Curriculum Vitae

ASSOCIATE PROF. DR. AHMAD SHUHAIMI BIN ABU BAKAR

Associate Professor
  • Department of Physics
    Faculty of Science
  • 0379674206

BIOGRAPHY


Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya. He currently leads Nitride Semiconductor Laboratory which houses full spectrum of capabilities for epitaxy, fabrication and analysis of nitride-based optoelectronics and power devices, including Taiyo Nippon Sanso Corporation's SR2000 and SR5000 MOCVDs, PE-ALD, ICP, Metallization, Photolithography, HR-XRD, AFM, etc. He obtained many research grants provided by Ministry of Higher Education, CREST, etc as well as donation from local industries. His group is in active collaboration with several semiconductor manufacturers and other research institutes/laboratories in Malaysia and overseas. His group interest is epitaxy of polar and non-polar GaN on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.

AREAS OF EXPERTISE


  • SEMICONDUCTOR MATERIALS
    Gallium Nitride, GaN, Indium Gallium Nitride, InGaN, Aluminum Gallium Nitride, AlGaN, Light Emitting Diode, LED, Laser Diode, LD, Multi-Quantum Well, MQW, Strained-Layer Superlattices, SLS

ACADEMIC QUALIFICATION


  • D. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, (Engineering Physics, Electronics and Mechanics)
    Nagoya Institute of Technology
  • M. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, (Engineering Physics, Electronics and Mechanics)
    Nagoya Institute of Technology
  • B. ENG. ELECTRICAL AND COMPUTER, (Electrical and Computer Engineering)
    Nagoya Institute of Technology

ADMINISTRATIVE DUTIES


  • AJK Penubuhan Program Sains Bahan Dengan Indistri (Committee Member for the New Establishment of Materials Science with Industry Academic Program)
    04 Jan 2023 - 31 Dec 2024 (Department)
  • Committee Members
    01 Jan 2023 - 31 Dec 2024 (Department of Physics, Faculty of Science)
  • Coordinator for Post-Graduate Candidature Defence of Physics Department
    02 May 2011 - present (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2011/2012
    28 Feb 2011 - present (Department of Physics, Faculty of Science)
  • Ahli Task Force Khas Bagi Hala Tuju Penyelidikan Fakulti Sains 2023-2028 (Member of Special Task Force for Research Direction for the Faculty of Science 2023-2028)
    01 Feb 2023 - 03 Feb 2023 (Department of Physics, Faculty of Science)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member)
    15 Jul 2019 - 14 Jul 2021 (University Malaya)
  • CREST GaN-on-GaN Oversight Committee Member
    22 Jan 2015 - 31 Dec 2020 (National)
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya
    14 Mar 2019 - 13 Mar 2020 (Department of Physics, Faculty of Science)
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya
    20 Apr 2017 - 31 Dec 2018 (Department of Physics, Faculty of Science)
  • Penyelaras Seminar Pascasiswazah (Candidature Defense) untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya.
    27 Aug 2013 - 31 Dec 2013 (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2012/2013
    09 Feb 2012 - 31 Dec 2013 (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2013/2014
    05 Nov 2012 - 04 Nov 2013 (Department of Physics, Faculty of Science)
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "Cadangan Mengubahsuai dan Menaiktaraf Bangunan AMCAL Termasuk Kerja-Kerja Sivil, Mekanikal dan Elektrikal untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya".
    15 Aug 2012 - 21 Jan 2013 (University Malaya)
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "To Supply, Deliver, Install and Commission of Spare Parts, Maintenance and Consumables for Hydrogen Refueling System" untuk Projek Penyelidikan HIR-MOHE, Fakulti Kejuruteraan, Universiti Malaya.
    06 Aug 2012 - 31 Dec 2012 (University Malaya)

MEMBERSHIPS


  • AHLI BERSEKUTU MAJLIS PROFESOR NEGARA, MEMBER
    Since 2022 (National)
  • PELANTIKAN AHLI JAWATANKUASA MASS CHAPTER UM: AJK KERJA (MASS UM - WORK COMMITTEE), MEMBER
    2022 to 2023 (National)
  • INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE), MEMBER
    2011 to 2020 (International)

AWARD AND STEWARDSHIP


  • Anugerah Cemerlang Universiti Malaya 2022 (Universiti Malaya Excellence Awards 2022)
    Universiti Malaya, 2023 (University)
  • Reviewer for Ceramics International
    Editor Ceramics International, 2020 (International)
  • Pelantikan Sebagai Penyelaras Kluster Kursus Student Holistic Empowerment (SHE) (Cluster Coordinator for Student Holistic Empowerment (SHE) Course)
    University of Malaya, 2019 (University)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member)
    University of Malaya, 2019 (University)
  • Reviewer for Ceramics International
    Ceramics International, 2019 (International)
  • Reviewer for Materials Letters
    Editor Materials Letters, 2018 (International)
  • Equipment Donation from OSRAM to LDMRC & PRC University of Malaya
    OSRAM Opto Semiconductors Sdn Bhd, 2017 (National)
  • Reviewer for Applied Surface Science
    Applied Surface Science, 2015 (International)
  • Who's Who in The World 2011
    Marquis Who's Who LLC, 2010 (International)

