016/j.spmi.2020.106722 |
47. |
Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD.
2020
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : CrystEngComm DOI : 10.1039/D0CE00113A |
48. |
Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Effariza Binti Hanafi,Muhammad Imran Mustafa Bin Abdul Khudus Source : OPTICAL FIBER TECHNOLOGY |
49. |
Electronic surface, optical and electrical properties of p GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED.
2020
Author(s) : Wan Haliza Binti Abd Majid,Ahmad Shuhaimi Bin Abu Bakar,Noor Azrina Binti Haji Talik Sisin Source : Materials Science in Semiconductor Processing DOI : 10.1016/j.mssp.2019.104757 |
50. |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
2020
Author(s) : Azzuliani Binti Supangat,Ahmad Shuhaimi Bin Abu Bakar,Noor Azrina Binti Haji Talik Sisin Source : Materials Science in Semiconductor Processing DOI : 10.1016/j.mssp.2019.104700 |
51. |
Alq3 saturable absorber for generating Q switched pulses in erbium doped fiber laser.
2020
Source : Microwave and Optical Technology Letters DOI : 10.1002/mop.32178 |
52. |
Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser
2020
Author(s) : Sulaiman Wadi Harun,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Mohd.arif Bin Mohd. Sarjidan Source : OPTICAL FIBER TECHNOLOGY |
53. |
Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template
2019
Source : CRYSTAL GROWTH DESIGN |
54. |
Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode
2019
Source : JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
55. |
Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Noor Azrina Binti Haji Talik Sisin Source : Japanese Journal of Applied Physics DOI : 10.7567/1347-4065/ab09d3 |
56. |
Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Crystal Growth & Design DOI : 10.1021/acs.cgd.9b00206 |
57. |
Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) With Directly Deposited Silver Nanowires Intermediate Source Electrode
2019
Source : Journal of Nanoscience and Nanotechnology Letters DOI : 10.1016/j.cap.2018.08.007 |
58. |
Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Noor Azrina Binti Haji Talik Sisin Source : CrystEngComm DOI : 10.1039/c9ce00014c |
59. |
Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus,Mohd Nazri Bin Abdul Rahman,Noor Azrina Binti Haji Talik Sisin Source : JAPANESE JOURNAL OF APPLIED PHYSICS |
60. |
In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow.
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science DOI : 10.1016/j.apsusc.2019.01.123 |
61. |
Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate.
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Materials Research Express DOI : 10.1088/2053-1591/ab1dd4 |
62. |
Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : MATERIALS RESEARCH EXPRESS |
63. |
In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow
2019
Source : APPLIED SURFACE SCIENCE |
64. |
Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template
2019
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : JOURNAL OF ELECTRONIC MATERIALS |
65. |
Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
2018
Source : Materials Science in Semiconductor Processing DOI : 10.1016/j.mssp.2018.06.014 |
66. |
Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures DOI : https://doi.org/10.1016/j.spmi.2018.03.038 |
67. |
Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
2018
Source : SUPERLATTICES AND MICROSTRUCTURES |
68. |
Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science DOI : 10.1016/j.apsusc.2018.03.024 |
69. |
Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures DOI : 10.1016/j.spmi.2018.04.040 |
70. |
Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD.
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures DOI : 10.1016/j.spmi.2018.05.024 |
71. |
Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si
2018
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : APPLIED SURFACE SCIENCE |
72. |
Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
2018
Author(s) : Saadah Binti Abdul Rahman,Ahmad Shuhaimi Bin Abu Bakar,Muhammad Imran Mustafa Bin Abdul Khudus Source : Thin Solid Films DOI : 10.1016/j.tsf.2018.09.052 |
73. |
Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells.
2017
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Journal of Materials Science DOI : 10.1007/s10853-017-1190-7 |
74. |
Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting.
2017
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Journal of Alloys and Compounds DOI : 10.1016/j.jallcom.2017.02.231 |
75. |
Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties
2017
Author(s) : Mohd Rafie Bin Johan,Roslina Binti Ahmad,Hairul Anuar Bin Tajuddin,Ahmad Shuhaimi Bin Abu Bakar,Tan Kim Han Source : Optik |
76. |
First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential.
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Optik |
77. |
Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science DOI : http://dx.doi.org/10.1016/j.aps |
78. |
Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
2016
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science |
79. |
High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane
2016
Author(s) : Suhana Binti Mohd Said,Mohd Faizul Bin Mohd Sabri,Nur Awanis Binti Hashim,Ahmad Shuhaimi Bin Abu Bakar Source : Scientific Reports |
80. |
Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber
2015
Source : Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems |
81. |
Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
82. |
Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN.
