PERSONAL DETAIL


ASSOCIATE PROF. DR. AHMAD SHUHAIMI BIN ABU BAKAR

Associate Professor
Department of Physics
Faculty of Science
 
  +603-79674206
  +603-79674146
  shuhaimi@um.edu.my
 Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, W.Persekutuan Kuala Lumpur, Malaysia
 
Homepage
  http://www.nitride.org.my
Publons Link
  https://publons.com/researcher/F-1218-2010/
Scopus ID Link
  http://www.scopus.com/authid/detail.url?authorId=56544752400

BIOGRAPHY


Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya. He currently leads Nitride Semiconductor Laboratory which houses full spectrum of capabilities for epitaxy, fabrication and analysis of nitride-based optoelectronics and power devices, including Taiyo Nippon Sanso Corporation's SR2000 and SR5000 MOCVDs, PE-ALD, ICP, Metallization, Photolithography, HR-XRD, AFM, etc. He obtained many research grants provided by Ministry of Higher Education, CREST, etc as well as donation from local industries. His group is in active collaboration with several semiconductor manufacturers and other research institutes/laboratories in Malaysia and overseas. His group interest is epitaxy of polar and non-polar GaN on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.


ACADEMIC QUALIFICATION
(Qualification), (Institution).



PROFESSIONAL
(Organisation), (Role), (Year), (Level).


  • Institute of Electrical and Electronics Engineers (IEEE), Member, 2011 to 2020, (International)

ADMINISTRATIVE DUTIES
(Role), (Level), (Start date),(End Date).


  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member), University Malaya, 15/07/2019 to 14/07/2021
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya , Faculty, 14/03/2019 to 13/03/2020
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya, Faculty, 20/04/2017 to 31/12/2018 (Pegawai Penghubung Industri (ILO) Fakulti Sains Universiti Malaya)
  • CREST GaN-on-GaN Oversight Committee Member, National, 22/01/2015 to 31/12/2020 (CREST GaN-on-GaN Epitaxy Program Oversight Committee)
  • Penyelaras Seminar Pascasiswazah (Candidature Defense) untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya., Faculty, 27/08/2013 to 31/12/2013
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2013/2014, Faculty, 05/11/2012 to 04/11/2013
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "Cadangan Mengubahsuai dan Menaiktaraf Bangunan AMCAL Termasuk Kerja-Kerja Sivil, Mekanikal dan Elektrikal untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya"., University Malaya, 15/08/2012 to 21/01/2013
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "To Supply, Deliver, Install and Commission of Spare Parts, Maintenance and Consumables for Hydrogen Refueling System" untuk Projek Penyelidikan HIR-MOHE, Fakulti Kejuruteraan, Universiti Malaya., University Malaya, 06/08/2012 to 31/12/2012
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2012/2013, Faculty, 09/02/2012 to 31/12/2013
  • Coordinator for Post-Graduate Candidature Defence of Physics Department, Faculty, 02/05/2011
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2011/2012, Faculty, 28/02/2011

AREAS OF EXPERTISE
(Area).


  • Semiconductor Materials (Gallium Nitride, GaN, Indium Gallium Nitride, InGaN, Aluminum Gallium Nitride, AlGaN, Light Emitting Diode, LED, Laser Diode, LD, Multi-Quantum Well, MQW, Strained-Layer Superlattices, SLS)


RECENT SELECTED PUBLICATIONS
(Publication).


Article in Academic Journals

2021
  • Adreen Azman, Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Wan Haliza Abd Majid. (2021). The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, Volume 131, 15 August 2021, 105836. (ISI-Indexed)
  • Norhilmi Zahir, Noor Azrina Talik, Hazmi Naim Harun, Anas Kamarundzaman, Sarayut Tunmee, Hideki Nakajima, Narong Chanlek, Ahmad Shuhaimi, Wan Haliza Abd Majid (2021). Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, Volume 540, Part 2, 28 February 2021, 148406. (ISI-Indexed)
  • Hussin, Hayatun Najihah, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Mahat, Mohd Raqif, Poopalan, Prabakaran, Shuhaimi, Ahmad, Abd Majid, Wan Haliza. (2020). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, January 2021, 121. (ISI-Indexed)
  • Shamsul Amir Abdul Rais, Zainuriah Hassan, Ahmad Shuhaimi Abu Bakar, Mohd Nazri Abd Rahman, Yusnizam Yusuf, Muhamad Ikram Md Taib, Abdullah Fadil Sulaiman, Hayatun Najiha Hussin, Mohd Fairus Ahmad, Mohd Natashah Norizan, Keiji Nagai, Yuka Akimoto, and Dai Shoji (2021). Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express 11(3):926 (ISI-Indexed)
  • Mohd Nazri Abd Rahman, Ahmad Shuhaimi, Ooi Chong Seng, Gary Tan, Afiq Anuar, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Narong Chanlek & Wan Haliza Abd Majid. (2021). The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. J Mater Sci: Mater Electron (2021). https://doi.org/10.1007/s10854-020-05070-3 (ISI-Indexed)

