Curriculum Vitae

ASSOCIATE PROF. DR. AHMAD SHUHAIMI BIN ABU BAKAR

Associate Professor
  • Department of Physics
    Faculty of Science
  • shuhaimi
  • 0379674206

BIOGRAPHY

Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya. He currently leads Nitride Semiconductor Laboratory which houses full spectrum of capabilities for epitaxy, fabrication and analysis of nitride-based optoelectronics and power devices, including Taiyo Nippon Sanso Corporation's SR2000 and SR5000 MOCVDs, PE-ALD, ICP, Metallization, Photolithography, HR-XRD, AFM, etc. He obtained many research grants provided by Ministry of Higher Education, CREST, etc as well as donation from local industries. His group is in active collaboration with several semiconductor manufacturers and other research institutes/laboratories in Malaysia and overseas. His group interest is epitaxy of polar and non-polar GaN on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.

ACADEMIC QUALIFICATION

  • D. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, (Engineering Physics, Electronics and Mechanics)
    Nagoya Institute of Technology
  • M. ENG., ENGINEERING PHYSICS, ELECTRONICS AND MECHANICS, (Engineering Physics, Electronics and Mechanics)
    Nagoya Institute of Technology
  • B. ENG. ELECTRICAL AND COMPUTER, (Electrical and Computer Engineering)
    Nagoya Institute of Technology

ADMINISTRATIVE DUTIES

  • Director
    17 Mar 2025 - present (Research Facilities Centre, Deputy Vice-chancellor (research and Innovation))
  • Coordinator for Post-Graduate Candidature Defence of Physics Department
    02 May 2011 - present (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2011/2012
    28 Feb 2011 - present (Department of Physics, Faculty of Science)
  • AJK Penubuhan Program Sains Bahan Dengan Indistri (Committee Member for the New Establishment of Materials Science with Industry Academic Program)
    04 Jan 2023 - 31 Dec 2024 (Department)
  • Committee Members
    01 Jan 2023 - 31 Dec 2024 (Department of Physics, Faculty of Science)
  • Ahli Task Force Khas Bagi Hala Tuju Penyelidikan Fakulti Sains 2023-2028 (Member of Special Task Force for Research Direction for the Faculty of Science 2023-2028)
    01 Feb 2023 - 03 Feb 2023 (Department of Physics, Faculty of Science)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (University of Malaya Commercialization Evaluation Committee Member)
    15 Jul 2019 - 14 Jul 2021 (University Malaya)
  • CREST GaN-on-GaN Oversight Committee Member
    22 Jan 2015 - 31 Dec 2020 (National)
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya
    14 Mar 2019 - 13 Mar 2020 (Department of Physics, Faculty of Science)
  • Industry Liaison Officer (ILO) for Faculty of Science, University of Malaya
    20 Apr 2017 - 31 Dec 2018 (Department of Physics, Faculty of Science)
  • Penyelaras Seminar Pascasiswazah (Candidature Defense) untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya.
    27 Aug 2013 - 31 Dec 2013 (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2012/2013
    09 Feb 2012 - 31 Dec 2013 (Department of Physics, Faculty of Science)
  • Wakil Institut/Jabatan ke Jawatankuasa Buku Panduan, Fakulti Sains, Sesi 2013/2014
    05 Nov 2012 - 04 Nov 2013 (Department of Physics, Faculty of Science)
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "Cadangan Mengubahsuai dan Menaiktaraf Bangunan AMCAL Termasuk Kerja-Kerja Sivil, Mekanikal dan Elektrikal untuk Jabatan Fizik, Fakulti Sains, Universiti Malaya".
    15 Aug 2012 - 21 Jan 2013 (University Malaya)
  • Ahli Jawatankuasa Penilaian Spesifikasi dan Teknikal bagi "To Supply, Deliver, Install and Commission of Spare Parts, Maintenance and Consumables for Hydrogen Refueling System" untuk Projek Penyelidikan HIR-MOHE, Fakulti Kejuruteraan, Universiti Malaya.
