Curriculum Vitae

PERSONAL DETAILS

ASSOCIATE PROF. DR. AHMAD SHUHAIMI BIN ABU BAKAR

  • Associate Professor

  • Department of Physics
    Faculty of Science
  •    +603-79674206
  •   shuhaimi@um.edu.my

BIOGRAPHY

Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya. He currently leads Nitride Semiconductor Laboratory which houses full spectrum of capabilities for epitaxy, fabrication and analysis of nitride-based optoelectronics and power devices, including Taiyo Nippon Sanso Corporation's SR2000 and SR5000 MOCVDs, PE-ALD, ICP, Metallization, Photolithography, HR-XRD, AFM, etc. He obtained many research grants provided by Ministry of Higher Education, CREST, etc as well as donation from local industries. His group is in active collaboration with several semiconductor manufacturers and other research institutes/laboratories in Malaysia and overseas. His group interest is epitaxy of polar and non-polar GaN on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.

ADMINISTRATIVE DUTIES
(Role),(Level),(Duration)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member), University Malaya, 15/07/2019 to 14/07/2021
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya , Faculty, 14/03/2019 to 13/03/2020
  • CREST GaN-on-GaN Oversight Committee Member, National, 22/01/2015 to 31/12/2020
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya, Faculty, 20/04/2017 to 31/12/2018
  • Penyelaras Seminar Pascasiswazah (Candidature Defense) untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya., Faculty, 27/08/2013 to 31/12/2013
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2013/2014, Faculty, 05/11/2012 to 04/11/2013
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "Cadangan Mengubahsuai dan Menaiktaraf Bangunan AMCAL Termasuk Kerja-Kerja Sivil, Mekanikal dan Elektrikal untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya"., University Malaya, 15/08/2012 to 21/01/2013
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2012/2013, Faculty, 09/02/2012 to 31/12/2013
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "To Supply, Deliver, Install and Commission of Spare Parts, Maintenance and Consumables for Hydrogen Refueling System" untuk Projek Penyelidikan HIR-MOHE, Fakulti Kejuruteraan, Universiti Malaya., University Malaya, 06/08/2012 to 31/12/2012
  • Coordinator for Post-Graduate Candidature Defence of Physics Department, Faculty, 02/05/2011 to present
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2011/2012, Faculty, 28/02/2011 to present
ACADEMIC QUALIFICATION
(Qualification),(Field),(Institution),(Year)
  • D. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, LAIN-LAIN BIDANG KEJURUTERAAN, NAGOYA INSTITUTE OF TECHNOLOGY
  • M. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, LAIN-LAIN BIDANG KEJURUTERAAN, NAGOYA INSTITUTE OF TECHNOLOGY
  • B. ENG. ELECTRICAL AND COMPUTER, LAIN-LAIN BIDANG KEJURUTERAAN, NAGOYA INSTITUTE OF TECHNOLOGY
MEMBERSHIPS
(Organisation),(Role),(Duration),(Level)
  • Institute of Electrical and Electronics Engineers (IEEE), Member, 2011 to 2020 (International)
SPECIALIZATION
(Area)
Area of Expertise
  • SEMICONDUCTOR MATERIALS (Gallium Nitride, GaN, Indium Gallium Nitride, InGaN, Aluminum Gallium Nitride, AlGaN, Light Emitting Diode, LED, Laser Diode, LD, Multi-Quantum Well, MQW, Strained-Layer Superlattices, SLS)
  • TEACHING
    (Course Title),(Level of Study),(Institution),(Academic Session)
    Teaching
  • SIF2009 - ELECTRONICS PRACTICAL, First Degree, UNIVERSITY MALAYA (2018/2019 - 2 )
  • SIF2021 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2018/2019 - 2 )
  • SIF2009 - ELECTRONICS PRACTICAL, First Degree, UNIVERSITY MALAYA (2018/2019 - 1 )
  • SIF2020 - ELECTRONICS II, First Degree, UNIVERSITY MALAYA (2018/2019 - 1 )
  • SMGS6341 - SEMICONDUCTOR DEVICE, Post Graduate, UNIVERSITY MALAYA (2018/2019 - 1 )
  • SQA7008 - SEMICONDUCTOR DEVICES, Post Graduate, UNIVERSITY MALAYA (2018/2019 - 1 )
  • SIF2021 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2017/2018 - 2 )
  • SMEB3201 - SEMICONDUCTOR MATERIALS AND DEVICES, First Degree, UNIVERSITY MALAYA (2017/2018 - 1 )
  • SIF2021 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2017/2018 - 1 )
  • SMES1271 - PHYSICS PRACTICAL, First Degree, UNIVERSITY MALAYA (2015/2016 - 1 )
  • SMES3122 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2017/2018 - 2 )
  • SMES4321 - SEMICONDUCTOR DEVICES, First Degree, UNIVERSITY MALAYA (2016/2017 - 2 )
  • SIF1006 - PRACTICAL PHYSICS 1, First Degree, UNIVERSITY MALAYA (2015/2016 - )