2020
  • Mohamad Raqif Mahat, Noor AzrinaTalik, Mohd Nazri Abd Rahman, Mohd Afiq Anuar, Kamarul Allif, Adreen Azman, Hideki Nakajima, Ahmad Shuhaimi, Wan Haliza Abd Majid. 2020. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, Volume 106, 104757 (2020). (ISI-Indexed)
  • Afiq Anuar, Abdullah Haaziq, Ahmad Makinudin, Omar Al-Zuhairi, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films 697, 137817 (2020). (ISI-Indexed)
  • F.S.M. Samsamnun, N.F. Zulkipli, M.A.M. Sarjidan, S.W. Harun, W.H.A. Majid, M.I.M.A. Khudus, A. Shuhaimi, A.H.A. Rosol, M.F.M. Rusdi, A.A.A. Jafry, M. Yasin. (2019) Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 102073 (2020). (ISI-Indexed)
  • Anas Kamarudzaman, Ahmad Shuhaimi Bin Abu Bakar, Adreen Azman, Al-Zuhairi Omar, AzzulianiSupangat, Noor AzrinaTalik. (2020). Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, Volume 105, January 2020, 104700. (ISI-Indexed)
  • N. Zainal, M.E.A.Samsudin, M. Ikram Md Taib, M.A.Ahmad, A. Shuhaimi (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures 148, 106722 (2020). (ISI-Indexed)
  • B. Nizamani, A.A.A. Jafry, M.I.M. Abdul Khudus, F.A. Memon, A. Shuhaimi, N. Kasim, E. Hanafi, M. Yasin, S.W. Harun. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q switched erbium-doped fiber laser. Optics & Laser Technology, 124, 105998 (2020). (ISI-Indexed)
  • Mohd Nazri Abd Rahman, Yusnizam Yusuf, Afiq Anuar, Mohamad Raqif Mahat, Narong Chanlek, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Norzaini Zainal, Wan Haliza Abd Majid and Ahmad Shuhaimi. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 2020, Advance Article (ISI-Indexed)
  • Farina S. M. Samsamnun, Nur F. Zulkipli, Muhammad I. M. A. Khudus, Ahmad Shuhaimi, Wan H. A. Majid, Sulaiman W. Harun. 2019. Alq3 saturable absorber for generating Q‐switched pulses in erbium‐doped fiber laser. Microwave and Optical Technology Letters, Early View. (ISI-Indexed)
  • Afiq Anuar, Abdullah Haaziq Ahmad Makinudin, Omar Al-Zuhairi, Narong Chanlek, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method. Vacuum 174, 109208 (2020). (ISI-Indexed)

2019
  • Abdullah Haaziq Ahmad Makinudin, Al-Zuhairi Omar, Afiq Anuar, Ahmad Shuhaimi Abu Bakar, Steven P. DenBaars, Azzuliani Supangat. 2019. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template, Crystal Growth & Design 19, 6092-6099 (2019). (ISI-Indexed)
  • M Ikram Md Taib, M E A Samsudin, E A Alias, S N Waheeda, N Ibrahim, A Shuhaimi and N Zainal. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, Volume 6, Number 8. (ISI-Indexed)
  • Mohd Arif Mohd Sarjidan, Ahmad Shuhaimi, Wan Haliza Abd. Majid (2019). Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) With Directly Deposited Silver Nanowires Intermediate Source Electrode. Journal of Nanoscience and Nanotechnology, 19, 6995–7003 (ISI-Indexed)
  • Rahman, M. N. A., Sulaiman, A. F., Khudus, M. I. A., Allif, K., Talik, N. A., Basri, S. H., & Shuhaimi, A. (2019). Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58(SC), SC1037. (ISI-Indexed)
  • S. Najwa, A. Shuhaimi, N.A. Talik, N. Ameera, M. Sobri & M.Rusop (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science 479, 1220-1225. (ISI-Indexed)
  • Rahman, M. N. A., Talik, N. A., Khudus, M. I. A., Sulaiman, A. F., Allif, K., Zahir, N. M., & Shuhaimi, A. (2019). Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm. (ISI-Indexed)

2018
  • Al-Zuhairi Omar, Ahmad Shuhaimi, Abdullah Haaziq Ahmad Makinudin, Muhammad I.M. Abdul Khudus, Azzuliani Supangat. (2018). Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing 86, 1 November 2018, Pages 1–7. (ISI-Indexed)
  • P.C. Sivanathan, Ahmad Shuhaimi, Hebal Hamza,Stacy J. Kowsz, Muhammad I.M. Abdul Khudus, Hongjian Li, Kamarul Allif. 2018. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD. Superlattices and Microstructures, In Press, Accepted. (ISI-Indexed)
  • Ahmad Hadi Ali, Zainuriah Hassan, Ahmad Shuhaimi. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, Volume 443, Pages 544-547. (ISI-Indexed)
  • Mohd Nazri Abd. Rahman, Ahmad Shuhaimi, Yusnizam Yusuf, Hongjian Li, Abdullah Fadil Sulaiman, Muhammad Esmed Alif Samsudin, Norzaini Zainal, Muhammad I.M. Abdul Khudus. 2018. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures 120, 319-326. (ISI-Indexed)
  • Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman & AzzulianiSupangat. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, Volume 117, Pages 207-214. (ISI-Indexed)
  • Adreen Azman, Ahmad Shuhaimi, Al-Zuhairi Omar, Anas Kamarundzaman, Muhammad Imran Mustafa Abdul Khudus, Azharul Ariff, M.E.A. Samsudin, Norzaini Zainal, Saadah Abd Rahman. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, in-press. (ISI-Indexed)