PUBLICATIONS


Article in Journal
WoS
  1. Abd Samad, Muhammad Izzuddin; Noor, Mimiwaty Mohd; Nayan, Nafarizal; Abu Bakar, Ahmad Shuhaimi; Mansor, Marwan; Zuhdi, Ahmad Wafi Mahmood; Hamzah, Azrul Azlan; Latif, Rhonira (2023). Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films, SCRIPTA MATERIALIA. 226. doi:10.1016/j.scriptamat.2022.115228
  2. Hisyam, Muhammad Iznul; Norhaniza, Rizuan; Shuhaimi, Ahmad; Mansor, Marwan; Williams, Adam; Hussin, Mohd Rofei Mat (2023). Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate., SURFACES AND INTERFACES. 40. doi:10.1016/j.surfin.2023.103041
  3. Mansor, Marwan; Norhaniza, Rizuan; Shuhaimi, Ahmad; Hisyam, Muhammad Iznul; Omar, Al-Zuhairi; Williams, Adam; Mat Hussin, Mohd Rofei (2023). Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer, SCIENTIFIC REPORTS. 13(1). doi:10.1038/s41598-023-35677-5
  4. Tan, Gary; Abu Bakar, Ahmad Shuhaimi; Ooi, Chong Seng; Al-Zuhairi, Omar; Wong, Yew Hoong; Abd Majid, Wan Haliza (2023). The effect of ammonia partial pressure on the growth of semipolar (11-22) InGaN/GaN MQWs and LED structures, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 291. doi:10.1016/j.mseb.2023.116368
  5. Al-Zuhairi, Omar; Shuhaimi, Ahmad; Nayan, Nafarizal; Azman, Adreen; Kamarudzaman, Anas; Alobaidi, Omar; Ghanim, Mustafa; Abdullah, Estabraq T.; Zhu, Yong (2022). Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review, COATINGS. 12(2). doi:10.3390/coatings12020275
  6. Azman, Zulkifli; Nayan, Nafarizal; Hasnan, Megat Muhammad Lkhsan Megat; Abu Bakar, Ahmad Shuhaimi; Mamat, Mohamad Hafiz; Yusop, Mohd Zamri Mohd (2022). Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY. 19(2-5), 404-417. doi:10.1504/IJNT.2022.124519
  7. Bakri, A. S.; Nafarizal, N.; Abu Bakar, A. S.; Hasnan, M. M. I. Megat; Raship, N. A.; Omar, W. I. Wan; Azman, Z.; Ali, R. A. Mohamed; Abd Majid, W. H.; Ahmad, M. K.; Aldalbahi, A. (2022). Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. . doi:10.1007/s10854-022-08186-w
  8. Ooi, Chong Seng; Shuhaimi, Ahmad; Tan, Gary; Al-Zuhairi, Omar; Abd Majid, Wan Haliza (2022). Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112 over bar 2) GaN: Crystal Quality and Surface Morphology Study, CRYSTALS. 12(2). doi:10.3390/cryst12020247
  9. Tan, Gary; Shuhaimi, Ahmad; Norhaniza, Rizuan; Zahir, Norhilmi; Low, Yan Jie; Wong, Yew Hoong; Abd Majid, Wan Haliza (2022). Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11-22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT), PHOTONICS. 9(9). doi:10.3390/photonics9090646
  10. Abd Rahman, M. N., Shuhaimi, A., Khudus, M., Anuar, A., Zainorin, M. Z., Talik, N. A., . . . Abd Majid, W. H. (2021). Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD. Journal of Electronic Materials, 50(4), 2313-2322. doi: 10.1007/s11664-021-08768-0
  11. Abd Rahman, M. N., Shuhaimi, A., Seng, O. C., Tan, G., Anuar, A., Talik, N. A., . . . Abd Majid, W. H. (2021). The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science-Materials in Electronics, 32(3), 3211-3221. doi: 10.1007/s10854-020-05070-3
  12. Azman, A., Kamarundzaman, A., Abu Bakar, A. S., & Abd Majid, W. H. (2021). The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, 131, 12. doi: 10.1016/j.mssp.2021.105836
  13. Azman, Z., Nayan, N., Hasnan, M., Othman, N., Bakri, A. S., Abu Bakar, A. S., . . . Yusop, M. Z. M. (2021). Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38(3), 86-92. doi: 10.1108/mi-02-2021-0013
  14. Bakri, A. S., Nayan, N., Soon, C. F., Ahmad, M. K., Abu Bakar, A. S., Abd Majid, W. H., & Raship, N. A. (2021). Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma. Microelectronics International, 38(3), 99-104. doi: 10.1108/mi-02-2021-0015
  15. Hussin, H. N., Talik, N. A., Abd Rahman, M. N., Mahat, M. R., Poopalan, P., Shuhaimi, A., & Abd Majid, W. H. (2021). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, 121, 8. doi: 10.1016/j.mssp.2020.105431
  16. Kamarundzaman, A., Abu Bakar, A. S., Azman, A., Omar, A. Z., Talik, N. A., Supangat, A., & Abd Majid, W. H. (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN. Scientific reports, 11(1), 13. doi: 10.1038/s41598-021-89201-8
  17. Makinudin, A. H. A., Al-Zuhairi, O., Anuar, A., Zainorin, M. Z., Bakar, A. S. A., DenBaars, S., & Supangat, A. (2021). Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector. Materials Letters, 286, 5. doi: 10.1016/j.matlet.2020.129244
  18. Makinudin, A. H. A., Omar, A., Abu Bakar, A. S., Anuar, A., & Supangat, A. (2021). Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720, 6. doi: 10.1016/j.tsf.2020.138489
  19. Rais, S. A. A., Hassan, Z., Abu Bakar, A. S., Abd Rahman, M. N., Yusuf, Y., Taib, M. I. M., . . . Shoji, D. (2021). Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11(3), 926-935. doi: 10.1364/ome.413417
  20. Samsudin, M. E. A., Yusuf, Y., Zainal, N., Abu Bakar, A. S., Zollner, C., Iza, M., & DenBaars, S. P. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38(3), 113-118. doi: 10.1108/mi-02-2021-0012
  21. Zahir, N., Talik, N. A., Harun, H. N., Kamarundzaman, A., Tunmee, S., Nakajima, H., . . . Majid, W. H. A. (2021). Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540, 12. doi: 10.1016/j.apsusc.2020.148406
  22. Abd Rahman, M. N., Yusuf, Y., Anuar, A., Mahat, M. R., Chanlek, N., Talik, N. A., . . . Shuhaimi, A. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 22(19), 3309-3321. doi: 10.1039/d0ce00113a
  23. Anuar, A., Makinudin, A. H. A., Al-Zuhairi, O., Abu Bakar, A. S., Supangat, A. (2020). Crystal quality and surface structure tuning of semi-polar (11-22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films, 697, 7. doi: 10.1016/j.tsf.2020.137817
  24. Anuar, A., Makinudin, A. H. A., Al-Zuhairi, O., Chanlek, N., Abu Bakar, A. S., Supangat, A. (2020). Growth of semi-polar (11(2)over-bar2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SHAT) method. Vacuum, 174, 8. doi: 10.1016/j.vacuum.2020.109208