    06 Aug 2012 - 31 Dec 2012 (University Malaya)

MEMBERSHIPS

  • AHLI BERSEKUTU MAJLIS PROFESOR NEGARA, MEMBER
    Since 2022 (National)
  • PELANTIKAN AHLI JAWATANKUASA MASS CHAPTER UM: AJK KERJA (MASS UM - WORK COMMITTEE), MEMBER
    2022 to 2023 (National)
  • INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE), MEMBER
    2011 to 2020 (International)

AWARD AND STEWARDSHIP

  • Certificate of Excellent Service
    2025, Universiti Malaya
  • Certificate of Excellent Service
    2024, Universiti Malaya
  • Anugerah Cemerlang Universiti Malaya 2022 (universiti Malaya Excellence Awards 2022)
    2023, Universiti Malaya,  (University)
  • Reviewer for Ceramics International
    2020, Editor Ceramics International,  (International)
  • Pelantikan Sebagai Penyelaras Kluster Kursus Student Holistic Empowerment (she) (cluster Coordinator for Student Holistic Empowerment (she) Course)
    2019, University of Malaya,  (University)
  • Ahli Jawatankuasa Penilai Pengkomersilan Universiti Malaya (university of Malaya Commercialization Evaluation Committee Member)
    2019, University of Malaya,  (University)
  • Reviewer for Ceramics International
    2019, Ceramics International,  (International)
  • Reviewer for Materials Letters
    2018, Editor Materials Letters,  (International)
  • Equipment Donation from Osram to Ldmrc & Prc University of Malaya
    2017, OSRAM Opto Semiconductors Sdn Bhd,  (National)
  • Reviewer for Applied Surface Science
    2015, Applied Surface Science,  (International)
  • Who's Who in The World 2011
    2010, Marquis Who's Who LLC,  (International)

PUBLICATIONS

Article in Journal
WoS
  1. Abd Rahman, Mohd Nazri; Yusuf, Yusnizam; Zainal, Norzaini; Shuhaimi, Ahmad (2025). Enhanced stress relaxation of GaN epilayers on silicon (111) substrates with a unique AlN/GaN multilayer design, JOURNAL OF MATERIALS SCIENCE. 60(29), 12519-12528. doi:10.1007/s10853-025-10973-9
  2. Abd Samad, Muhammad Izzuddin; Badrudin, Syazwani Izrah; Mansor, Marwan; Nayan, Nafarizal; Abu Bakar, Ahmad Shuhaimi; Yusop, Mohd Zamri; Latif, Rhonira (2025). Thin film sputter-deposition of AlN crystals in oxygenated chamber: a pilot study, MATERIALS RESEARCH EXPRESS. 12(1). doi:10.1088/2053-1591/ad9b70
  3. Azhar, N. E. A.; Sulimai, N. H.; Salifairus, M. J.; Mamat, M. H.; Shariffudin, S. S.; Shuhaimi, A.; Malek, M. F.; Eswar, K. A.; Rusop, M. (2025). Manipulation of Niobium Dopant concentrations on TiO2 nanotube arrays film via dual-steps electrochemical method for humidity sensor, JOURNAL OF POROUS MATERIALS. . doi:10.1007/s10934-025-01853-3
  4. Abd Samad, Muhammad Izzuddin; Badrudin, Syazwani Izrah; Ponnuthurai, Darven Raj; Mansor, Marwan; Nayan, Nafarizal; Abu Bakar, Ahmad Shuhaimi; Latif, Rhonira (2024). Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride (100) thin film growth using ceramic target, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T. 29, 2248-2257. doi:10.1016/j.jmrt.2024.01.286
  5. Azmi, Nor Syafiqah; Mazlan, Muhammad Naim; Taib, Mohd Ikram Md; Ahmad, Mohd Anas; Samsuri, Mohd Shahrul Nizam; Mansor, Marwan; Hisyam, Muhammad Iznul; Abu Bakar, Ahmad Shuhaimi; Zainal, Norzaini (2024). Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 173. doi:10.1016/j.mssp.2024.108177
  6. Bakar, A. S. A. A.; Hatta, S. F. W. M.; Soin, N.; Nouxman, M. H. A.; Rezali, F. A. M.; Daut, M. H. M. (2024). High gain transimpedance amplification for wireless glucose monitoring in a wearable health sensor system, ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING. . doi:10.1007/s10470-024-02276-x
  7. Hisyam, Muhammad Iznul; Shuhaimi, Ahmad; Norhaniza, Rizuan; Mansor, Marwan; Williams, Adam; Hussin, Mohd Rofei Mat (2024). Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal-Organic Chemical Vapour Deposition, CRYSTALS. 14(4). doi:10.3390/cryst14040371