2017
  • K H Tan, H A Tajuddin, R A Ahmad, A Suhaimy, M R Johan , Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties, Optik (ISI-Indexed)
  • Hasan, S.W., Said, S.M., Bakar, A.S.B.A. et al. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells. Journal of Materials Science, (2017), pp 1-11. (ISI-Indexed)
  • Ganesh, V., Alizadeh, M., Shuhaimi, A., Adreen, A., Pandikumar, A., Jayakumar, M., Huang, N.M., Ramesh, R., Baskar, K., and Rahman S.A. (2017). Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. Journal of Alloys and Compounds 706 (2017) 629-636. (ISI-Indexed)

2016
  • Amina Benzina, Abdelhadi Lachebi, Ahmad Shuhaimi, Saadah Abdul Rahman, Hamza Abid. 2016. First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential. Optik. In Press, Accepted Manuscript. (ISI-Indexed)
  • Hasan, S. W., Said, S. M., Sabri, M. F. M., Bakar, A. S. A., Hashim, N. A., Hasnan, M. M. I. M., Pringle, J. M. & MacFarlane, D. R. (2016). High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane. Scientific reports, 6(29328), 1-11. (ISI-Indexed)
  • Rahman, M. N. A., Yusuf, Y., Mansor, M., Shuhaimi, A. 2016. Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD Applied Surface Science. (Tier 1, Impact Factor = 3.150) (ISI-Indexed)

2015
  • M. Alizadeh, V. Ganesh, H. Mehdipour, N.F.F Nazarudin, B.T. Goh, A. Shuhaimi, S.A. Rahman. 2015. Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation. Journal of Alloys and Compounds 632 (2015) 741-747. (ISI-Indexed)
  • Majid Azarang, Ahmad Shuhaimi & Mehran Sookhakian. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration. RSC Advances. Accepted. (ISI-Indexed)
  • E. Azimah, N. Zainal, A. Shuhaimi & Z. Hassan. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. Superlattices and Microstructures 82 (2015) 592-598. (ISI-Indexed)
  • Annuar NZM, Sabri MFM & Bakar ASA. 2014. Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber. Microsyst Technol, 21(1), 309-318 (2015) (ISI-Indexed)
  • Vattikondala Ganesh, Mahdi Alizadeh, Ahamad Shuhaimi, Alagarsamy Pandikumar, Boon Tong Goh, Nay Ming Huang, and Saadah Abdul Rahman. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation. RSC Advances 5: 17325-17335. (ISI-Indexed)
  • Ganesh, V., Alizadeh, M., Shuhaimi, A., Pandikumar, A., Goh, B. T., Huang, N. M., Rahman, S. A. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation Rsc Advances. (Tier 1, Impact Factor = 3.840) (ISI-Indexed)
  • Ameera, N., Shuhaimi, A., Surani, N., Rusop, M., Hakim, M., Mamat, M. H., Mansor, M., Sobri, M., Ganesh, V., Yusuf, Y. 2015. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode Ceramics International. (Tier 1, Impact Factor = 2.605) (ISI-Indexed)
  • Azarang, M., Shuhaimi, A., Sookhakian, M. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration Rsc Advances. (Tier 1, Impact Factor = 3.840) (ISI-Indexed)
  • Azimah, E., Zainal, N., Shuhaimi, A., Hassan, Z. 2015. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN Superlattices and Microstructures. (Tier 2, Impact Factor = 2.097) (ISI-Indexed)
  • Azarang, M., Shuhaimi, A., Yousefi, R., Jahromi, S. P. 2015. One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue Rsc Advances. (Tier 1, Impact Factor = 3.840) (ISI-Indexed)