  25. Kamarudzaman, A., Bin Abu Bakar, A. S., Azman, A., Omar, A. Z., Supangat, A., Talik, N. A. (2020). Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, 105, 8. doi:10.1016/j.mssp.2019.104700
  26. Mahat, M. R., Talik, N. A., Abd Rahman, M. N., Anuar, M. A., Allif, K., Azman, A., . . . Abd Majid, W. H. (2020). Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106, 7. doi:10.1016/j.mssp.2019.104757
  27. Nizamani, B., Jafry, A. A. A., Khudus, M., Memon, F. A., Shuhaimi, A., Kasim, N., . . . Harun, S. W. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser. Optics and Laser Technology, 124, 6. doi: 10.1016/j.optlastec.2019.105998
  28. Nizamani, B., Jafry, A. A. A., Khudus, M., Rosol, A. H. A., Samsamnun, F. S. M., Kasim, N., . . . Harun, S. W. (2020). Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide. Optical Fiber Technology, 55, 5. doi: 10.1016/j.yofte.2019.102124
  29. Nizamani, B., Salam, S., Jafry, A. A. A., Zahir, N. M., Jurami, N., Khudus, M., . . . Harun, S. W. (2020). Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*. Chinese Physics Letters, 37(5), 4. doi: 10.1088/0256-307x/37/5/054202
  30. Samsamnun, F. S. M., Zulkipli, N. F., Khudus, M., Shuhaimi, A., Majid, W. H. A., Harun, S. W. (2020). Alq(3) saturable absorber for generating Q-switched pulses in erbium-doped fiber laser. Microwave and Optical Technology Letters, 62(3), 1028-1032. doi: 10.1002/mop.32178
  31. Samsamnun, F. S. M., Zulkipli, N. F., Majid, W. H. A., Khudus, M., Shuhaimi, A., Rosol, A. H. A., . . . Harun, S. W. (2020). MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications. Journal of Modern Optics, 67(8), 746-753. doi: 10.1080/09500340.2020.1769762
  32. Samsamnun, F. S. M., Zulkipli, N. F., Sarjidan, M. A. M., Harun, S. W., Majid, W. H. A., Khudus, M., . . . Yasin, M. (2020). Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 7. doi: 10.1016/j.yofte.2019.102073
  33. Zainal, N., Samsudin, M. E. A., Taib, M. I. M., Ahmad, M. A., & Shuhaimi, A. (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures, 148, 6. doi: 10.1016/j.spmi.2020.106722
  34. Abd Rahman, M. N., Sulaiman, A. F., Khudus, M., Allif, K., Talik, N. A., Basri, S. H., Shuhaimi, A. (2019). Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58, 4. doi:10.7567/1347-4065/ab09d3
  35. Makinudin, A. H. A., Omar, A. Z., Anuar, A., Abu Bakar, A. S., DenBaars, S. P., Supangat, A. (2019). Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template. Crystal Growth Design, 19(11), 6092-6099. doi:10.1021/acs.cgd.9b00206
  36. Najwa, S., Shuhaimi, A., Talik, N. A., Ameera, N., Sobri, M., Rusop, M. (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science, 479, 1220-1225. doi:10.1016/j.apsusc.2019.01.123
  37. Sarjidan, M. A. M., Shuhaimi, A., Abd Majid, W. H. (2019). Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode. Journal of Nanoscience and Nanotechnology, 19(11), 6995-7003. doi:10.1166/jnn.2019.16724
  38. Taib, M. I. M., Munirah, N., Waheeda, S. N., Shuhaimi, A., Sabki, S. N., Zainal, N. (2019). Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template. Journal of Electronic Materials, 48(6), 3547-3553. doi:10.1007/s11664-019-07107-8
  39. Taib, M. I. M., Samsudin, M. E. A., Alias, E. A., Waheeda, S. N., Ibrahim, N., Shuhaimi, A., Zainal, N. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, 6(8), 11. doi:10.1088/2053-1591/ab1dd4
  40. Abd Rahman, M. N., Shuhaimi, A., Yusuf, Y., Li, H. J., Sulaiman, A. F., Samsudin, M. E. A., . . . Khudus, M. (2018). Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120, 319-326. doi:10.1016/j.spmi.2018.05.024
  41. Ali, A. H., Hassan, Z., Shuhaimi, A. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, 443, 544-547. doi:10.1016/j.apsusc.2018.03.024
  42. Rahman, M. N. A., Yusuf, Y., Mansor, M., Shuhaimi, A. (2016). Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD, Applied Surface Science. 362(572-576), Article
Scopus
  1. Hisyam M.I., Norhaniza R., Shuhaimi A., Mansor M., Williams A., Hussin M.R.M. (2023). Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate., Surfaces and Interfaces. 40. doi:10.1016/j.surfin.2023.103041
  2. Mansor M., Norhaniza R., Shuhaimi A., Hisyam M.I., Omar A.-Z., Williams A., Mat Hussin M.R. (2023). Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer, Scientific Reports. 13(1). doi:10.1038/s41598-023-35677-5
Others
  1. Al-Zuhairi Omar, Abdullah Haaziq Ahmad Makinudin, Ahmad Shuhaimi, AfiqAnuar, Anas Kamarudzaman, Najwa Surani, Azzuliani Supangat. (2021). Enhanced Indium Adsorption and Surface Evolution of Semi-Polar (11-22) LED via a Strain Periodic Alternating Superlattice (SPAS-L). Materials Today Communications, in-press, 102441.
  2. Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat & Wan Haliza Abd Majid. (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a plane GaN. Scientific Reports, Volume 11, Article 9724 (2021).
  3. Hussin, Hayatun Najihah, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Mahat, Mohd Raqif, Poopalan, Prabakaran, Shuhaimi, Ahmad, Abd Majid, Wan Haliza. (2020). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, January 2021, 121.
  4. Samsudin, Muhammad Esmed Alif; Yusuf, Yusnizam ; Christian, Zollner; MIchael, Iza; DenBaars, Steven; Abu Bakar, Ahmad Shuhaimi; and Zainal, Norzaini. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN based UVC LED. Microelectronics International, accepted.
  5. Afiq Anuar, Abdullah Haaziq Ahmad Makinudin, Omar Al-Zuhairi, Narong Chanlek, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method. Vacuum 174, 109208 (2020).
  6. Afiq Anuar, Abdullah Haaziq, Ahmad Makinudin, Omar Al-Zuhairi, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Crystal quality and surface structure tuning of semi-polar (11 22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films 697, 137817 (2020).
  7. B. Nizamani, A.A.A. Jafry, M.I.M. Abdul Khudus, F.A. Memon, A. Shuhaimi, N. Kasim, E. Hanafi, M. Yasin, S.W. Harun. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q switched erbium-doped fiber laser. Optics & Laser Technology, 124, 105998 (2020).