  8. Mansor, Mazwan; Ng, S. S.; Syamsul, M.; Pakhuruddin, M. Z.; Abu Bakar, A. S. (2024). Replication advancements review in ultraviolet GaN/AlGaN quantum well light emitting diodes: engineering, simulation and validation, PHYSICA SCRIPTA. 99(12). doi:10.1088/1402-4896/ad8f71
  9. Tan, Gary; Abu Bakar, Ahmad Shuhaimi; Low, Hann Sen; Ooi, Chong Seng; Al-Zuhairi, Omar; Wong, Yew Hoong; Norhaniza, Rizuan; Abdul Rais, Shamsul Amir; Abd Majid, Wan Haliza (2024). The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11-22) InGaN/GaN Light Emitting Diode, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. . doi:10.1002/pssb.202300542
  10. Abd Samad, Muhammad Izzuddin; Noor, Mimiwaty Mohd; Nayan, Nafarizal; Abu Bakar, Ahmad Shuhaimi; Mansor, Marwan; Zuhdi, Ahmad Wafi Mahmood; Hamzah, Azrul Azlan; Latif, Rhonira (2023). Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films, SCRIPTA MATERIALIA. 226. doi:10.1016/j.scriptamat.2022.115228
  11. Hisyam, Muhammad Iznul; Norhaniza, Rizuan; Shuhaimi, Ahmad; Mansor, Marwan; Williams, Adam; Hussin, Mohd Rofei Mat (2023). Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate., SURFACES AND INTERFACES. 40. doi:10.1016/j.surfin.2023.103041
  12. Mansor, Marwan; Norhaniza, Rizuan; Shuhaimi, Ahmad; Hisyam, Muhammad Iznul; Omar, Al-Zuhairi; Williams, Adam; Mat Hussin, Mohd Rofei (2023). Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer, SCIENTIFIC REPORTS. 13(1). doi:10.1038/s41598-023-35677-5
  13. Tan, Gary; Abu Bakar, Ahmad Shuhaimi; Ooi, Chong Seng; Al-Zuhairi, Omar; Wong, Yew Hoong; Abd Majid, Wan Haliza (2023). The effect of ammonia partial pressure on the growth of semipolar (11-22) InGaN/GaN MQWs and LED structures, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 291. doi:10.1016/j.mseb.2023.116368
  14. Al-Zuhairi, O; Anuar, A; Makinudin, AHA; Abu Bakar, AS; Azlan, MN; Supangat, A (2022). Magnesium doped semipolar (11-22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality, THIN SOLID FILMS. 741. doi:10.1016/j.tsf.2021.139003
  15. Al-Zuhairi, Omar; Shuhaimi, Ahmad; Nayan, Nafarizal; Azman, Adreen; Kamarudzaman, Anas; Alobaidi, Omar; Ghanim, Mustafa; Abdullah, Estabraq T.; Zhu, Yong (2022). Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review, COATINGS. 12(2). doi:10.3390/coatings12020275
  16. Azman, Zulkifli; Nayan, Nafarizal; Hasnan, Megat Muhammad Lkhsan Megat; Abu Bakar, Ahmad Shuhaimi; Mamat, Mohamad Hafiz; Yusop, Mohd Zamri Mohd (2022). Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties, INTERNATIONAL JOURNAL OF NANOTECHNOLOGY. 19(2-5), 404-417. doi:10.1504/IJNT.2022.124519
  17. Bakri, A. S.; Nafarizal, N.; Abu Bakar, A. S.; Hasnan, M. M. I. Megat; Raship, N. A.; Omar, W. I. Wan; Azman, Z.; Ali, R. A. Mohamed; Abd Majid, W. H.; Ahmad, M. K.; Aldalbahi, A. (2022). Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. . doi:10.1007/s10854-022-08186-w
  18. Ooi, Chong Seng; Shuhaimi, Ahmad; Tan, Gary; Al-Zuhairi, Omar; Abd Majid, Wan Haliza (2022). Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112 over bar 2) GaN: Crystal Quality and Surface Morphology Study, CRYSTALS. 12(2). doi:10.3390/cryst12020247
  19. Tan, Gary; Shuhaimi, Ahmad; Norhaniza, Rizuan; Zahir, Norhilmi; Low, Yan Jie; Wong, Yew Hoong; Abd Majid, Wan Haliza (2022). Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11-22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT), PHOTONICS. 9(9). doi:10.3390/photonics9090646
  20. Abd Rahman, M. N., Shuhaimi, A., Khudus, M., Anuar, A., Zainorin, M. Z., Talik, N. A., . . . Abd Majid, W. H. (2021). Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD. Journal of Electronic Materials, 50(4), 2313-2322. doi: 10.1007/s11664-021-08768-0
  21. Abd Rahman, M. N., Shuhaimi, A., Seng, O. C., Tan, G., Anuar, A., Talik, N. A., . . . Abd Majid, W. H. (2021). The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition. Journal of Materials Science-Materials in Electronics, 32(3), 3211-3221. doi: 10.1007/s10854-020-05070-3