  • SMGS6341 - SEMICONDUCTOR DEVICE, Post Graduate, UNIVERSITY MALAYA (2016/2017 - 2 )
  • SQA7009 - SEMICONDUCTOR TECHNOLOGY, Post Graduate, UNIVERSITY MALAYA (2019/2020 - 1 )
  • SMES3122 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2010/2011 - 1 )
  • SMGS6341 - SEMICONDUCTOR DEVICE, Post Graduate, UNIVERSITY MALAYA (2012/2013 - 2 )
  • SMES1271 - PHYSICS PRACTICAL, First Degree, UNIVERSITY MALAYA (2013/2014 - 2 )
  • SMEB3201 - SEMICONDUCTOR MATERIALS AND DEVICES, First Degree, UNIVERSITY MALAYA (2017/2018 - 2 )
  • SMES3122 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2015/2016 - 1 )
  • SMES1271 - PHYSICS PRACTICAL, First Degree, UNIVERSITY MALAYA (2013/2014 - 1 )
  • SMEB2203 - OPTICAL PROPERTIES OF MATERIALS, First Degree, UNIVERSITY MALAYA (2013/2014 - 2 )
  • SIF2017 - SEMICONDUCTOR DEVICES, First Degree, UNIVERSITY MALAYA (2016/2017 - 2 )
  • SMEB2203 - OPTICAL PROPERTIES OF MATERIALS, First Degree, UNIVERSITY MALAYA (2013/2014 - 1 )
  • SMGS6341 - SEMICONDUCTOR DEVICE, Post Graduate, UNIVERSITY MALAYA (2012/2013 - 1 )
  • SMES3122 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2010/2011 - 2 )
  • SMGS6341 - SEMICONDUCTOR DEVICE, Post Graduate, UNIVERSITY MALAYA (2016/2017 - 1 )
  • SMES3122 - DIGITAL ELECTRONICS, First Degree, UNIVERSITY MALAYA (2016/2017 - 1 )
  • SMES3171 - MICROPROCESSOR AND MICROCOMPUTER LABORATORY, First Degree, UNIVERSITY MALAYA (2010/2011 - 2 )
  • SMES3171 - MICROPROCESSOR AND MICROCOMPUTER LABORATORY, First Degree, UNIVERSITY MALAYA (2010/2011 - 1 )
  • SMEB4302 - ADVANCED MATERIALS PROCESSING TECHNOLOGY, First Degree, UNIVERSITY MALAYA (2019/2020 - 1 )
  • SMES2104 - ELECTRONICS, First Degree, UNIVERSITY MALAYA (2010/2011 - 2 )
  • PUBLICATIONS
    (Title of publication in APA style)
    WoS
    2021
    • Abd Rahman, M. N., Shuhaimi, A., Khudus, M., Anuar, A., Zainorin, M. Z., Talik, N. A., . . . Abd Majid, W. H. (2021). Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD. Journal of Electronic Materials, 50(4), 2313-2322. doi: 10.1007/s11664-021-08768-0
    • Makinudin, A. H. A., Omar, A., Abu Bakar, A. S., Anuar, A., & Supangat, A. (2021). Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720, 6. doi: 10.1016/j.tsf.2020.138489
    • Rais, S. A. A., Hassan, Z., Abu Bakar, A. S., Abd Rahman, M. N., Yusuf, Y., Taib, M. I. M., . . . Shoji, D. (2021). Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11(3), 926-935. doi: 10.1364/ome.413417
    • Makinudin, A. H. A., Al-Zuhairi, O., Anuar, A., Zainorin, M. Z., Bakar, A. S. A., DenBaars, S., & Supangat, A. (2021). Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector. Materials Letters, 286, 5. doi: 10.1016/j.matlet.2020.129244
    • Zahir, N., Talik, N. A., Harun, H. N., Kamarundzaman, A., Tunmee, S., Nakajima, H., . . . Majid, W. H. A. (2021). Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540, 12. doi: 10.1016/j.apsusc.2020.148406
    • Abd Rahman, M. N., Shuhaimi, A., Seng, O. C., Tan, G., Anuar, A., Talik, N. A., . . . Abd Majid, W. H. (2021). The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science-Materials in Electronics, 32(3), 3211-3221. doi: 10.1007/s10854-020-05070-3
    • Hussin, H. N., Talik, N. A., Abd Rahman, M. N., Mahat, M. R., Poopalan, P., Shuhaimi, A., & Abd Majid, W. H. (2021). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, 121, 8. doi: 10.1016/j.mssp.2020.105431
    Refereed Journals
    2021
    • Mohd Nazri Abd Rahman, Ahmad Shuhaimi, Ooi Chong Seng, Gary Tan, Afiq Anuar, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Narong Chanlek & Wan Haliza Abd Majid. (2021). The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. J Mater Sci: Mater Electron (2021). https://doi.org/10.1007/s10854-020-05070-3 (WoS)
    • Hussin, Hayatun Najihah, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Mahat, Mohd Raqif, Poopalan, Prabakaran, Shuhaimi, Ahmad, Abd Majid, Wan Haliza. (2020). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, January 2021, 121. (WoS)
    • Shamsul Amir Abdul Rais, Zainuriah Hassan, Ahmad Shuhaimi Abu Bakar, Mohd Nazri Abd Rahman, Yusnizam Yusuf, Muhamad Ikram Md Taib, Abdullah Fadil Sulaiman, Hayatun Najiha Hussin, Mohd Fairus Ahmad, Mohd Natashah Norizan, Keiji Nagai, Yuka Akimoto, and Dai Shoji (2021). Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express 11(3):926 (WoS)
