ASSOCIATE PROF. DR. AHMAD SHUHAIMI BIN ABU BAKAR
Department of Physics
Faculty of Science
shuhaimium.edu.myView CV | |
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Biography | |
Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya. He currently leads Nitride Semiconductor Laboratory which houses full spectrum of capabilities for epitaxy, fabrication and analysis of nitride-based optoelectronics and power devices, including Taiyo Nippon Sanso Corporation's SR2000 and SR5000 MOCVDs, PE-ALD, ICP, Metallization, Photolithography, HR-XRD, AFM, etc. He obtained many research grants provided by Ministry of Higher Education, CREST, etc as well as donation from local industries. His group is in active collaboration with several semiconductor manufacturers and other research institutes/laboratories in Malaysia and overseas. His group interest is epitaxy of polar and non-polar GaN on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices. |
Publication
Finance
Project Title | Progress | Status |
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High Efficiency High Electron Mobility Transistor (hemt) For Power Electronics Modules |
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on going |
Vapor Phase Epitaxy (vpe) Technology Research For Gan-on-si High-elctron Mobility Transistor |
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This information is generated from Research Grant Management System |
Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate
Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal-Organic Chemical Vapour Deposition
The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11-22) InGaN/GaN Light Emitting Diode
Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride (100) thin film growth using ceramic target