  22. Azman, A., Kamarundzaman, A., Abu Bakar, A. S., & Abd Majid, W. H. (2021). The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition. Materials Science in Semiconductor Processing, 131, 12. doi: 10.1016/j.mssp.2021.105836
  23. Azman, Z., Nayan, N., Hasnan, M., Othman, N., Bakri, A. S., Abu Bakar, A. S., . . . Yusop, M. Z. M. (2021). Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38(3), 86-92. doi: 10.1108/mi-02-2021-0013
  24. Bakri, A. S., Nayan, N., Soon, C. F., Ahmad, M. K., Abu Bakar, A. S., Abd Majid, W. H., & Raship, N. A. (2021). Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma. Microelectronics International, 38(3), 99-104. doi: 10.1108/mi-02-2021-0015
  25. Hussin, H. N., Talik, N. A., Abd Rahman, M. N., Mahat, M. R., Poopalan, P., Shuhaimi, A., & Abd Majid, W. H. (2021). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, 121, 8. doi: 10.1016/j.mssp.2020.105431
  26. Kamarundzaman, A., Abu Bakar, A. S., Azman, A., Omar, A. Z., Talik, N. A., Supangat, A., & Abd Majid, W. H. (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN. Scientific reports, 11(1), 13. doi: 10.1038/s41598-021-89201-8
  27. Kamarundzaman, Anas; Abu Bakar, Ahmad Shuhaimi; Azman, Adreen; Omar, Al-Zuhairi; Talik, Noor Azrina; Supangat, Azzuliani; Abd Majid, Wan Haliza (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN (vol 11, 9724, 2021), SCIENTIFIC REPORTS. 11(1). doi:10.1038/s41598-021-96016-0
  28. Makinudin, A. H. A., Al-Zuhairi, O., Anuar, A., Zainorin, M. Z., Bakar, A. S. A., DenBaars, S., & Supangat, A. (2021). Impact of crystallinity towards the performance of semi-polar (11-22) GaN UV photodetector. Materials Letters, 286, 5. doi: 10.1016/j.matlet.2020.129244
  29. Makinudin, A. H. A., Omar, A., Abu Bakar, A. S., Anuar, A., & Supangat, A. (2021). Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720, 6. doi: 10.1016/j.tsf.2020.138489
  30. Rais, S. A. A., Hassan, Z., Abu Bakar, A. S., Abd Rahman, M. N., Yusuf, Y., Taib, M. I. M., . . . Shoji, D. (2021). Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11(3), 926-935. doi: 10.1364/ome.413417
  31. Samsudin, M. E. A., Yusuf, Y., Zainal, N., Abu Bakar, A. S., Zollner, C., Iza, M., & DenBaars, S. P. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38(3), 113-118. doi: 10.1108/mi-02-2021-0012
  32. Zahir, N., Talik, N. A., Harun, H. N., Kamarundzaman, A., Tunmee, S., Nakajima, H., . . . Majid, W. H. A. (2021). Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN. Applied Surface Science, 540, 12. doi: 10.1016/j.apsusc.2020.148406
  33. Abd Rahman, M. N., Yusuf, Y., Anuar, A., Mahat, M. R., Chanlek, N., Talik, N. A., . . . Shuhaimi, A. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 22(19), 3309-3321. doi: 10.1039/d0ce00113a
  34. Abd Rahman, Mohd Nazri; Yusuf, Yusnizam; Anuar, Afiq; Mahat, Mohamad Raqif; Chanlek, Narong; Talik, Noor Azrina; Abdul Khudus, Muhammad I. M.; Zainal, Norzaini; Abd Majid, Wan Haliza; Shuhaimi, Ahmad (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD, CRYSTENGCOMM. 22(19), 3309-3321. doi:10.1039/d0ce00113a
  35. Anuar, A., Makinudin, A. H. A., Al-Zuhairi, O., Abu Bakar, A. S., Supangat, A. (2020). Crystal quality and surface structure tuning of semi-polar (11-22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films, 697, 7. doi: 10.1016/j.tsf.2020.137817
  36. Anuar, A., Makinudin, A. H. A., Al-Zuhairi, O., Chanlek, N., Abu Bakar, A. S., Supangat, A. (2020). Growth of semi-polar (11(2)over-bar2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SHAT) method. Vacuum, 174, 8. doi: 10.1016/j.vacuum.2020.109208
  37. Kamarudzaman, A., Bin Abu Bakar, A. S., Azman, A., Omar, A. Z., Supangat, A., Talik, N. A. (2020). Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, 105, 8. doi:10.1016/j.mssp.2019.104700
  38. Mahat, M. R., Talik, N. A., Abd Rahman, M. N., Anuar, M. A., Allif, K., Azman, A., . . . Abd Majid, W. H. (2020). Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, 106, 7. doi:10.1016/j.mssp.2019.104757