    • Norhilmi Zahir, Noor Azrina Talik, Hazmi Naim Harun, Anas Kamarundzaman, Sarayut Tunmee, Hideki Nakajima, Narong Chanlek, Ahmad Shuhaimi, Wan Haliza Abd Majid (2021). Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, Volume 540, Part 2, 28 February 2021, 148406. (WoS)
    • Adreen Azman, Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Wan Haliza Abd Majid. (2021). The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, Volume 131, 15 August 2021, 105836. (WoS)
    • Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat & Wan Haliza Abd Majid. (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a plane GaN. Scientific Reports, Volume 11, Article 9724 (2021). (WoS)
    • Samsudin, Muhammad Esmed Alif; Yusuf, Yusnizam ; Christian, Zollner; MIchael, Iza; DenBaars, Steven; Abu Bakar, Ahmad Shuhaimi; and Zainal, Norzaini. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN based UVC LED. Microelectronics International, accepted. (WoS)
    • Al-Zuhairi Omar, Abdullah Haaziq Ahmad Makinudin, Ahmad Shuhaimi, AfiqAnuar, Anas Kamarudzaman, Najwa Surani, Azzuliani Supangat. (2021). Enhanced Indium Adsorption and Surface Evolution of Semi-Polar (11-22) LED via a Strain Periodic Alternating Superlattice (SPAS-L). Materials Today Communications, in-press, 102441. (WoS)
    2020
    • Afiq Anuar, Abdullah Haaziq Ahmad Makinudin, Omar Al-Zuhairi, Narong Chanlek, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method. Vacuum 174, 109208 (2020). (WoS)
    • Farina S. M. Samsamnun, Nur F. Zulkipli, Muhammad I. M. A. Khudus, Ahmad Shuhaimi, Wan H. A. Majid, Sulaiman W. Harun. 2019. Alq3 saturable absorber for generating Q switched pulses in erbium doped fiber laser. Microwave and Optical Technology Letters, Early View. (WoS)
    • Mohd Nazri Abd Rahman, Yusnizam Yusuf, Afiq Anuar, Mohamad Raqif Mahat, Narong Chanlek, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Norzaini Zainal, Wan Haliza Abd Majid and Ahmad Shuhaimi. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 2020, Advance Article (WoS)
    • B. Nizamani, A.A.A. Jafry, M.I.M. Abdul Khudus, F.A. Memon, A. Shuhaimi, N. Kasim, E. Hanafi, M. Yasin, S.W. Harun. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q switched erbium-doped fiber laser. Optics & Laser Technology, 124, 105998 (2020). (WoS)
    • N. Zainal, M.E.A.Samsudin, M. Ikram Md Taib, M.A.Ahmad, A. Shuhaimi (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures 148, 106722 (2020). (WoS)
    • Anas Kamarudzaman, Ahmad Shuhaimi Bin Abu Bakar, Adreen Azman, Al-Zuhairi Omar, AzzulianiSupangat, Noor AzrinaTalik. (2020). Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, Volume 105, January 2020, 104700. (WoS)
    • Afiq Anuar, Abdullah Haaziq, Ahmad Makinudin, Omar Al-Zuhairi, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Crystal quality and surface structure tuning of semi-polar (11 22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films 697, 137817 (2020). (WoS)
    • Mohamad Raqif Mahat, Noor AzrinaTalik, Mohd Nazri Abd Rahman, Mohd Afiq Anuar, Kamarul Allif, Adreen Azman, Hideki Nakajima, Ahmad Shuhaimi, Wan Haliza Abd Majid. 2020. Electronic surface, optical and electrical properties of p GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, Volume 106, 104757 (2020). (WoS)
    • F.S.M. Samsamnun, N.F. Zulkipli, M.A.M. Sarjidan, S.W. Harun, W.H.A. Majid, M.I.M.A. Khudus, A. Shuhaimi, A.H.A. Rosol, M.F.M. Rusdi, A.A.A. Jafry, M. Yasin. (2019) Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 102073 (2020). (WoS)
    2019
    • Rahman, M. N. A., Talik, N. A., Khudus, M. I. A., Sulaiman, A. F., Allif, K., Zahir, N. M., & Shuhaimi, A. (2019). Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm. (WoS)
    • S. Najwa, A. Shuhaimi, N.A. Talik, N. Ameera, M. Sobri & M.Rusop (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science 479, 1220-1225. (WoS)
    • Mohd Arif Mohd Sarjidan, Ahmad Shuhaimi, Wan Haliza Abd. Majid (2019). Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) With Directly Deposited Silver Nanowires Intermediate Source Electrode. Journal of Nanoscience and Nanotechnology, 19, 6995 7003 (WoS)
    • Rahman, M. N. A., Sulaiman, A. F., Khudus, M. I. A., Allif, K., Talik, N. A., Basri, S. H., & Shuhaimi, A. (2019). Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58(SC), SC1037. (WoS)
    • M Ikram Md Taib, M E A Samsudin, E A Alias, S N Waheeda, N Ibrahim, A Shuhaimi and N Zainal. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, Volume 6, Number 8. (WoS)