  8. F.S.M. Samsamnun, N.F. Zulkipli, M.A.M. Sarjidan, S.W. Harun, W.H.A. Majid, M.I.M.A. Khudus, A. Shuhaimi, A.H.A. Rosol, M.F.M. Rusdi, A.A.A. Jafry, M. Yasin. (2019) Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 102073 (2020).
  9. Farina S. M. Samsamnun, Nur F. Zulkipli, Muhammad I. M. A. Khudus, Ahmad Shuhaimi, Wan H. A. Majid, Sulaiman W. Harun. 2019. Alq3 saturable absorber for generating Q switched pulses in erbium doped fiber laser. Microwave and Optical Technology Letters, Early View.
  10. Mohamad Raqif Mahat, Noor AzrinaTalik, Mohd Nazri Abd Rahman, Mohd Afiq Anuar, Kamarul Allif, Adreen Azman, Hideki Nakajima, Ahmad Shuhaimi, Wan Haliza Abd Majid. 2020. Electronic surface, optical and electrical properties of p GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, Volume 106, 104757 (2020).
  11. Mohd Nazri Abd Rahman, Yusnizam Yusuf, Afiq Anuar, Mohamad Raqif Mahat, Narong Chanlek, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Norzaini Zainal, Wan Haliza Abd Majid and Ahmad Shuhaimi. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 2020, Advance Article
  12. N. Zainal, M.E.A.Samsudin, M. Ikram Md Taib, M.A.Ahmad, A. Shuhaimi (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures 148, 106722 (2020).
  13. Abdullah Haaziq Ahmad Makinudin, Al-Zuhairi Omar, Afiq Anuar, Ahmad Shuhaimi Abu Bakar, Steven P. DenBaars, Azzuliani Supangat. 2019. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11 22) GaN Template, Crystal Growth & Design 19, 6092-6099 (2019).
  14. M Ikram Md Taib, M E A Samsudin, E A Alias, S N Waheeda, N Ibrahim, A Shuhaimi and N Zainal. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, Volume 6, Number 8.
  15. Rahman, M. N. A., Talik, N. A., Khudus, M. I. A., Sulaiman, A. F., Allif, K., Zahir, N. M., & Shuhaimi, A. (2019). Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm.
  16. S. Najwa, A. Shuhaimi, N.A. Talik, N. Ameera, M. Sobri & M.Rusop (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science 479, 1220-1225.
  17. Adreen Azman, Ahmad Shuhaimi, Al-Zuhairi Omar, Anas Kamarundzaman, Muhammad Imran Mustafa Abdul Khudus, Azharul Ariff, M.E.A. Samsudin, Norzaini Zainal, Saadah Abd Rahman. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, in-press.
  18. Ahmad Hadi Ali, Zainuriah Hassan, Ahmad Shuhaimi. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, Volume 443, Pages 544-547.
  19. Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman & AzzulianiSupangat. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, Volume 117, Pages 207-214.
  20. Al-Zuhairi Omar, Ahmad Shuhaimi, Abdullah Haaziq Ahmad Makinudin, Muhammad I.M. Abdul Khudus, Azzuliani Supangat. (2018). Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing 86, 1 November 2018, Pages 1 7.
  21. Mohd Nazri Abd. Rahman, Ahmad Shuhaimi, Yusnizam Yusuf, Hongjian Li, Abdullah Fadil Sulaiman, Muhammad Esmed Alif Samsudin, Norzaini Zainal, Muhammad I.M. Abdul Khudus. 2018. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures 120, 319-326.
  22. P.C. Sivanathan, Ahmad Shuhaimi, Hebal Hamza,Stacy J. Kowsz, Muhammad I.M. Abdul Khudus, Hongjian Li, Kamarul Allif. 2018. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD. Superlattices and Microstructures, In Press, Accepted.
  23. Ganesh, V., Alizadeh, M., Shuhaimi, A., Adreen, A., Pandikumar, A., Jayakumar, M., Huang, N.M., Ramesh, R., Baskar, K., and Rahman S.A. (2017). Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. Journal of Alloys and Compounds 706 (2017) 629-636.
  24. Hasan, S.W., Said, S.M., Bakar, A.S.B.A. et al. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells. Journal of Materials Science, (2017), pp 1-11.
  25. K H Tan, H A Tajuddin, R A Ahmad, A Suhaimy, M R Johan , Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties, Optik
  26. Amina Benzina, Abdelhadi Lachebi, Ahmad Shuhaimi, Saadah Abdul Rahman, Hamza Abid. 2016. First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke Johnson (mBJ) exchange potential. Optik. In Press, Accepted Manuscript.
  27. Hasan, S. W., Said, S. M., Sabri, M. F. M., Bakar, A. S. A., Hashim, N. A., Hasnan, M. M. I. M., Pringle, J. M. & MacFarlane, D. R. (2016). High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane. Scientific reports, 6(29328), 1-11.
  28. Ameera, N., Shuhaimi, A., Surani, N., Rusop, M., Hakim, M., Mamat, M. H., Mansor, M., Sobri, M., Ganesh, V., Yusuf, Y. 2015. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode Ceramics International. (Tier 1, Impact Factor = 2.605)
  29. Annuar NZM, Sabri MFM & Bakar ASA. 2014. Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber. Microsyst Technol, 21(1), 309-318 (2015)
  30. Azarang, M., Shuhaimi, A., Sookhakian, M. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration Rsc Advances. (Tier 1, Impact Factor = 3.840)
  31. Azarang, M., Shuhaimi, A., Yousefi, R., Jahromi, S. P. 2015. One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue Rsc Advances. (Tier 1, Impact Factor = 3.840)
  32. Azimah, E., Zainal, N., Shuhaimi, A., Hassan, Z. 2015. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN Superlattices and Microstructures. (Tier 2, Impact Factor = 2.097)
  33. E. Azimah, N. Zainal, A. Shuhaimi & Z. Hassan. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. Superlattices and Microstructures 82 (2015) 592-598.
  34. Ganesh, V., Alizadeh, M., Shuhaimi, A., Pandikumar, A., Goh, B. T., Huang, N. M., Rahman, S. A. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation Rsc Advances. (Tier 1, Impact Factor = 3.840)
  35. M. Alizadeh, V. Ganesh, H. Mehdipour, N.F.F Nazarudin, B.T. Goh, A. Shuhaimi, S.A. Rahman. 2015. Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation. Journal of Alloys and Compounds 632 (2015) 741-747.
  36. Majid Azarang, Ahmad Shuhaimi & Mehran Sookhakian. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration. RSC Advances. Accepted.