  39. Mahat, Mohamad Raqif; Talik, Noor Azrina; Abd Rahman, Mohd Nazri; Anuar, Mohd Afiq; Allif, Kamarul; Azman, Adreen; Nakajima, Hideki; Shuhaimi, Ahmad; Abd Majid, Wan Haliza (2020). Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 106. doi:10.1016/j.mssp.2019.104757
  40. Nizamani, B., Jafry, A. A. A., Khudus, M., Memon, F. A., Shuhaimi, A., Kasim, N., . . . Harun, S. W. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser. Optics and Laser Technology, 124, 6. doi: 10.1016/j.optlastec.2019.105998
  41. Nizamani, B., Jafry, A. A. A., Khudus, M., Rosol, A. H. A., Samsamnun, F. S. M., Kasim, N., . . . Harun, S. W. (2020). Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide. Optical Fiber Technology, 55, 5. doi: 10.1016/j.yofte.2019.102124
  42. Nizamani, B., Salam, S., Jafry, A. A. A., Zahir, N. M., Jurami, N., Khudus, M., . . . Harun, S. W. (2020). Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*. Chinese Physics Letters, 37(5), 4. doi: 10.1088/0256-307x/37/5/054202
  43. Samsamnun, F. S. M., Zulkipli, N. F., Khudus, M., Shuhaimi, A., Majid, W. H. A., Harun, S. W. (2020). Alq(3) saturable absorber for generating Q-switched pulses in erbium-doped fiber laser. Microwave and Optical Technology Letters, 62(3), 1028-1032. doi: 10.1002/mop.32178
  44. Samsamnun, F. S. M., Zulkipli, N. F., Majid, W. H. A., Khudus, M., Shuhaimi, A., Rosol, A. H. A., . . . Harun, S. W. (2020). MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications. Journal of Modern Optics, 67(8), 746-753. doi: 10.1080/09500340.2020.1769762
  45. Samsamnun, F. S. M., Zulkipli, N. F., Sarjidan, M. A. M., Harun, S. W., Majid, W. H. A., Khudus, M., . . . Yasin, M. (2020). Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 7. doi: 10.1016/j.yofte.2019.102073
  46. Samsamnun, F. S. M.; Zulkipli, N. F.; Majid, W. H. A.; Khudus, M. I. M. A.; Shuhaimi, A.; Rosol, A. H. A.; Arof, H.; Yasin, M.; Harun, S. W. (2020). MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications, JOURNAL OF MODERN OPTICS. 67(8), 746-753. doi:10.1080/09500340.2020.1769762
  47. Samsamnun, Farina S. M.; Zulkipli, Nur F.; Khudus, Muhammad I. M. A.; Shuhaimi, Ahmad; Majid, Wan H. A.; Harun, Sulaiman W. (2020). Alq3 saturable absorber for generating Q-switched pulses in erbium-doped fiber laser, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 62(3), 1028-1032. doi:10.1002/mop.32178
  48. Zainal, N., Samsudin, M. E. A., Taib, M. I. M., Ahmad, M. A., & Shuhaimi, A. (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures, 148, 6. doi: 10.1016/j.spmi.2020.106722
  49. Abd Rahman, M. N., Sulaiman, A. F., Khudus, M., Allif, K., Talik, N. A., Basri, S. H., Shuhaimi, A. (2019). Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58, 4. doi:10.7567/1347-4065/ab09d3
  50. Makinudin, A. H. A., Omar, A. Z., Anuar, A., Abu Bakar, A. S., DenBaars, S. P., Supangat, A. (2019). Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11-22) GaN Template. Crystal Growth Design, 19(11), 6092-6099. doi:10.1021/acs.cgd.9b00206
  51. Najwa, S., Shuhaimi, A., Talik, N. A., Ameera, N., Sobri, M., Rusop, M. (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science, 479, 1220-1225. doi:10.1016/j.apsusc.2019.01.123
  52. Sarjidan, M. A. M., Shuhaimi, A., Abd Majid, W. H. (2019). Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode. Journal of Nanoscience and Nanotechnology, 19(11), 6995-7003. doi:10.1166/jnn.2019.16724
  53. Taib, M. I. M., Munirah, N., Waheeda, S. N., Shuhaimi, A., Sabki, S. N., Zainal, N. (2019). Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template. Journal of Electronic Materials, 48(6), 3547-3553. doi:10.1007/s11664-019-07107-8
  54. Taib, M. I. M., Samsudin, M. E. A., Alias, E. A., Waheeda, S. N., Ibrahim, N., Shuhaimi, A., Zainal, N. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, 6(8), 11. doi:10.1088/2053-1591/ab1dd4