    • Abdullah Haaziq Ahmad Makinudin, Al-Zuhairi Omar, Afiq Anuar, Ahmad Shuhaimi Abu Bakar, Steven P. DenBaars, Azzuliani Supangat. 2019. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11 22) GaN Template, Crystal Growth & Design 19, 6092-6099 (2019). (WoS)
    2018
    • Adreen Azman, Ahmad Shuhaimi, Al-Zuhairi Omar, Anas Kamarundzaman, Muhammad Imran Mustafa Abdul Khudus, Azharul Ariff, M.E.A. Samsudin, Norzaini Zainal, Saadah Abd Rahman. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, in-press. (WoS)
    • Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman & AzzulianiSupangat. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, Volume 117, Pages 207-214. (WoS)
    • Ahmad Hadi Ali, Zainuriah Hassan, Ahmad Shuhaimi. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, Volume 443, Pages 544-547. (WoS)
    • P.C. Sivanathan, Ahmad Shuhaimi, Hebal Hamza,Stacy J. Kowsz, Muhammad I.M. Abdul Khudus, Hongjian Li, Kamarul Allif. 2018. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD. Superlattices and Microstructures, In Press, Accepted. (WoS)
    • Mohd Nazri Abd. Rahman, Ahmad Shuhaimi, Yusnizam Yusuf, Hongjian Li, Abdullah Fadil Sulaiman, Muhammad Esmed Alif Samsudin, Norzaini Zainal, Muhammad I.M. Abdul Khudus. 2018. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures 120, 319-326. (WoS)
    • Al-Zuhairi Omar, Ahmad Shuhaimi, Abdullah Haaziq Ahmad Makinudin, Muhammad I.M. Abdul Khudus, Azzuliani Supangat. (2018). Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing 86, 1 November 2018, Pages 1 7. (WoS)
    2017
    • Ganesh, V., Alizadeh, M., Shuhaimi, A., Adreen, A., Pandikumar, A., Jayakumar, M., Huang, N.M., Ramesh, R., Baskar, K., and Rahman S.A. (2017). Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. Journal of Alloys and Compounds 706 (2017) 629-636. (WoS)
    • Hasan, S.W., Said, S.M., Bakar, A.S.B.A. et al. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells. Journal of Materials Science, (2017), pp 1-11. (WoS)
    • K H Tan, H A Tajuddin, R A Ahmad, A Suhaimy, M R Johan , Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties, Optik (WoS)
    2016
    • Rahman, M. N. A., Yusuf, Y., Mansor, M., Shuhaimi, A. 2016. Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD Applied Surface Science. (Tier 1, Impact Factor = 3.150) (WoS)
    • Hasan, S. W., Said, S. M., Sabri, M. F. M., Bakar, A. S. A., Hashim, N. A., Hasnan, M. M. I. M., Pringle, J. M. & MacFarlane, D. R. (2016). High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane. Scientific reports, 6(29328), 1-11. (WoS)
    • Amina Benzina, Abdelhadi Lachebi, Ahmad Shuhaimi, Saadah Abdul Rahman, Hamza Abid. 2016. First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke Johnson (mBJ) exchange potential. Optik. In Press, Accepted Manuscript. (WoS)
    2015
    • Azimah, E., Zainal, N., Shuhaimi, A., Hassan, Z. 2015. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN Superlattices and Microstructures. (Tier 2, Impact Factor = 2.097) (WoS)
    • Ganesh, V., Alizadeh, M., Shuhaimi, A., Pandikumar, A., Goh, B. T., Huang, N. M., Rahman, S. A. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation Rsc Advances. (Tier 1, Impact Factor = 3.840) (WoS)
    • Ameera, N., Shuhaimi, A., Surani, N., Rusop, M., Hakim, M., Mamat, M. H., Mansor, M., Sobri, M., Ganesh, V., Yusuf, Y. 2015. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode Ceramics International. (Tier 1, Impact Factor = 2.605) (WoS)
    • Azarang, M., Shuhaimi, A., Yousefi, R., Jahromi, S. P. 2015. One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue Rsc Advances. (Tier 1, Impact Factor = 3.840) (WoS)
    • Azarang, M., Shuhaimi, A., Sookhakian, M. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration Rsc Advances. (Tier 1, Impact Factor = 3.840) (WoS)
    • Vattikondala Ganesh, Mahdi Alizadeh, Ahamad Shuhaimi, Alagarsamy Pandikumar, Boon Tong Goh, Nay Ming Huang, and Saadah Abdul Rahman. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation. RSC Advances 5: 17325-17335. (WoS)
    • Annuar NZM, Sabri MFM & Bakar ASA. 2014. Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber. Microsyst Technol, 21(1), 309-318 (2015) (WoS)
    • E. Azimah, N. Zainal, A. Shuhaimi & Z. Hassan. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. Superlattices and Microstructures 82 (2015) 592-598. (WoS)
    • M. Alizadeh, V. Ganesh, H. Mehdipour, N.F.F Nazarudin, B.T. Goh, A. Shuhaimi, S.A. Rahman. 2015. Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation. Journal of Alloys and Compounds 632 (2015) 741-747. (WoS)