2014
  • M. Alizadeh, H. Mehdipour, V. Ganesh, A. N. Ameera, B. T. Goh, A. Shuhaimi, S. A. Rahman. 2014. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films. Applied Physics A: Materials Science & Processing s00339-014-8649-z (2014). (ISI-Indexed)
  • Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar & Zainuriah Hassan. 2014. Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science 315 (2014) 387-391. (ISI-Indexed)
  • N. Ameera, A. Shuhaimi, S. Najwa, M. Rusop, K.M. Hakim, M.H. Mamat, M. Mazwan, M. Sobri, V. Ganesh & Y. Yusnizam. 2014. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode. Ceramics International. Accepted (2014). (ISI-Indexed)
  • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, A. Moradi Golsheikh, M. Sookhakian. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB. Ceramics International 40 (2014) 10217-10221. (ISI-Indexed)
  • S. Najwa, A. Shuhaimi, N. Ameera, K. M. Hakim, M. Sobri, M. Mazwan, M. H. Mamat, Y. Yusnizam, V. Ganesh & M. Rusop. 2014. The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering. Superlattices and Microstructures 72 (2014) 140-147. (ISI-Indexed)
  • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M. Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014). (ISI-Indexed)
  • S. NAJWA, A. SHUHAIMI, N. AMEERA, K. M. HAKIM, M. SOBRI, M. MAZWAN, M. Z. MUSA, M. H. MAMAT & M. RUSOP. 2014. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering. Advanced Materials Research 895: 12-16. (ISI/SCOPUS Indexed Publication)
  • N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, A. Shuhaimi Abu Bakar. 2014. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber. Microsystem Technologies 20. (ISI-Indexed)
  • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014). (ISI-Indexed)
  • M. Sobri, A. Shuhaimi, K.M. Hakim, V. Ganesh, M.H. Mamat, M. Mazwan, S. Najwa, N. Ameera, Y. Yusnizam & M. Rusop. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering. Superlattices and Microstructures 70: 82-90. (ISI-Indexed)
  • Ahmad Hadi Ali, Ahmad Shuhaimi & Zainuriah Hassan. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes. Applied Surface Science 288: 599-603. (ISI/SCOPUS Indexed Publication)
  • Sobri, M., Shuhaimi, A., Hakim, K. M., Ganesh, V., Mamat, M. H., Mazwan, M., Najwa, S., Ameera, N., Yusnizam, Y., Rusop, M. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979) (ISI-Indexed)
  • Ali, A. H., Abu Bakar, A. S., Hassan, Z. 2014. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer Applied Surface Science. (Tier 1, Impact Factor = 2.538) (ISI-Indexed)
  • Ali, A. H., Shuhaimi, A., Hassan, Z. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes Applied Surface Science. (Tier 1, Impact Factor = 2.538) (ISI-Indexed)
  • Azarang, M., Shuhaimi, A., Yousefi, R., Golsheikh, A. M., Sookhakian, M. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB Ceramics International. (Tier 1, Impact Factor = 2.086) (ISI-Indexed)
  • Najwa, S., Shuhaimi, A., Ameera, N., Hakim, K. M., Sobri, M., Mazwan, M., Mamat, M. H., Yusnizam, Y., Ganesh, V., Rusop, M. 2014. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979) (ISI-Indexed)

2013
  • N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, & A. Shuhaimi Abu Bakar. 2013. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor. Advanced Materials Research 626: 396-400. (ISI-Indexed)
  • Ahmad Hadi Ali, Ahmad Shuhaimi, Zainuriah Hassan & Yushamdan Yusof. 2013. Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x- ray diffraction. Advanced Materials Research 620: 22- 27. (ISI-Indexed)
  • E. Azimah, N. Zainal, Z. Hassan, A. Shuhaimi & Azlan Bahrin. 2013. Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research 620: 453-457. (ISI-Indexed)
  • Zurianti A. Rahman, Khaulah Sulaiman, Mohamad Rusop & Ahmad Shuhaimi. 2013. A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device. Advanced Materials Research 667: 165-171. (ISI-Indexed)
  • Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar, Takashi Egawa & Zainuriah Hassan. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer. Superlattices and Microstructures 60: 201�207. (ISI-Indexed)
  • NZM Annuar, MFM Sabri. ASA Bakar, Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor, Advanced Material Research, vol. 626 (2013), 396-400 (ISI-Indexed)
  • Ali, A. H., Abu Bakar, A. S., Egawa, T., Hassan, Z. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer Superlattices and Microstructures. (Tier 2, Impact Factor = 1.564) (ISI-Indexed)

2012
  • Zurianti A. Rahman, Khaulah Sulaiman, Ahmad Shuhaimi, Mohamad Rusop. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell. Advanced Materials Research 501: 252-256. (ISI-Indexed)
  • Rahman, Z. A., Sulaiman, K., Shuhaimi, A., Rusop, M. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell  (ISI-Indexed)

2011
  • Shuhaimi, A. & Egawa, T. 2011. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD. AIP Conf. Proc. 1328: 232-234. (ISI-Indexed)
  • Shuhaimi, A., Hassan, Z. & Egawa, T. 2011. InGaN-based blue LED grown on Si(111) substrate. IEEE RSM2011 Proc. 6088279:6-8. (ISI-Indexed)

2010
  • Bin Abu Bakar Ahmad Shuhaimi, Arata Watanabe, and Takashi Egawa, Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-based Multi- Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer, Jpn. J. Appl. Phys. 49 (2010) 021002. (ISI-Indexed)
  • Takashi Egawa and Bin Abu Bakar Ahmad Shuhaimi, High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD, J. Phys. D: Appl. Phys. 43, 354008 (2010). (ISI-Indexed)

2009
  • Bin Abu Bakar Ahmad Shuhaimi, Takaaki Suzue, Yukiyasu Nomura, Yoshinori Maki and Takashi Egawa, Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer, Mater. Res. Soc. Symp. Proc. 1167 (2009) O02-05. (ISI-Indexed)
  • Bin Abu Bakar Ahmad Shuhaimi, Pum Chian Khai, Takaaki Suzue, Yukiyasu Nomura and Takashi Egawa, Characterization and Fabrication of InGaN-based blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate, Mater. Res. Soc. Symp. Proc. 1167 (2009) O04-01. (ISI-Indexed)
  • Bin Abu Bakar Ahmad Shuhaimi , Hiroyuki Kawato, Youhua Zhu and Takashi Egawa, Growth of InGaN-based laser diode structure on silicon (111) substrate, Journal of Physics: Conference Series 152 (2009) 012007. (ISI-Indexed)

AREAS OF RESEARCH
(Project title), (Role), (From)-(Until), (Level), (Source).