  37. Vattikondala Ganesh, Mahdi Alizadeh, Ahamad Shuhaimi, Alagarsamy Pandikumar, Boon Tong Goh, Nay Ming Huang, and Saadah Abdul Rahman. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation. RSC Advances 5: 17325-17335.
  38. Ahmad Hadi Ali, Ahmad Shuhaimi & Zainuriah Hassan. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes. Applied Surface Science 288: 599-603.
  39. Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar & Zainuriah Hassan. 2014. Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science 315 (2014) 387-391.
  40. Ali, A. H., Abu Bakar, A. S., Hassan, Z. 2014. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer Applied Surface Science. (Tier 1, Impact Factor = 2.538)
  41. Ali, A. H., Shuhaimi, A., Hassan, Z. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes Applied Surface Science. (Tier 1, Impact Factor = 2.538)
  42. Azarang, M., Shuhaimi, A., Yousefi, R., Golsheikh, A. M., Sookhakian, M. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB Ceramics International. (Tier 1, Impact Factor = 2.086)
  43. M. Alizadeh, H. Mehdipour, V. Ganesh, A. N. Ameera, B. T. Goh, A. Shuhaimi, S. A. Rahman. 2014. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films. Applied Physics A: Materials Science & Processing s00339-014-8649-z (2014).
  44. M. Sobri, A. Shuhaimi, K.M. Hakim, V. Ganesh, M.H. Mamat, M. Mazwan, S. Najwa, N. Ameera, Y. Yusnizam & M. Rusop. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering. Superlattices and Microstructures 70: 82-90.
  45. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, A. Moradi Golsheikh, M. Sookhakian. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB. Ceramics International 40 (2014) 10217-10221.
  46. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014).
  47. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M. Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014).
  48. N. Ameera, A. Shuhaimi, S. Najwa, M. Rusop, K.M. Hakim, M.H. Mamat, M. Mazwan, M. Sobri, V. Ganesh & Y. Yusnizam. 2014. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode. Ceramics International. Accepted (2014).
  49. N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, A. Shuhaimi Abu Bakar. 2014. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber. Microsystem Technologies 20.
  50. Najwa, S., Shuhaimi, A., Ameera, N., Hakim, K. M., Sobri, M., Mazwan, M., Mamat, M. H., Yusnizam, Y., Ganesh, V., Rusop, M. 2014. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979)
  51. S. NAJWA, A. SHUHAIMI, N. AMEERA, K. M. HAKIM, M. SOBRI, M. MAZWAN, M. Z. MUSA, M. H. MAMAT & M. RUSOP. 2014. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering. Advanced Materials Research 895: 12-16.
  52. S. Najwa, A. Shuhaimi, N. Ameera, K. M. Hakim, M. Sobri, M. Mazwan, M. H. Mamat, Y. Yusnizam, V. Ganesh & M. Rusop. 2014. The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering. Superlattices and Microstructures 72 (2014) 140-147.
  53. Sobri, M., Shuhaimi, A., Hakim, K. M., Ganesh, V., Mamat, M. H., Mazwan, M., Najwa, S., Ameera, N., Yusnizam, Y., Rusop, M. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979)
  54. Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar, Takashi Egawa & Zainuriah Hassan. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer. Superlattices and Microstructures 60: 201 207.
  55. Ahmad Hadi Ali, Ahmad Shuhaimi, Zainuriah Hassan & Yushamdan Yusof. 2013. Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x- ray diffraction. Advanced Materials Research 620: 22- 27.
  56. Ali, A. H., Abu Bakar, A. S., Egawa, T., Hassan, Z. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer Superlattices and Microstructures. (Tier 2, Impact Factor = 1.564)
  57. E. Azimah, N. Zainal, Z. Hassan, A. Shuhaimi & Azlan Bahrin. 2013. Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research 620: 453-457.
  58. N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, & A. Shuhaimi Abu Bakar. 2013. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor. Advanced Materials Research 626: 396-400.
  59. NZM Annuar, MFM Sabri. ASA Bakar, Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor, Advanced Material Research, vol. 626 (2013), 396-400
  60. Zurianti A. Rahman, Khaulah Sulaiman, Mohamad Rusop & Ahmad Shuhaimi. 2013. A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device. Advanced Materials Research 667: 165-171.
  61. Rahman, Z. A., Sulaiman, K., Shuhaimi, A., Rusop, M. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell 
  62. Zurianti A. Rahman, Khaulah Sulaiman, Ahmad Shuhaimi, Mohamad Rusop. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell. Advanced Materials Research 501: 252-256.
  63. Shuhaimi, A. & Egawa, T. 2011. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD. AIP Conf. Proc. 1328: 232-234.
  64. Shuhaimi, A., Hassan, Z. & Egawa, T. 2011. InGaN-based blue LED grown on Si(111) substrate. IEEE RSM2011 Proc. 6088279:6-8.
  65. Bin Abu Bakar Ahmad Shuhaimi, Arata Watanabe, and Takashi Egawa, Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-based Multi- Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer, Jpn. J. Appl. Phys. 49 (2010) 021002.
  66. Takashi Egawa and Bin Abu Bakar Ahmad Shuhaimi, High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD, J. Phys. D: Appl. Phys. 43, 354008 (2010).
  67. Bin Abu Bakar Ahmad Shuhaimi , Hiroyuki Kawato, Youhua Zhu and Takashi Egawa, Growth of InGaN-based laser diode structure on silicon (111) substrate, Journal of Physics: Conference Series 152 (2009) 012007.
  68. Bin Abu Bakar Ahmad Shuhaimi, Pum Chian Khai, Takaaki Suzue, Yukiyasu Nomura and Takashi Egawa, Characterization and Fabrication of InGaN-based blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate, Mater. Res. Soc. Symp. Proc. 1167 (2009) O04-01.
  69. Bin Abu Bakar Ahmad Shuhaimi, Takaaki Suzue, Yukiyasu Nomura, Yoshinori Maki and Takashi Egawa, Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer, Mater. Res. Soc. Symp. Proc. 1167 (2009) O02-05.