    • Majid Azarang, Ahmad Shuhaimi & Mehran Sookhakian. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration. RSC Advances. Accepted. (WoS)
    2014
    • Ali, A. H., Abu Bakar, A. S., Hassan, Z. 2014. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer Applied Surface Science. (Tier 1, Impact Factor = 2.538) (WoS)
    • Ali, A. H., Shuhaimi, A., Hassan, Z. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes Applied Surface Science. (Tier 1, Impact Factor = 2.538) (WoS)
    • Najwa, S., Shuhaimi, A., Ameera, N., Hakim, K. M., Sobri, M., Mazwan, M., Mamat, M. H., Yusnizam, Y., Ganesh, V., Rusop, M. 2014. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979) (WoS)
    • Azarang, M., Shuhaimi, A., Yousefi, R., Golsheikh, A. M., Sookhakian, M. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB Ceramics International. (Tier 1, Impact Factor = 2.086) (WoS)
    • Sobri, M., Shuhaimi, A., Hakim, K. M., Ganesh, V., Mamat, M. H., Mazwan, M., Najwa, S., Ameera, N., Yusnizam, Y., Rusop, M. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979) (WoS)
    • Ahmad Hadi Ali, Ahmad Shuhaimi & Zainuriah Hassan. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes. Applied Surface Science 288: 599-603. (WoS/SCOPUS)
    • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014). (WoS)
    • M. Sobri, A. Shuhaimi, K.M. Hakim, V. Ganesh, M.H. Mamat, M. Mazwan, S. Najwa, N. Ameera, Y. Yusnizam & M. Rusop. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering. Superlattices and Microstructures 70: 82-90. (WoS)
    • N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, A. Shuhaimi Abu Bakar. 2014. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber. Microsystem Technologies 20. (WoS)
    • S. NAJWA, A. SHUHAIMI, N. AMEERA, K. M. HAKIM, M. SOBRI, M. MAZWAN, M. Z. MUSA, M. H. MAMAT & M. RUSOP. 2014. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering. Advanced Materials Research 895: 12-16. (WoS/SCOPUS)
    • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, A. Moradi Golsheikh, M. Sookhakian. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB. Ceramics International 40 (2014) 10217-10221. (WoS)
    • Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M. Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014). (WoS)
    • S. Najwa, A. Shuhaimi, N. Ameera, K. M. Hakim, M. Sobri, M. Mazwan, M. H. Mamat, Y. Yusnizam, V. Ganesh & M. Rusop. 2014. The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering. Superlattices and Microstructures 72 (2014) 140-147. (WoS)
    • M. Alizadeh, H. Mehdipour, V. Ganesh, A. N. Ameera, B. T. Goh, A. Shuhaimi, S. A. Rahman. 2014. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films. Applied Physics A: Materials Science & Processing s00339-014-8649-z (2014). (WoS)
    • Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar & Zainuriah Hassan. 2014. Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science 315 (2014) 387-391. (WoS)
    • N. Ameera, A. Shuhaimi, S. Najwa, M. Rusop, K.M. Hakim, M.H. Mamat, M. Mazwan, M. Sobri, V. Ganesh & Y. Yusnizam. 2014. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode. Ceramics International. Accepted (2014). (WoS)
    2013
    • Ali, A. H., Abu Bakar, A. S., Egawa, T., Hassan, Z. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer Superlattices and Microstructures. (Tier 2, Impact Factor = 1.564) (WoS)
    • NZM Annuar, MFM Sabri. ASA Bakar, Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor, Advanced Material Research, vol. 626 (2013), 396-400 (WoS)
    • Zurianti A. Rahman, Khaulah Sulaiman, Mohamad Rusop & Ahmad Shuhaimi. 2013. A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device. Advanced Materials Research 667: 165-171. (WoS)
    • Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar, Takashi Egawa & Zainuriah Hassan. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer. Superlattices and Microstructures 60: 201 207. (WoS)
    • Ahmad Hadi Ali, Ahmad Shuhaimi, Zainuriah Hassan & Yushamdan Yusof. 2013. Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x- ray diffraction. Advanced Materials Research 620: 22- 27. (WoS)
    • E. Azimah, N. Zainal, Z. Hassan, A. Shuhaimi & Azlan Bahrin. 2013. Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research 620: 453-457. (WoS)
    • N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, & A. Shuhaimi Abu Bakar. 2013. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor. Advanced Materials Research 626: 396-400. (WoS)
    2012