  • Vapor Phase Epitaxy (vpe) Technology Research For Gan-on-si High-elctron Mobility Transistor, PI, 2018 - 2021, Private Funding, (National)
  • High-efficiency Ingan-based Green Led Grown On Patterned-sapphire Substrate, Co-Researcher, 2018 - 2020, Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science), (University)
  • Indium Gallium Nitride (ingan) -based Blue/violet Led Grown On M-plane Gallium Nitride (gan) Substrate, PI, 2018 - 2020, Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science), (University)
  • Orqanicallv-bridqed Mosz Semiconductor Ont A 1d Nanorods Thin Film For Robust And Sustainable Photoelectrochemical Devices Application, Co-Researcher, 2018 - 2021, RU Geran - Fakulti Program, (National)
  • Nitride Epitaxial Semiconductor, PI, 2017 - 2020, Private Funding, (National)
  • Gallium Nitride Epitaxy For Power And Optoelectronic Devices, Co-Researcher, 2017 - 2021, Long Term Research Grant Scheme (LRGS), (National)
  • Investigation on the Size and Coverage Density of Gold Nanocrystal on the Surface of Titanium Dioxide Nanorods Thin Film towards the Photoelectrochemical Water Splitting Performance, Co-Researcher, 2017 - 2019, Geran Penyelidikan Universiti Malaya (UMRG) - AFR (Frontier Science), (University)
  • Fabrication Of Cost Effective Ag/mos2 Nanocomposite Photoelectrode For Photoelectrochemical Device In Producing Hydrogen Gas And Generating Photocurrent Simultaneously, Co-Researcher, 2016 - 2019, Prototype Research Grant Scheme (PRGS), (National)
  • Determination Of Free Carrier Density In Zno/mos2 Hybrid Nanostructures Thin Film By Using Electrochemical Impedance Spectroscopy, Co-Researcher, 2016 - 2019, Fundamental Research Grant Scheme (FRGS), (National)
  • Growth and Properties of Semipolar (11-22) InGaN/GaN MQW-based LED Grown on m-plane (10-10) sapphire substrate by Metalorganic Chemical Vapor Deposition (MOCVD)., PI, 2016 - 2019, Postgraduate Research Grant (PPP) - Research, (National)
  • InGaN/GaN Light Emitting Diodes (LEDs) Growth on Nonpolar a-Plane (112 0) GaN on r-Plane Sapphire Substrate by MOCVD, PI, 2016 - 2019, Postgraduate Research Grant (PPP) - Research, (National)
  • Growth and properties of m-plane InGaN/GaN MQW based LED on m-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD)., PI, 2016 - 2019, Postgraduate Research Grant (PPP) - Research, (National)
  • Gallium Nitride On Gallium Nitride (gan-on-gan), PI, 2015 - 2016, Private Funding, (National)
  • Epitaxial growth of InxGa1-xN material for solar cells and water splitting applications using Metal Organic Chemical Vapor Deposition method, PI, 2015 - 2017, Geran Penyelidikan Universiti Malaya (UMRG) - AFR (Frontier Science), (University)
  • In-situ Templated Growth Of Nitride-based Compound Semiconductor Nanostructures, Co-Researcher, 2015 - 2019, Fundamental Research Grant Scheme (FRGS), (National)
  • Nobel Laureate Profesor Shuji Nakamura (collaboration) & 'gan On Gan'- Grant Travel Student, Co-Researcher, 2015 - 2016, RU Geran, (National)
  • Nanostructure Evolution of ZnO Thin Films Incorporated with Nanorod Layers: The Amelioration of Highly c-Axis Oriented for the Growth of Defect Free Film, Co-Investigator, 2014 - 2016, RACE Grant, (National)
  • NANOSTRUCTURE EVOLUTION OF Zno THIN FILMS INCORPORATED WITH NANOROD LAYERS: THE AMELIORATION OF HIGHLY C-AXIS-ORIENTED FOR THE GROWTH OF DEFECT FREE FILM, Co-Researcher, 2014 - 2016, Program Rakan Penyelidikan - RACE, (National)
  • Sputter Assisted Chemical Vapor Deposition (sa-cvd) For Growth Of Nitride Based Semiconductor Thin Films, PI, 2013 - 2016, Fundamental Research Grant Scheme (FRGS), (National)
  • Investigation Of Morphological Structural And Optical Properties Of Zno Nanostructures, PI, 2013 - 2015, Postgraduate Research Grant (PPP) - Research, (National)
  • Inorganic Thin Films And Nanostructures For Energy, Environmental And Sustainable Development, Co-Researcher, 2013 - 2016, Geran Penyelidikan Universiti Malaya (UMRG Programme) - AFR (Frontier Science), (University)
  • Growth Of Zinc Oxide-based Semiconductors By Vapor Phase Epitaxy Methods, PI, 2013 - 2016, Postgraduate Research Grant (PPP) - Research, (National)
  • Producing high quality cubic GaN using porous GaAs substrate for high efficient devices., Co-Investigator, 2013 - 2015, Exploratory Research Grant Scheme (ERGS), (National)
  • Investigation of Morphological Structural and Optical Properties of ZnO nanostructures, Coordinator, 2013 - 2015, Postgraduate Research Grant(PPP), (National)
  • Probing Nano and Electronics Structures of Low Dimensional Semiconducting Materials, Co-Investigator, 2012 - 2012, Geran Penyelidikan Universiti Malaya (UMRG), (National)
  • Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices, Co-Investigator, 2012 - 2014, Geran Universiti Penyelidikan (RU) Universiti Sains Malaysia (USM), (National)
  • Development of AlGaN/GaN strained-layer superlattice stack structure for high energy-efficient and cost-effective lnGaN based LEDs, Co-Investigator, 2012 - 2014, APEX Delivering Excellence Grant (DE2012), (National)
  • Synthesis And Application Of Low Dimensional Materials., Co-Researcher, 2011 - 2016, High Impact Research - Ministry of Education (HIR-MOE) Cycle 1, (National)
  • Optical Study on III-Nitride Semiconductor Materials and Its Devices, Co-Investigator, 2011 - 2013, Geran Penyelidikan Jangka Pendek Universiti Sains Malaysia (USM), (National)
  • Development of Metal-Organic Halide Vapor Phase Epitaxy (MOHVPE) for Growth of Galium Nitride (GaN), Principal Investigator(PI), 2011 - 2014, Geran Penyelidikan Universiti Malaya (UMRG), (National)
  • Synthesis and Application of Low Dimensional Materials, Co-Investigator, 2011 - 2015, MOHE, (National)
  • Investigation on Vapor Phase Epitaxy Processes for Growth of Nitride-based Wide Bandgap Semiconductor Thin-Films, Principal Investigator(PI), 2011 - 2013, Exploratory Research Grant Scheme (ERGS), (National)