  55. Abd Rahman, M. N., Shuhaimi, A., Yusuf, Y., Li, H. J., Sulaiman, A. F., Samsudin, M. E. A., . . . Khudus, M. (2018). Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120, 319-326. doi:10.1016/j.spmi.2018.05.024
  56. Ali, A. H., Hassan, Z., Shuhaimi, A. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, 443, 544-547. doi:10.1016/j.apsusc.2018.03.024
  57. Rahman, M. N. A., Yusuf, Y., Mansor, M., Shuhaimi, A. (2016). Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD, Applied Surface Science. 362(572-576), Article
Scopus
  1. Abd Rahman M.N., Yusuf Y., Zainal N., Shuhaimi A. (2025). Enhanced stress relaxation of GaN epilayers on silicon (1 1 1) substrates with a unique AlN/GaN multilayer design, Journal of Materials Science. . doi:10.1007/s10853-025-10973-9
  2. Abd Samad M.I., Badrudin S.I., Mansor M., Nayan N., Abu Bakar A.S., Yusop M.Z., Latif R. (2025). Thin film sputter-deposition of AlN crystals in oxygenated chamber: a pilot study, Materials Research Express. 12(1). doi:10.1088/2053-1591/ad9b70
  3. Azhar N.E.A., Sulimai N.H., Salifairus M.J., Mamat M.H., Shariffudin S.S., Shuhaimi A., Malek M.F., Eswar K.A., Rusop M. (2025). Manipulation of Niobium Dopant concentrations on TiO2 nanotube arrays film via dual-steps electrochemical method for humidity sensor, Journal of Porous Materials. . doi:10.1007/s10934-025-01853-3
  4. Abd Rahman M.N., Zuhdi A.W.M., Amirulddin U.A.U., Isah M., Azman N.I., Arsad A.Z., Arzaee N.A., Mansor M., Shuhaimi A. (2024). Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system, Ceramics International. 50(21), 43070-43081. doi:10.1016/j.ceramint.2024.08.158
  5. Mansor M., Ng S.S., Syamsul M., Pakhuruddin M.Z., Abu Bakar A.S. (2024). Replication advancements review in ultraviolet GaN/AlGaN quantum well light emitting diodes: engineering, simulation and validation, Physica Scripta. 99(12). doi:10.1088/1402-4896/ad8f71
  6. Mazwan M., Ng S.S., Samsol Baharin M.S.N., Pakhuruddin M.Z., Abu Bakar A.S., Abd. Rahman M.N., Al- Zuhairi O., Abd Rahim A.F. (2024). Radio frequency magnetron sputtering growth of Ni-doped ZnO thin films with nanocolumnar structures, Journal of Crystal Growth. 644. doi:10.1016/j.jcrysgro.2024.127835
  7. Samad M.I.A., Badrudin S.I., Ponnuthurai D.R., Mansor M., Nayan N., Abu Bakar A.S., Latif R. (2024). Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride 100 thin film growth using ceramic target, Journal of Materials Research and Technology. 29, 2248-2257. doi:10.1016/j.jmrt.2024.01.286
  8. Hisyam M.I., Norhaniza R., Shuhaimi A., Mansor M., Williams A., Hussin M.R.M. (2023). Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate., Surfaces and Interfaces. 40. doi:10.1016/j.surfin.2023.103041
  9. Mansor M., Norhaniza R., Shuhaimi A., Hisyam M.I., Omar A.-Z., Williams A., Mat Hussin M.R. (2023). Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer, Scientific Reports. 13(1). doi:10.1038/s41598-023-35677-5
Others
  1. Al-Zuhairi Omar, Abdullah Haaziq Ahmad Makinudin, Ahmad Shuhaimi, AfiqAnuar, Anas Kamarudzaman, Najwa Surani, Azzuliani Supangat. (2021). Enhanced Indium Adsorption and Surface Evolution of Semi-Polar (11-22) LED via a Strain Periodic Alternating Superlattice (SPAS-L). Materials Today Communications, in-press, 102441.
  2. Anas Kamarundzaman, Ahmad Shuhaimi Abu Bakar, Adreen Azman, Al-Zuhairi Omar, Noor Azrina Talik, Azzuliani Supangat & Wan Haliza Abd Majid. (2021). Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a plane GaN. Scientific Reports, Volume 11, Article 9724 (2021).
  3. Hussin, Hayatun Najihah, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Mahat, Mohd Raqif, Poopalan, Prabakaran, Shuhaimi, Ahmad, Abd Majid, Wan Haliza. (2020). The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance. Materials Science in Semiconductor Processing, January 2021, 121.