    • Rahman, Z. A., Sulaiman, K., Shuhaimi, A., Rusop, M. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell  (WoS)
    • Zurianti A. Rahman, Khaulah Sulaiman, Ahmad Shuhaimi, Mohamad Rusop. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell. Advanced Materials Research 501: 252-256. (WoS)
    2011
    • Shuhaimi, A., Hassan, Z. & Egawa, T. 2011. InGaN-based blue LED grown on Si(111) substrate. IEEE RSM2011 Proc. 6088279:6-8. (WoS)
    • Shuhaimi, A. & Egawa, T. 2011. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD. AIP Conf. Proc. 1328: 232-234. (WoS)
    2010
    • Takashi Egawa and Bin Abu Bakar Ahmad Shuhaimi, High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD, J. Phys. D: Appl. Phys. 43, 354008 (2010). (WoS)
    • Bin Abu Bakar Ahmad Shuhaimi, Arata Watanabe, and Takashi Egawa, Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-based Multi- Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer, Jpn. J. Appl. Phys. 49 (2010) 021002. (WoS)
    2009
    • Bin Abu Bakar Ahmad Shuhaimi, Takaaki Suzue, Yukiyasu Nomura, Yoshinori Maki and Takashi Egawa, Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer, Mater. Res. Soc. Symp. Proc. 1167 (2009) O02-05. (WoS)
    • Bin Abu Bakar Ahmad Shuhaimi, Pum Chian Khai, Takaaki Suzue, Yukiyasu Nomura and Takashi Egawa, Characterization and Fabrication of InGaN-based blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate, Mater. Res. Soc. Symp. Proc. 1167 (2009) O04-01. (WoS)
    • Bin Abu Bakar Ahmad Shuhaimi , Hiroyuki Kawato, Youhua Zhu and Takashi Egawa, Growth of InGaN-based laser diode structure on silicon (111) substrate, Journal of Physics: Conference Series 152 (2009) 012007. (WoS)
    RESEARCH PROJECT
    (Project title),(Role),(Duration),(Level)
    RACE Grant
  • Nanostructure Evolution of ZnO Thin Films Incorporated with Nanorod Layers: The Amelioration of Highly c-Axis Oriented for the Growth of Defect Free Film , Consultant, 2014 - 2016 (National)
  • Postgraduate Research Grant(PPP)
  • Investigation of Morphological Structural and Optical Properties of ZnO nanostructures, Coordinator, 2013 - 2015 (National)
  • Exploratory Research Grant Scheme (ERGS)
  • Producing high quality cubic GaN using porous GaAs substrate for high efficient devices., Consultant, 2013 - 2015
  • Investigation on Vapor Phase Epitaxy Processes for Growth of Nitride-based Wide Bandgap Semiconductor Thin-Films, Principal Investigator(PI), 2011 - 2013
  • Geran Penyelidikan Universiti Malaya (UMRG)
  • Probing Nano and Electronics Structures of Low Dimensional Semiconducting Materials , Consultant, 2012 - 2012 (National)
  • Development of Metal-Organic Halide Vapor Phase Epitaxy (MOHVPE) for Growth of Galium Nitride (GaN) , Principal Investigator(PI), 2011 - 2014 (National)
  • Geran Universiti Penyelidikan (RU) Universiti Sains Malaysia (USM)
  • Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices , Consultant, 2012 - 2014 (National)
  • APEX Delivering Excellence Grant (DE2012)
  • Development of AlGaN/GaN strained-layer superlattice stack structure for high energy-efficient and cost-effective lnGaN based LEDs , Consultant, 2012 - 2014 (National)
  • MOHE
  • Synthesis and Application of Low Dimensional Materials , Consultant, 2011 - 2015
  • Geran Penyelidikan Jangka Pendek Universiti Sains Malaysia (USM)
  • Optical Study on III-Nitride Semiconductor Materials and Its Devices , Consultant, 2011 - 2013 (National)
  • SUPERVISION
    Postgraduate Student
    (Title of Thesis),(Name of Candidates),(Institution),(Academic Level)
    Completed
    • CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, OMAR AYAD FADHIL, University of Malaya (UM) (Post Graduate Student)
    • DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, MOHD ARIF BIN MOHD SARJIDAN, University of Malaya (UM) (Post Graduate Student)
    • STUDY OF THE EFFECT OF DOPING ON THE PHYSICAL PROPERTIES OF PEDOT: PSS FOR APPLICATIONS AS BUFFER LAYER IN ORGANIC SOLAR CELL AND AS P-TYPE MATERIAL IN THERMOELECTRIC DEVICE, ZURIANTI BINTI ABD RAHMAN, University of Malaya (UM) (Post Graduate Student)
    • GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, SIVANATHAN A/L PARIASAMY @CHELLADURAI, University of Malaya (UM) (Post Graduate Student)
    • ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, MAJID AZARANG, University of Malaya (UM) (Post Graduate Student)
    • OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, YUSNIZAM BIN YUSUF, University of Malaya (UM) (Post Graduate Student)