RESEARCH PROJECT


National
  1. 2021 - 2025, MOSTI-Funding
    High Efficiency High Electron Mobility Transistor (hemt) For Power Electronics Modules ( Principal Investigator(PI))
  2. 2014 - 2016, RACE Grant
    Nanostructure Evolution of ZnO Thin Films Incorporated with Nanorod Layers: The Amelioration of Highly c-Axis Oriented for the Growth of Defect Free Film ( Consultant)
  3. 2011 - 2015, MOHE
    Synthesis and Application of Low Dimensional Materials ( Consultant)
  4. 2013 - 2015, Postgraduate Research Grant(PPP)
    Investigation of Morphological Structural and Optical Properties of ZnO nanostructures ( Coordinator)
  5. 2013 - 2015, Exploratory Research Grant Scheme (ERGS)
    Producing high quality cubic GaN using porous GaAs substrate for high efficient devices. ( Consultant)
  6. 2011 - 2014, Geran Penyelidikan Universiti Malaya (UMRG)
    Development of Metal-Organic Halide Vapor Phase Epitaxy (MOHVPE) for Growth of Galium Nitride (GaN) ( Co-Inventor)
  7. 2012 - 2014, APEX Delivering Excellence Grant (DE2012)
    Development of AlGaN/GaN strained-layer superlattice stack structure for high energy-efficient and cost-effective lnGaN based LEDs ( Consultant)
  8. 2012 - 2014, Geran Universiti Penyelidikan (RU) Universiti Sains Malaysia (USM)
    Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices ( Consultant)
  9. 2011 - 2013, Exploratory Research Grant Scheme (ERGS)
    Investigation on Vapor Phase Epitaxy Processes for Growth of Nitride-based Wide Bandgap Semiconductor Thin-Films ( Co-Inventor)
  10. 2011 - 2013, Geran Penyelidikan Jangka Pendek Universiti Sains Malaysia (USM)
    Optical Study on III-Nitride Semiconductor Materials and Its Devices ( Consultant)
  11. 2012 - 2012, Geran Penyelidikan Universiti Malaya (UMRG)
    Probing Nano and Electronics Structures of Low Dimensional Semiconducting Materials ( Consultant)

CONSULTANCY PROJECT


  • Collaboration On Gan Power Devices, MIMOS Berhad
    01 Jan 2019 - 01 Jan 2021 (National)
  • Crest Gan-On-Gan Epitaxy Program Oversight Committee Member and Technical Committee Member, Collaborative Research in Engineering Science and Technology (CREST)
    01 Dec 2015 - 01 Dec 2020 (National)
  • Due Diligence for Potential Collaboration in Gallium Nitride Power Devices, Collaborative Research in Engineering, Science and Technology (CREST)
    01 Jan 2019 - 01 Jan 2019 (International)
  • Technical Due Diligence for Crest-Ucsb Gan-On-Gan Project, Collaborative Research in Engineering, Science & Technology (CREST)
    01 Jan 2014 - 01 Jan 2014 (International)
  • Crest Gan-On-Gan Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST)
    01 Jan 2014 - 01 Jan 2014 (National)

PAPER PRESENTED


INVITED SPEAKER
  1. High-Quality GaN on Silicon Using Aluminum Nitride Pulsed-Atomic Layer Epitaxy Inserted Buffer, 3rd International Conference on Semiconductor Materials and Technology (3rd ICoSeMT 2023), Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM) (International) (18 Sep 2023 - 19 Sep 2023)
  2. Enhanced Indium Adsorption for Longer Wavelength Luminescence of Semi-Polar (11-22) Cyan LED with Utilization of Strain Periodic Alternating Multi-Layer (SPAM-L), 1ST INTERNATIONAL CONFERENCE ON SUSTAINABLE ENVIRONMENTAL TECHNOLOGY 2019 (ISET2019), Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia (UTM), Malaysia (International) (20 Oct 2019 - 22 Oct 2019)
  3. Improvement of InGaN-based LEDs on Si(111) Substrate by AlGaN/GaN Strained-Layer Superlattices (SLS) Underlayer, Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore. (International) (18 Oct 2010 - 18 Oct 2010)
ORAL PRESENTER
  1. ZnO-based Current Spreading Layer for Nitride Blue Light Color LED, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  2. Effect of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  3. Effects of DC Power Magnetron Sputtering on Aluminium Nitride (AlN) Thin Film, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  4. Effects of DC power magnetron sputtering on Aluminium Nitride (AIN) thin film, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National) (28 Feb 2014 - 02 Mar 2014)
  5. Influence of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National) (28 Feb 2014 - 02 Mar 2014)
  6. InGaN-based Blue LED Grown on Si(111) Substrate , IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM) 2011, IEEE Electron Device Society (International) (28 Sep 2011 - 29 Sep 2011)
  7. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD , National Conference on Physics 2010 / Persidangan Fizik Kebangsaan (PERFIK) 2010, Multimedia University (MMU), Malaysia. (National) (28 Oct 2010 - 30 Oct 2010)
  8. Enhancement of InGaN-based MQW grown on Si(111) substrate by underlying AlGaN/GaN SLS cladding layer , MRS Spring Meeting, San Francisco, USA, Materials Research Society (MRS) (International) (13 Apr 2009 - 17 Apr 2009)
POSTER PRESENTER
  1. The effect of AlN multilayer (ML) growth rate on the growth of semipolar (11-22) InGaN/GaN LED, 14th International Conference on Nitride Semiconductors (ICNS-14), The Japanese Association for Crystal Growth (International) (12 Nov 2023 - 17 Nov 2023)
  2. Growth of high quality GaN on Si (111) substrate employing pulse atomic layer epitaxy (PALE) AlN buffer layer, The 14th International Conference on Nitride Semiconductors (ICNS-14), The Japan Association of Crystal Growth (International) (12 Nov 2023 - 17 Nov 2023)
  3. Characterization and fabrication of InGaN-based blue LED with underlyingAlGaN/GaN SLS cladding layer grown on Si(111) Substrate, MRS Spring Meeting, San Francisco, USA, Materials Research Society (MRS) (International) (13 Apr 2009 - 17 Apr 2009)
  4. Growth of InGaN-based laser diode structure on silicon (111) subtrate, MRS International Materials Research Conference, Chongqing, China, Materials Research Society (MRS) (International) (09 Jun 2008 - 12 Jun 2008)