CONSULTATION PROJECT/CONSULTANCY
(Project title), (Role), (From)-(Until), (Organisation).


  • Due Diligence for Potential Collaboration in Gallium Nitride Power Devices, Expert Advisor, 2019-2019, Collaborative Research in Engineering, Science and Technology (CREST)
  • Collaboration on GaN Power Devices, Expert Advisor, 2019-2021, MIMOS Berhad
  • CREST GaN-on-GaN Epitaxy Program Oversight Committee Member and Technical Committee Member, Committee Member, 2015-2020, Collaborative Research in Engineering Science and Technology (CREST)
  • Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Expert Advisor, 2014-2014, Collaborative Research in Engineering, Science & Technology (CREST)
  • CREST GaN-on-GaN Value Management Laboratory, Expert Advisor, 2014-2014, Collaborative Research in Engineering, Science & Technology (CREST)
  • Collaboration Agreement on Research of Gallium Nitride on Silicon (GaN-on-Si) Light-Emitting Diode (LED) between University of Malaya (UM), International Islamic University (IIUM), Universiti Sains Malaysia (USM) and ItraMAS Technology Sdn Bhd, Consulting Engineer/professional Engineer, 2013-2015, ItraMAS Technology Sdn Bhd
  • Collaboration Research for the Development of InGaN LED for ItraMAS Technology Sdn Bhd, Consulting Engineer/professional Engineer, 2012-2014, ItraMAS Technology Sdn Bhd
  • X-Ray Diffraction (XRD) Training to Staffs and Researchers at Nano-Optoelectronic Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia., Consulting Engineer/professional Engineer, 2011-2012, School of Physics, Universiti Sains Malaysia

AWARDS AND RECOGNITIONS
(Name of Award), (Awarding Institution), (Year Awarded), (Level).


  • Reviewer for Ceramics International, Editor Ceramics International, 2020, (International)
  • Pelantikan Sebagai Penyelaras Kluster Kursus Student Holistic Empowerment (She) (Cluster Coordinator for Student Holistic Empowerment (She) Course), University of Malaya, 2019, (University)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member), University of Malaya, 2019, (University)
  • Reviewer for Ceramics International, Ceramics International, 2019, (International)
  • Reviewer for Materials Letters, Editor Materials Letters, 2018, (International)
  • Equipment Donation from Osram to Ldmrc & Prc University of Malaya, Osram Opto Semiconductors Sdn Bhd, 2017, (National)
  • Reviewer for Applied Surface Science, Applied Surface Science, 2015, (International)
  • Who'S Who in The World 2011, Marquis Who'S Who Llc, 2010, (International)

PRESENTATIONS
(Title), (Event), (Date Presented), (Organiser), (Level).