    • Membrane inserted thermo-electrochemical generator for enhanced power generation, SYED WAQAR HASAN, University of Malaya (UM) (Post Graduate Student)
    • SEMIPOLAR GAN ON FOREIGN SUBSTRATES VIA MOCVD FOR LED APPLICATIONS, ABDULLAH HAAZIQ BIN AHMAD MAKINUDIN, University of Malaya (UM) (Post Graduate Student)
    • THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, NAJWA BINTI SURANI, University of Malaya (UM) (Post Graduate Student)
    • NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, NUR AMEERA BT ANUAR, University of Malaya (UM) (Post Graduate Student)
    • INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, MAZWAN BIN MANSOR, University of Malaya (UM) (Post Graduate Student)
    • EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, MOHD SOBRI BIN ABD RAZAK, University of Malaya (UM) (Post Graduate Student)
    • MODELING AND SIMULATION OF METAL ORGANIC HALIDE VAPOR PHASE EPITAXY GROWH CHAMBER REACTOR, NURUL ZIEYANA MOHAMED ANNUAR, University of Malaya (UM) (Post Graduate Student)
    SOCIAL RESPONSIBILITY ACTIVITIES
    (Contribution to Society),(Duration),(Level)
    • Website Committee for Malaysia National Physics Conference / Persidangan Fizik Kebangsaan (PERFIK) 2016, 21/12/2016 to 22/12/2016
    • CREST GaN-on-GaN Epitaxy Program Oversight Committee Member and Technical Committee Member, 22/01/2015 to 31/12/2020
    • Organizing Committee Member for The "First Meeting of Malaysia Nitrides Research Group", 7 April 2014, INFORMM Auditorium Room, Universiti Sains Malaysia, Pulau Pinang, Malaysia. , 07/04/2014 to 07/04/2014
    • Panel Member for Value Management Lab of Gallium Nitride on Gallium Nitride (GaN-on-GaN) Project Initiative by Collaborative Research in Engineering, Science & Technology (CREST), 10-14 March 2014, Sains@USM Building, Pulau Pinang, Malaysia. , 10/03/2014 to 14/03/2014
    • Head of Protocol Committee, International Conference on Solid State Science and Technology 2012, 18-20 December 2012, Melaka, Malaysia., 18/12/2012 to 20/12/2012
    • President of Nagoya Institute of Technology Alumni Malaysia (NITMAA), 2021
    ACADEMIC/PROFESSIONAL SERVICES
    Evaluation Activity
    (Activity),(Duration),(Category)
  • External examiner for University Tun Hussein Onn Malaysia (UTHM) MSc candidate BIBI ZULAIKHA BINTI BHARI with the title of "Investigation of Buffer Layer for Ag/Si Metal-Semiconductor Contacts", 2019 to 2019 (Thesis)
  • External examiner for University Technology Malaysia (UTM) MSc candidate NUR FARHANA BINTI HASMUNI with the thesis title of "Structure and Properties of Conductive Graphene CNTs-Polymer Composites", 2019 to 2019 (Thesis)
  • Reviewer for Ceramics International, 2019 to 2019 (Article in Journal)
  • Expert Linkages
    (Linkages Description),(Organisation),(Duration of Involvement),(Level)
  • Research Acculturation Collaborative Effort (RACE) [600-RMI/RACE 16/6/2(9/2013)], Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 2014 (National)
  • Exploratory Research Grant Scheme (ERGS) Phase 1 / 2013 [203/PFIZIK/6730095], School of Physics, Universiti Sains Malaysia (USM), 2013 (National)
  • Academic/Technical Contribution
    (Activity),(Organisation),(Duration),(Role)
  • Interview Panel for MyBrainSc Scholarship 2019 , Ministry of Education Malaysia, 2019 - 2019 (Interview Panel)
  • Colloquium Nanotechnology Gallium Nitride, Terahertz and Flexible Electronics 2019 (Kolokium Nanoteknologi GaN, Terahertz dan Flexible Electronics 2019), National Nanotechnolgy Centre (NNC), MESTECC, 2019 - 2019 (Committee Member)
  • Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp , Collaborative Research in Engineering, Science and Technology (CREST), 2018 - 2018 (Technical Advisor)
  • Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center, 2016 - 2016 (Expert Advisor)
  • Guest Speaker for CREST Semiconductor & Optoelectronic CLuster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center, 2016 - 2016 (Guest Speaker)
  • Advisory Committee for 3rd Malaysia Nitrides Research Group 2016, Malaysia Nitrides Research Group (MNRG), 2016 - 2016 (Advisor)
  • Member of GaN-on-GaN Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST), 2014 - 2014 (Committee Member)
  • Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Collaborative Research in Engineering, Science & Technology (CREST), 2014 - 2014 (Committee Member)
  • AWARD AND STEWARDSHIP
    (Name of Award/Stewardship),(Awarding Institution),(Year Awarded),(Type of Award)
    • Reviewer for Ceramics International, Editor Ceramics International, 2020 (RESEARCH)