ACADEMIC/PROF. SERVICES


Evaluation
  1. (2024) External Reviewer for Phd Thesis "Enhancement of Ito/Cr-Ag/Ito/N-Si (Icai) and Ito/Mo-Ag/Ito/P-Si (Imai) Transparent Conductive Window Using Laser Annealing Treatment for Solar Cell Applications", National, (Internal Examiner)
  2. (2022) Pelantikan Sebagai Panel Untuk Sesi Proposal Defence: Muhammad Shahrul Arif Bin Adi Rumi (17099008/3), University, (Internal Examiner)
  3. (2019) External examiner for University Tun Hussein Onn Malaysia (UTHM) MSc candidate BIBI ZULAIKHA BINTI BHARI with the title of "Investigation of Buffer Layer for Ag/Si Metal-Semiconductor Contacts", (External Examiner)
  4. (2019) External examiner for University Technology Malaysia (UTM) MSc candidate NUR FARHANA BINTI HASMUNI with the thesis title of "Structure and Properties of Conductive Graphene CNTs-Polymer Composites", (External Examiner)
  5. (2019) Reviewer for Ceramics International, (Reviewer)
Contribution to external organisation
  1. (2019) Interview Panel for MyBrainSc Scholarship 2019 , Ministry of Education Malaysia
  2. (2019) Colloquium Nanotechnology Gallium Nitride, Terahertz and Flexible Electronics 2019 (Kolokium Nanoteknologi GaN, Terahertz dan Flexible Electronics 2019), National Nanotechnolgy Centre (NNC), MESTECC
  3. (2018) Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp , Collaborative Research in Engineering, Science and Technology (CREST)
  4. (2016) Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center
  5. (2016) Guest Speaker for CREST Semiconductor & Optoelectronic CLuster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center
  6. (2016) Advisory Committee for 3rd Malaysia Nitrides Research Group 2016, Malaysia Nitrides Research Group (MNRG)
  7. (2014) Research Acculturation Collaborative Effort (RACE) [600-RMI/RACE 16/6/2(9/2013)], Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), National
  8. (2014) Member of GaN-on-GaN Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST)
  9. (2014) Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Collaborative Research in Engineering, Science & Technology (CREST)
  10. (2013) Exploratory Research Grant Scheme (ERGS) Phase 1 / 2013 [203/PFIZIK/6730095], School of Physics, Universiti Sains Malaysia (USM), National
Mentoring
  1. (2023) Penyelia Kursus Penulisan Ilmiah (Six3001) Semester 2, Sesi 2022/2023, University, (Mentor)

SUPERVISION


Postgraduate Student
PhD/ Doctoral
  1. (2021) GROWTH AND PROPERTIES OF POLAR AND NON-POLAR InGaN/GaN LEDS ON PATTERNED AND M-PLANE SAPPHIRE SUBSTRATES, MOHD ADREEN SHAH BIN AZMAN SHAH
  2. (2021) GROWTH OF NON-POLAR (11-20) A-PLANE GaN BASED LEDS ON (1-120) R-PLANE SAPPHIRE SUBSTRATES VIA MOCVD, ANAS BIN KAMARUNDZAMAN
  3. (2020) HIGH QUALITY SINGLE-CRYSTALLINE ALUMINIUM NITRIDE GROWN USING PULSED ATOMIC-LAYER EPITAXY TECHNIQUE BY MOCVD ON SAPPHIRE SUBSTRATE, MOHD NAZRI BIN ABD. RAHMAN
  4. (2020) EPITAXIAL GROWTH OF SEMI-POLAR (11-22) GALLIUM NITRIDE FOR UV PHOTOSENSING APPLICATION, ABDULLAH HAAZIQ BIN AHMAD MAKINUDIN
  5. (2020) ORGANIC AND NON-ORGANIC SEMICONDUCTOR MATERIALS FOR PULSED FIBER LASER GENERATION IN 1.55-MICRON REGION, FARINA SAFFA BINTI MOHAMAD SAMSAMNUN
  6. (2019) SEMIPOLAR GAN ON FOREIGN SUBSTRATES VIA MOCVD FOR LED APPLICATIONS, ABDULLAH HAAZIQ BIN AHMAD MAKINUDIN
  7. (2018) DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, MOHD ARIF BIN MOHD SARJIDAN
  8. (2018) CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, OMAR AYAD FADHIL
  9. (2018) DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, MOHD ARIF BIN MOHD SARJIDAN
  10. (2018) CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, OMAR AYAD FADHIL
  11. (2016) Membrane inserted thermo-electrochemical generator for enhanced power generation, SYED WAQAR HASAN
  12. (2016) Membrane inserted thermo-electrochemical generator for enhanced power generation, SYED WAQAR HASAN
  13. (2015) ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, MAJID AZARANG
  14. (2015) ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, MAJID AZARANG
  15. (2013) STUDY OF THE EFFECT OF DOPING ON THE PHYSICAL PROPERTIES OF PEDOT: PSS FOR APPLICATIONS AS BUFFER LAYER IN ORGANIC SOLAR CELL AND AS P-TYPE MATERIAL IN THERMOELECTRIC DEVICE, ZURIANTI BINTI ABD RAHMAN
Master
  1. (2021) EFFECT OF GAS FLOW RATE AT FIXED V/III RATIO AND PRESSURE TOWARD SEMI-POLAR (112 ̅2) GALLIUM NITRIDE CRYSTALLOGRAPHIC AND SURFACE MORPHOLOGY, OOI CHONG SENG
  2. (2017) GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, SIVANATHAN A/L PARIASAMY @CHELLADURAI
  3. (2017) GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, SIVANATHAN A/L PARIASAMY @CHELLADURAI
  4. (2016) OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, YUSNIZAM BIN YUSUF
  5. (2016) OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, YUSNIZAM BIN YUSUF
  6. (2014) THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, NAJWA BINTI SURANI
  7. (2014) NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, NUR AMEERA BT ANUAR
  8. (2014) INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, MAZWAN BIN MANSOR
  9. (2014) EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, MOHD SOBRI BIN ABD RAZAK
  10. (2014) INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, MAZWAN BIN MANSOR
  11. (2014) THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, NAJWA BINTI SURANI
  12. (2014) EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, MOHD SOBRI BIN ABD RAZAK
  13. (2014) NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, NUR AMEERA BT ANUAR
  14. (2012) MODELING AND SIMULATION OF METAL ORGANIC HALIDE VAPOR PHASE EPITAXY GROWH CHAMBER REACTOR, NURUL ZIEYANA MOHAMED ANNUAR