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
83. |
Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Mehran Sookhakian Source : Rsc Advances |
84. |
Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Rsc Advances |
85. |
Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : JOURNAL OF ALLOYS AND COMPOUNDS |
86. |
Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Rsc Advances |
87. |
Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Ceramics International |
88. |
Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation
2015
Source : Rsc Advances |
89. |
One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue
2015
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Rsc Advances |
90. |
Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Journal of Applied Physics |
91. |
Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems |
92. |
Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
93. |
Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science |
94. |
Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science |
95. |
Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Ceramics International |
96. |
Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science |
97. |
Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Physics a-Materials Science Processing |
98. |
Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Applied Surface Science |
99. |
Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
100. |
Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Advanced Materials Research |
101. |
Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Journal of Applied Physics |
102. |
The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
103. |
Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar,Mehran Sookhakian Source : Ceramics International |
104. |
The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
105. |
Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode.
2014
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Ceramics International |
106. |
Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor
2013
Source : Advanced Material Research |
107. |
Electrical and Optical Characterization of Mg
doping
in GaN
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Advanced Material Research |
108. |
Investigation of the Geometry Modeling of Metal Organic
Halide Vapor Phase Epitaxy (MOHVPE) Reactor.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Advanced Material Research |
109. |
InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices and Microstructures |
110. |
InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under- layer.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Superlattices And Microstructures |
111. |
Compositional and Structural Characterization of
Heterostructure
InGaN-based Light-Emitting Diode by High
Resolution X-
Ray Diffraction
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Advanced Materials Research |
112. |
A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device.
2013
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : ADVANCED MATERIALS RESEARCH |
113. |
PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell
2012
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
114. |
PEDOT:PSS Thin Film as Transparent Electrode in
ITO-Free Organic Solar Cell.
2012
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Advanced Materials Research |
115. |
Effect of AlGaN/GaN Strained-Layer Superlattices
Underlayer to InGaN-based Multi-Quantum Wells Grown on
Si(111) Substrate by MOCVD
2011
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : AIP Conf. Proc. |
116. |
InGaN-based blue LED grown on Si(111) substrate.
2011
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : IEEEXplore Conference Proceeding |
117. |
High performance InGaN LEDs on Si (1 1 1)
substrates grown by MOCVD
2010
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
118. |
Effect of Al0.06Ga0.94N/GaN Strained-Layer
Superlattices Cladding Underlayer to InGaN-based Multi-
Quantum Well Grown on Si(111) Substrate with AlN/GaN
Intermediate Layer
2010
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Japanese Journal of Applied Physics |
119. |
Characterization and Fabrication of InGaN-based
blue
LED with Underlying AlGaN/GaN SLS Cladding Layer
Grown
on Si(111) Substrate
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
120. |
Growth of InGaN-based laser diode structure on silicon
(111) substrate
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar |
121. |
Enhancement of InGaN-based MQW Grown on Si(111)
Substrate
by Underlying AlGaN/GaN SLS Cladding Layer
2009
Author(s) : Ahmad Shuhaimi Bin Abu Bakar Source : Mater. Res. Soc. Symp. Proc. |
RESEARCH PROJECT
GRANT | PROGRESS | STATUS |
---|---|---|
High Efficiency High Electron Mobility Transistor (hemt) For Power Electronics Modules
(MOSTI-Funding) |
|
on going |
Vapor Phase Epitaxy (vpe) Technology Research For Gan-on-si High-elctron Mobility Transistor
(Private Funding) |
|
end |
Nitride Epitaxial Semiconductor
(Private Funding) |
|
end |
Indium Gallium Nitride (ingan) -based Blue/violet Led Grown On M-plane Gallium Nitride (gan) Substrate
Researcher(s) : Dr. Muhammad Imran Mustafa Bin Abdul Khudus,Associate Prof. Dr. Azzuliani Binti Supangat,Norzaini Binti Zainal
(Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science)) |
|
end |
Growth and Properties of Semipolar (11-22) InGaN/GaN MQW-based LED Grown on m-plane (10-10) sapphire substrate by Metalorganic Chemical Vapor Deposition (MOCVD).
Researcher(s) : -
(Postgraduate Research Grant (PPP) - Research) |
|
end |
InGaN/GaN Light Emitting Diodes (LEDs) Growth on Nonpolar a-Plane (112 0) GaN on r-Plane Sapphire Substrate by MOCVD
Researcher(s) : -
(Postgraduate Research Grant (PPP) - Research) |
|
end |
Growth and properties of m-plane InGaN/GaN MQW based LED on m-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD).