  4. Samsudin, Muhammad Esmed Alif; Yusuf, Yusnizam ; Christian, Zollner; MIchael, Iza; DenBaars, Steven; Abu Bakar, Ahmad Shuhaimi; and Zainal, Norzaini. (2021). Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN based UVC LED. Microelectronics International, accepted.
  5. Afiq Anuar, Abdullah Haaziq Ahmad Makinudin, Omar Al-Zuhairi, Narong Chanlek, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Growth of semi-polar (11-22) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method. Vacuum 174, 109208 (2020).
  6. Afiq Anuar, Abdullah Haaziq, Ahmad Makinudin, Omar Al-Zuhairi, Ahmad Shuhaimi Abu Bakar, Azzuliani Supangat. 2020. Crystal quality and surface structure tuning of semi-polar (11 22) GaN on m-plane sapphire via in-situ multiple ammonia treatment. Thin Solid Films 697, 137817 (2020).
  7. B. Nizamani, A.A.A. Jafry, M.I.M. Abdul Khudus, F.A. Memon, A. Shuhaimi, N. Kasim, E. Hanafi, M. Yasin, S.W. Harun. (2020). Indium tin oxide coated D-shape fiber as saturable absorber for passively Q switched erbium-doped fiber laser. Optics & Laser Technology, 124, 105998 (2020).
  8. F.S.M. Samsamnun, N.F. Zulkipli, M.A.M. Sarjidan, S.W. Harun, W.H.A. Majid, M.I.M.A. Khudus, A. Shuhaimi, A.H.A. Rosol, M.F.M. Rusdi, A.A.A. Jafry, M. Yasin. (2019) Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser. Optical Fiber Technology, 54, 102073 (2020).
  9. Farina S. M. Samsamnun, Nur F. Zulkipli, Muhammad I. M. A. Khudus, Ahmad Shuhaimi, Wan H. A. Majid, Sulaiman W. Harun. 2019. Alq3 saturable absorber for generating Q switched pulses in erbium doped fiber laser. Microwave and Optical Technology Letters, Early View.
  10. Mohamad Raqif Mahat, Noor AzrinaTalik, Mohd Nazri Abd Rahman, Mohd Afiq Anuar, Kamarul Allif, Adreen Azman, Hideki Nakajima, Ahmad Shuhaimi, Wan Haliza Abd Majid. 2020. Electronic surface, optical and electrical properties of p GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED. Materials Science in Semiconductor Processing, Volume 106, 104757 (2020).
  11. Mohd Nazri Abd Rahman, Yusnizam Yusuf, Afiq Anuar, Mohamad Raqif Mahat, Narong Chanlek, Noor Azrina Talik, Muhammad I. M. Abdul Khudus, Norzaini Zainal, Wan Haliza Abd Majid and Ahmad Shuhaimi. (2020). Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 2020, Advance Article
  12. N. Zainal, M.E.A.Samsudin, M. Ikram Md Taib, M.A.Ahmad, A. Shuhaimi (2020). Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate. Superlattices and Microstructures 148, 106722 (2020).
  13. Abdullah Haaziq Ahmad Makinudin, Al-Zuhairi Omar, Afiq Anuar, Ahmad Shuhaimi Abu Bakar, Steven P. DenBaars, Azzuliani Supangat. 2019. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11 22) GaN Template, Crystal Growth & Design 19, 6092-6099 (2019).
  14. M Ikram Md Taib, M E A Samsudin, E A Alias, S N Waheeda, N Ibrahim, A Shuhaimi and N Zainal. (2019). Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate. Materials Research Express, Volume 6, Number 8.
  15. Rahman, M. N. A., Talik, N. A., Khudus, M. I. A., Sulaiman, A. F., Allif, K., Zahir, N. M., & Shuhaimi, A. (2019). Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm.
  16. S. Najwa, A. Shuhaimi, N.A. Talik, N. Ameera, M. Sobri & M.Rusop (2019). In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science 479, 1220-1225.
  17. Adreen Azman, Ahmad Shuhaimi, Al-Zuhairi Omar, Anas Kamarundzaman, Muhammad Imran Mustafa Abdul Khudus, Azharul Ariff, M.E.A. Samsudin, Norzaini Zainal, Saadah Abd Rahman. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, in-press.
  18. Ahmad Hadi Ali, Zainuriah Hassan, Ahmad Shuhaimi. (2018). Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si. Applied Surface Science, Volume 443, Pages 544-547.
  19. Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman & AzzulianiSupangat. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD. Superlattices and Microstructures, Volume 117, Pages 207-214.