INVITED SPEAKER
  • Improvement of InGaN-based LEDs on Si(111) Substrate by AlGaN/GaN Strained-Layer Superlattices (SLS) Underlayer, Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), 2010-10-18 to 2010-10-18, School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore., (International)
  • Enhanced Indium Adsorption for Longer Wavelength Luminescence of Semi-Polar (11-22) Cyan LED with Utilization of Strain Periodic Alternating Multi-Layer (SPAM-L), 1ST INTERNATIONAL CONFERENCE ON SUSTAINABLE ENVIRONMENTAL TECHNOLOGY 2019 (ISET2019), 2019-10-20 to 2019-10-22, Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia (UTM), Malaysia, (International)
ORAL
  • Enhancement of InGaN-based MQW grown on Si(111) substrate by underlying AlGaN/GaN SLS cladding layer , MRS Spring Meeting, San Francisco, USA, 2009-04-13 to 2009-04-17, Materials Research Society (MRS), (International)
  • Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD , National Conference on Physics 2010 / Persidangan Fizik Kebangsaan (PERFIK) 2010, 2010-10-28 to 2010-10-30, Multimedia University (MMU), Malaysia., (National)
  • InGaN-based Blue LED Grown on Si(111) Substrate , IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM) 2011, 2011-09-28 to 2011-09-29, IEEE Electron Device Society, (International)
  • Effects of DC power magnetron sputtering on Aluminium Nitride (AIN) thin film, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), 2014-02-28 to 2014-03-02, Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia, (National)
  • Influence of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), 2014-02-28 to 2014-03-02, Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia, (National)
  • Effect of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 2014-04-07 to 2014-04-07, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang, (National)
  • ZnO-based Current Spreading Layer for Nitride Blue Light Color LED, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 2014-04-07 to 2014-04-07, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang, (National)
  • Effects of DC Power Magnetron Sputtering on Aluminium Nitride (AlN) Thin Film, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 2014-04-07 to 2014-04-07, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang, (National)
POSTER
  • Growth of InGaN-based laser diode structure on silicon (111) subtrate, MRS International Materials Research Conference, Chongqing, China, 2008-06-09 to 2008-06-12, Materials Research Society (MRS), (International)
  • Characterization and fabrication of InGaN-based blue LED with underlyingAlGaN/GaN SLS cladding layer grown on Si(111) Substrate, MRS Spring Meeting, San Francisco, USA, 2009-04-13 to 2009-04-17, Materials Research Society (MRS), (International)

EXPERT LINKAGES
(Linkages Description), (Organisation), (Year of Involvement), (Duration), (Level).


  • Research Acculturation Collaborative Effort (RACE) [600-RMI/RACE 16/6/2(9/2013)], Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 2014, 24, (National)
  • Exploratory Research Grant Scheme (ERGS) Phase 1 / 2013 [203/PFIZIK/6730095], School of Physics, Universiti Sains Malaysia (USM), 2013, 24, (National)

EXPERT/TECHNICAL CONTRIBUTIONS
(Activity), (Organisation), (Role), (From)-(Until), (Level).


  • Interview Panel for MyBrainSc Scholarship 2019, Ministry of Education Malaysia, Interview Panel, 2019-2019, (National)
  • Colloquium Nanotechnology Gallium Nitride, Terahertz and Flexible Electronics 2019 (Kolokium Nanoteknologi GaN, Terahertz dan Flexible Electronics 2019), National Nanotechnolgy Centre (NNC), MESTECC, Committee Member, 2019-2019, (National)
  • Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp, Collaborative Research in Engineering, Science and Technology (CREST), Technical Advisor, 2018-2018, (National)
  • Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center, Expert Advisor, 2016-2016, (National)
  • Guest Speaker for CREST Semiconductor & Optoelectronic CLuster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center, Guest Speaker, 2016-2016, (National)
  • Advisory Committee for 3rd Malaysia Nitrides Research Group 2016, Malaysia Nitrides Research Group (MNRG), Advisor, 2016-2016, (National)
  • Member of GaN-on-GaN Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST), Committee Member, 2014-2014, (National)
  • Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Collaborative Research in Engineering, Science & Technology (CREST), Committee Member, 2014-2014, (International)

EVALUATION ACTIVITIES
(Description), (Evaluation Activity),(Year).


  • External examiner for University Tun Hussein Onn Malaysia (UTHM) MSc candidate BIBI ZULAIKHA BINTI BHARI with the title of "Investigation of Buffer Layer for Ag/Si Metal-Semiconductor Contacts", Thesis ,  (2019 - 2019)
  • External examiner for University Technology Malaysia (UTM) MSc candidate NUR FARHANA BINTI HASMUNI with the thesis title of "Structure and Properties of Conductive Graphene CNTs-Polymer Composites", Thesis ,  (2019 - 2019)
  • Reviewer for Ceramics International, Article In Journal ,  (2019 - 2019)

CONTRIBUTION TO SOCIETY
(Contribution To Society), (Level), (Start Date), (End Date).


  • Website Committee for Malaysia National Physics Conference / Persidangan Fizik Kebangsaan (PERFIK) 2016, (National), 21/12/2016 until 22/12/2016
  • CREST GaN-on-GaN Epitaxy Program Oversight Committee Member and Technical Committee Member, (National), 22/01/2015 until 31/12/2020
  • Organizing Committee Member for The "First Meeting of Malaysia Nitrides Research Group", 7 April 2014, INFORMM Auditorium Room, Universiti Sains Malaysia, Pulau Pinang, Malaysia. , (National), 07/04/2014 until 07/04/2014
  • Panel Member for Value Management Lab of Gallium Nitride on Gallium Nitride (GaN-on-GaN) Project Initiative by Collaborative Research in Engineering, Science & Technology (CREST), 10-14 March 2014, Sains@USM Building, Pulau Pinang, Malaysia. , (National), 10/03/2014 until 14/03/2014
  • Head of Protocol Committee, International Conference on Solid State Science and Technology 2012, 18-20 December 2012, Melaka, Malaysia., (National), 18/12/2012 until 20/12/2012
  • President of Nagoya Institute of Technology Alumni Malaysia (NITMAA), (International), 28/11/2010 until  