Researcher(s) : -
(Postgraduate Research Grant (PPP) - Research) |
|
end |
Epitaxial growth of InxGa1-xN material for solar cells and water splitting applications using Metal Organic Chemical Vapor Deposition method
(Geran Penyelidikan Universiti Malaya (UMRG) - AFR (Frontier Science)) |
|
end |
Gallium Nitride On Gallium Nitride (gan-on-gan)
(Private Funding) |
|
end |
Sputter Assisted Chemical Vapor Deposition (sa-cvd) For Growth Of Nitride Based Semiconductor Thin Films
(Fundamental Research Grant Scheme (FRGS)) |
|
end |
Growth Of Zinc Oxide-based Semiconductors By Vapor Phase Epitaxy Methods
Researcher(s) : ----
(Postgraduate Research Grant (PPP) - Research) |
|
end |
Investigation Of Morphological Structural And Optical Properties Of Zno Nanostructures
Researcher(s) : -
(Postgraduate Research Grant (PPP) - Research) |
|
end |
RESEARCH COLLABORATOR
GRANT | PROGRESS | STATUS |
---|---|---|
Orqanicallv-bridqed Mosz Semiconductor Ont A 1d Nanorods Thin Film For Robust And Sustainable Photoelectrochemical Devices Application
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar
(RU Geran - Fakulti Program) |
|
end |
Gallium Nitride Epitaxy For Power And Optoelectronic Devices
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman,Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Associate Prof. Dr. Azzuliani Binti Supangat,Associate Prof. Dr. Goh Boon Tong,Prof. Dr. A.s. Md. Abdul Haseeb,Prof. Dr. Norhayati Binti Soin,Associate Prof. Ir. Dr. Wong Yew Hoong,Dr. Mohd Faiz Bin Mohd Salleh,Nafarizal Nayan,Hashim Saim,Mohd Zainizam Sahdan,Mohd Zamri Mohd Yusop,Mohamad Rusop Mahmood,Mohammad Hafiz Mamat,Prabakaran Poopalan,Mohamad Halim Abd. Wahid,Shamsul Amir Abdul Rais,Dr. Noor Azrina Binti Haji Talik Sisin
(Long Term Research Grant Scheme (LRGS)) |
|
end |
High-efficiency Ingan-based Green Led Grown On Patterned-sapphire Substrate
Researcher(s) : Dr. Muhammad Imran Mustafa Bin Abdul Khudus,Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar
(Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science)) |
|
end |
Investigation on the Size and Coverage Density of Gold Nanocrystal on the Surface of Titanium Dioxide Nanorods Thin Film towards the Photoelectrochemical Water Splitting Performance
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Khiew Poi Sim
(Geran Penyelidikan Universiti Malaya (UMRG) - AFR (Frontier Science)) |
|
end |
Fabrication Of Cost Effective Ag/mos2 Nanocomposite Photoelectrode For Photoelectrochemical Device In Producing Hydrogen Gas And Generating Photocurrent Simultaneously
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman,Dr. Zarina Binti Aspanut,Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Khiew Poi Sim,Shahidan Bin Radiman,Muhammad Azmi Abdul Hamid,Naziri Bin Ghazali
(Prototype Research Grant Scheme (PRGS)) |
|
end |
In-situ Templated Growth Of Nitride-based Compound Semiconductor Nanostructures
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar
(Fundamental Research Grant Scheme (FRGS)) |
|
end |
Determination Of Free Carrier Density In Zno/mos2 Hybrid Nanostructures Thin Film By Using Electrochemical Impedance Spectroscopy
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman,Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Khiew Poi Sim,Shahidan Bin Radiman
(Fundamental Research Grant Scheme (FRGS)) |
|
end |
Synthesis And Application Of Low Dimensional Materials.
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar
(High Impact Research - Ministry of Education (HIR-MOE) Cycle 1) |
|
end |
Nobel Laureate Profesor Shuji Nakamura (collaboration) & 'gan On Gan'- Grant Travel Student
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar
(RU Geran) |
|
end |
Inorganic Thin Films And Nanostructures For Energy, Environmental And Sustainable Development
Researcher(s) : Datin Prof. Dr. Saadah Binti Abdul Rahman,Associate Prof. Dr. Siti Meriam Binti Ab. Gani,Dr. Zarina Binti Aspanut,Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Associate Prof. Dr. Goh Boon Tong,Dr. Richard Anak Ritikos
(Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science)) |
|
end |
NANOSTRUCTURE EVOLUTION OF Zno THIN FILMS INCORPORATED WITH NANOROD LAYERS: THE AMELIORATION OF HIGHLY C-AXIS-ORIENTED FOR THE GROWTH OF DEFECT FREE FILM
Researcher(s) : Associate Prof. Dr. Ahmad Shuhaimi Bin Abu Bakar,Mohamad Rusop Mahmood,Mohd Firdaus Malek
(Program Rakan Penyelidikan - RACE) |
|
end |