    • Pelantikan Sebagai Penyelaras Kluster Kursus Student Holistic Empowerment (SHE) (Cluster Coordinator for Student Holistic Empowerment (SHE) Course), University of Malaya, 2019 (SERVICES)
    • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member), University of Malaya, 2019 (OTHERS)
    • Reviewer for Ceramics International, Ceramics International, 2019 (RESEARCH)
    • Reviewer for Materials Letters, Editor Materials Letters, 2018 (RESEARCH)
    • Equipment Donation from OSRAM to LDMRC & PRC University of Malaya, OSRAM Opto Semiconductors Sdn Bhd, 2017 (RESEARCH)
    • Reviewer for Applied Surface Science, Applied Surface Science, 2015 (RESEARCH)
    • Who's Who in The World 2011, Marquis Who's Who LLC, 2010 (RESEARCH)
    CONSULTANCY PROJECT
    (Project title),(Organisation),(Duration),(Role),(Level)
    • Collaboration on GaN Power Devices, MIMOS Berhad, 01/01/2019 to 01/01/2021 (National)
    • Due Diligence for Potential Collaboration in Gallium Nitride Power Devices, Collaborative Research in Engineering, Science and Technology (CREST), 01/01/2019 to 01/01/2019 (International)
    • CREST GaN-on-GaN Epitaxy Program Oversight Committee Member and Technical Committee Member, Collaborative Research in Engineering Science and Technology (CREST), 01/12/2015 to 01/12/2020 (National)
    • CREST GaN-on-GaN Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST), 01/01/2014 to 01/01/2014 (National)
    • Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Collaborative Research in Engineering, Science & Technology (CREST), 01/01/2014 to 01/01/2014 (International)
    PAPER PRESENTED
    (Title),(Event),(Date Presented),(Organiser),(Level)
    INVITED SPEAKER
  • Enhanced Indium Adsorption for Longer Wavelength Luminescence of Semi-Polar (11-22) Cyan LED with Utilization of Strain Periodic Alternating Multi-Layer (SPAM-L), 1ST INTERNATIONAL CONFERENCE ON SUSTAINABLE ENVIRONMENTAL TECHNOLOGY 2019 (ISET2019), 20/10/2019 to 22/10/2019, Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia (UTM), Malaysia (International)
  • Improvement of InGaN-based LEDs on Si(111) Substrate by AlGaN/GaN Strained-Layer Superlattices (SLS) Underlayer, Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), 18/10/2010 to 18/10/2010, School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore. (International)
  • ORAL PRESENTER
  • ZnO-based Current Spreading Layer for Nitride Blue Light Color LED, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 07/04/2014 to 07/04/2014, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National)
  • Effect of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 07/04/2014 to 07/04/2014, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National)
  • Effects of DC Power Magnetron Sputtering on Aluminium Nitride (AlN) Thin Film, 1st Meeting of Malaysia Nitrides Research Group (MNRG), 07/04/2014 to 07/04/2014, Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National)
  • Effects of DC power magnetron sputtering on Aluminium Nitride (AIN) thin film, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), 28/02/2014 to 02/03/2014, Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National)
  • Influence of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), 28/02/2014 to 02/03/2014, Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National)
  • InGaN-based Blue LED Grown on Si(111) Substrate , IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM) 2011, 28/09/2011 to 29/09/2011, IEEE Electron Device Society (International)
  • Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD , National Conference on Physics 2010 / Persidangan Fizik Kebangsaan (PERFIK) 2010, 28/10/2010 to 30/10/2010, Multimedia University (MMU), Malaysia. (National)
  • Enhancement of InGaN-based MQW grown on Si(111) substrate by underlying AlGaN/GaN SLS cladding layer , MRS Spring Meeting, San Francisco, USA, 13/04/2009 to 17/04/2009, Materials Research Society (MRS) (International)
  • POSTER PRESENTER
  • Characterization and fabrication of InGaN-based blue LED with underlyingAlGaN/GaN SLS cladding layer grown on Si(111) Substrate, MRS Spring Meeting, San Francisco, USA, 13/04/2009 to 17/04/2009, Materials Research Society (MRS) (International)
  • Growth of InGaN-based laser diode structure on silicon (111) subtrate, MRS International Materials Research Conference, Chongqing, China, 09/06/2008 to 12/06/2008, Materials Research Society (MRS) (International)