TEACHING


Master
  1. (2019) SQA7009 - Semiconductor Technology
  2. (2018) SMGS6341 - Semiconductor Device
  3. (2018) SQA7008 - Semiconductor Devices
  4. (2017) SMGS6341 - Semiconductor Device
  5. (2016) SMGS6341 - Semiconductor Device
  6. (2013) SMGS6341 - Semiconductor Device
  7. (2012) SMGS6341 - Semiconductor Device
Bachelor
  1. (2019) SIF2009 - Electronics Practical
  2. (2019) SIF2021 - Digital Electronics
  3. (2019) SMEB4302 - Advanced Materials Processing Technology
  4. (2018) SIF2009 - Electronics Practical
  5. (2018) SIF2020 - Electronics Ii
  6. (2018) SIF2021 - Digital Electronics
  7. (2018) SMEB3201 - Semiconductor Materials and Devices
  8. (2018) SMES3122 - Digital Electronics
  9. (2017) SIF2017 - Semiconductor Devices
  10. (2017) SIF2021 - Digital Electronics
  11. (2017) SMEB3201 - Semiconductor Materials and Devices
  12. (2017) SMES4321 - Semiconductor Devices
  13. (2016) SMES3122 - Digital Electronics
  14. (2015) SIF1006 - Practical Physics 1
  15. (2015) SMES3122 - Digital Electronics
  16. (2014) SMEB2203 - Optical Properties of Materials
  17. (2014) SMES1271 - Physics Practical
  18. (2013) SMEB2203 - Optical Properties of Materials
  19. (2013) SMES1271 - Physics Practical
  20. (2011) SMES2104 - Electronics
  21. (2011) SMES3122 - Digital Electronics
  22. (2011) SMES3171 - Microprocessor and Microcomputer Laboratory
  23. (2010) SMES3122 - Digital Electronics
  24. (2010) SMES3171 - Microprocessor and Microcomputer Laboratory

PATENT/IPR


  • METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE
    PATENT
  • A Method of Depositing Gallium Nitride on a substrate
    PATENT
  • Method Of Growing Semipolar Gallium Nitride Film
    PATENT
  • Method to fabricate semi-polar gallium nitride (11-22) on m-plane (1-100) using 1-step growth approach by MOCVD
    PATENT
  • METHOD FOR FORMING MONOLAYER OR MULTILAYER GRAPHENE
    PATENT
  • Method for forming monolayer or multilayer of graphene
    PATENT
  • METHOD FOR GROWING A SEMI - POLAR Publication Classification GALLIUM NITRIDE EPITAXIAL LAYER USING ALUMINUM NITRIDE / GALLIUM NITRIDE SUPERLATTICES
    Patent (International)
  • Method of Fabricating Zinc oxide as transparent conductive oxide layer
    PATENT
  • A METHOD OF PRODUCING TRANSPARENT NANOCOLUMNS AS CURRENT SPREADING LAYER
    PATENT
  • A method for transparent conductive oxide (TCO) layer with nanacolumn nickel/indium tin oxide (Ni/ITO) structures.
    PATENT
  • A method for uniform nanocolumnar transparent conducting oxide (TCO) layer made of pristine indium tin oxide (ITO).
    PATENT
  • Method of preparing nickel and indium tin oxide as transparent conductive oxide layer
    PATENT

SOCIAL RESPONSIBILITY ACTIVITIES


  • Pensyarah Pembimbing - Ldmrc Young Scientist Bootcamp During Minggu Sains Negara 2023, (26 Jul 2023 - 26 Jul 2023) (National)
  • Panel Penemuduga Bagi Kemasukan Ke Program Pengajian Peringkat Ijazah Sarjana Muda Ambilan Sesi Akademik 2022/2023, (13 Jul 2022 - 17 Jul 2022) (University)
  • Pelantikan Ahli Jawatankuasa Mass Chapter UM (AJK Kerja), (15 Feb 2022 - 14 Feb 2023) (National)
  • Website Committee for Malaysia National Physics Conference / Persidangan Fizik Kebangsaan (Perfik) 2016, (21 Dec 2016 - 22 Dec 2016)
  • Crest Gan-On-Gan Epitaxy Program Oversight Committee Member and Technical Committee Member, (22 Jan 2015 - 31 Dec 2020)
  • Organizing Committee Member for The "First Meeting of Malaysia Nitrides Research Group", 7 April 2014, Informm Auditorium Room, Universiti Sains Malaysia, Pulau Pinang, Malaysia., (07 Apr 2014 - 07 Apr 2014)
  • Panel Member for Value Management Lab of Gallium Nitride On Gallium Nitride (Gan-On-Gan) Project Initiative by Collaborative Research in Engineering, Science & Technology (Crest), 10-14 March 2014, Sains@Usm Building, Pulau Pinang, Malaysia., (10 Mar 2014 - 14 Mar 2014)
  • Head of Protocol Committee, International Conference On Solid State Science and Technology 2012, 18-20 December 2012, Melaka, Malaysia., (18 Dec 2012 - 20 Dec 2012)
  • President of Nagoya Institute of Technology Alumni Malaysia (Nitmaa), (28 Nov 2010)