SUPERVISION


POST GRADUATE STUDENT
(Name of Degree), (Name of Candidates), (Title of Thesis), (Academic Session)

Completed
  • Doctoral Degree (PhD), Abdullah Haaziq Bin Ahmad Makinudin, SEMIPOLAR GAN ON FOREIGN SUBSTRATES VIA MOCVD FOR LED APPLICATIONS, 2019/2020
  • Doctoral Degree (PhD), Mohd Arif Bin Mohd Sarjidan, DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, 2018/2019
  • Doctoral Degree (PhD), Omar Ayad Fadhil, CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, 2018/2019
  • Master Degree, Sivanathan A/l Pariasamy @chelladurai, GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, 2017/2018
  • Doctoral Degree (PhD), Syed Waqar Hasan, Membrane inserted thermo-electrochemical generator for enhanced power generation, 2016/2017
  • Master Degree, Yusnizam Bin Yusuf, OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, 2016/2017
  • Doctoral Degree (PhD), Majid Azarang, ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, 2015/2016
  • Master Degree, Mohd Sobri Bin Abd Razak, EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, 2014/2015
  • Master Degree, Mazwan Bin Mansor, INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, 2014/2015
  • Master Degree, Nur Ameera Bt Anuar, NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, 2014/2015
  • Master Degree, Najwa Binti Surani, THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, 2014/2015
  • Doctoral Degree (PhD), Zurianti Binti Abd Rahman, STUDY OF THE EFFECT OF DOPING ON THE PHYSICAL PROPERTIES OF PEDOT: PSS FOR APPLICATIONS AS BUFFER LAYER IN ORGANIC SOLAR CELL AND AS P-TYPE MATERIAL IN THERMOELECTRIC DEVICE, 2013/2014
  • Master Degree, Nurul Zieyana Mohamed Annuar, MODELING AND SIMULATION OF METAL ORGANIC HALIDE VAPOR PHASE EPITAXY GROWH CHAMBER REACTOR, 2012/2013

TEACHING
(Course Title), (Academic Session), (No of Student), (No of Contact Hours).


POST GRADUATE
  • SEMICONDUCTOR TECHNOLOGY, 2019/2020(1), 7, 120
  • SEMICONDUCTOR DEVICE, 2018/2019(1), 1, 120
  • SEMICONDUCTOR DEVICES, 2018/2019(1), 1, 120
  • SEMICONDUCTOR DEVICE, 2016/2017(2), 4, 120
  • SEMICONDUCTOR DEVICE, 2016/2017(1), 2, 120
  • SEMICONDUCTOR DEVICE, 2012/2013(1), 7, 120
  • SEMICONDUCTOR DEVICE, 2012/2013(2), 9, 120
FIRST DEGREE
  • ADVANCED MATERIALS PROCESSING TECHNOLOGY, 2019/2020(1), 10, 120
  • ELECTRONICS PRACTICAL, 2018/2019(2), 46, 120
  • DIGITAL ELECTRONICS, 2018/2019(2), 33, 120
  • ELECTRONICS II, 2018/2019(1), 42, 120
  • ELECTRONICS PRACTICAL, 2018/2019(1), 15, 120
  • SEMICONDUCTOR MATERIALS AND DEVICES, 2017/2018(1), 23, 120
  • DIGITAL ELECTRONICS, 2017/2018(2), 7, 120
  • DIGITAL ELECTRONICS, 2017/2018(2), 14, 120
  • SEMICONDUCTOR MATERIALS AND DEVICES, 2017/2018(1), 19, 120
  • SEMICONDUCTOR MATERIALS AND DEVICES, 2017/2018(2), 11, 120
  • DIGITAL ELECTRONICS, 2017/2018(1), 5, 120
  • SEMICONDUCTOR DEVICES, 2016/2017(2), 15, 120
  • DIGITAL ELECTRONICS, 2016/2017(1), 5, 120
  • SEMICONDUCTOR DEVICES, 2016/2017(2), 4, 120
  • PHYSICS PRACTICAL, 2015/2016(1), 38, 48
  • DIGITAL ELECTRONICS, 2015/2016(1), 18, 42
  • PRACTICAL PHYSICS 1, 2015/2016, 34, 48
  • OPTICAL PROPERTIES OF MATERIALS, 2013/2014(1), 12, 80
  • OPTICAL PROPERTIES OF MATERIALS, 2013/2014(2), 5, 80
  • PHYSICS PRACTICAL, 2013/2014(2), 27, 120
  • PHYSICS PRACTICAL, 2013/2014(1), 11, 120
  • MICROPROCESSOR AND MICROCOMPUTER LABORATORY, 2010/2011(2), 23, 80
  • ELECTRONICS, 2010/2011(2), 14, 120
  • DIGITAL ELECTRONICS, 2010/2011(2), 15, 120
  • MICROPROCESSOR AND MICROCOMPUTER LABORATORY, 2010/2011(1), 15, 80
  • DIGITAL ELECTRONICS, 2010/2011(1), 5, 120