  20. Al-Zuhairi Omar, Ahmad Shuhaimi, Abdullah Haaziq Ahmad Makinudin, Muhammad I.M. Abdul Khudus, Azzuliani Supangat. (2018). Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing 86, 1 November 2018, Pages 1 7.
  21. Mohd Nazri Abd. Rahman, Ahmad Shuhaimi, Yusnizam Yusuf, Hongjian Li, Abdullah Fadil Sulaiman, Muhammad Esmed Alif Samsudin, Norzaini Zainal, Muhammad I.M. Abdul Khudus. 2018. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures 120, 319-326.
  22. P.C. Sivanathan, Ahmad Shuhaimi, Hebal Hamza,Stacy J. Kowsz, Muhammad I.M. Abdul Khudus, Hongjian Li, Kamarul Allif. 2018. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD. Superlattices and Microstructures, In Press, Accepted.
  23. Ganesh, V., Alizadeh, M., Shuhaimi, A., Adreen, A., Pandikumar, A., Jayakumar, M., Huang, N.M., Ramesh, R., Baskar, K., and Rahman S.A. (2017). Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. Journal of Alloys and Compounds 706 (2017) 629-636.
  24. Hasan, S.W., Said, S.M., Bakar, A.S.B.A. et al. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells. Journal of Materials Science, (2017), pp 1-11.
  25. K H Tan, H A Tajuddin, R A Ahmad, A Suhaimy, M R Johan , Fabrication of Nanocomposite gold polymer Metamaterials with tunable optical properties, Optik
  26. Amina Benzina, Abdelhadi Lachebi, Ahmad Shuhaimi, Saadah Abdul Rahman, Hamza Abid. 2016. First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke Johnson (mBJ) exchange potential. Optik. In Press, Accepted Manuscript.
  27. Hasan, S. W., Said, S. M., Sabri, M. F. M., Bakar, A. S. A., Hashim, N. A., Hasnan, M. M. I. M., Pringle, J. M. & MacFarlane, D. R. (2016). High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly (Vinylidene Fluoride) Membrane. Scientific reports, 6(29328), 1-11.
  28. Ameera, N., Shuhaimi, A., Surani, N., Rusop, M., Hakim, M., Mamat, M. H., Mansor, M., Sobri, M., Ganesh, V., Yusuf, Y. 2015. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode Ceramics International. (Tier 1, Impact Factor = 2.605)
  29. Annuar NZM, Sabri MFM & Bakar ASA. 2014. Modeling and simulation of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) growth chamber. Microsyst Technol, 21(1), 309-318 (2015)
  30. Azarang, M., Shuhaimi, A., Sookhakian, M. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration Rsc Advances. (Tier 1, Impact Factor = 3.840)
  31. Azarang, M., Shuhaimi, A., Yousefi, R., Jahromi, S. P. 2015. One-pot sol-gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue Rsc Advances. (Tier 1, Impact Factor = 3.840)
  32. Azimah, E., Zainal, N., Shuhaimi, A., Hassan, Z. 2015. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN Superlattices and Microstructures. (Tier 2, Impact Factor = 2.097)
  33. E. Azimah, N. Zainal, A. Shuhaimi & Z. Hassan. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. Superlattices and Microstructures 82 (2015) 592-598.
  34. Ganesh, V., Alizadeh, M., Shuhaimi, A., Pandikumar, A., Goh, B. T., Huang, N. M., Rahman, S. A. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation Rsc Advances. (Tier 1, Impact Factor = 3.840)
  35. M. Alizadeh, V. Ganesh, H. Mehdipour, N.F.F Nazarudin, B.T. Goh, A. Shuhaimi, S.A. Rahman. 2015. Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation. Journal of Alloys and Compounds 632 (2015) 741-747.
  36. Majid Azarang, Ahmad Shuhaimi & Mehran Sookhakian. 2015. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on graphene oxide concentration. RSC Advances. Accepted.
  37. Vattikondala Ganesh, Mahdi Alizadeh, Ahamad Shuhaimi, Alagarsamy Pandikumar, Boon Tong Goh, Nay Ming Huang, and Saadah Abdul Rahman. 2015. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation. RSC Advances 5: 17325-17335.
  38. Ahmad Hadi Ali, Ahmad Shuhaimi & Zainuriah Hassan. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes. Applied Surface Science 288: 599-603.
  39. Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar & Zainuriah Hassan. 2014. Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science 315 (2014) 387-391.
  40. Ali, A. H., Abu Bakar, A. S., Hassan, Z. 2014. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer Applied Surface Science. (Tier 1, Impact Factor = 2.538)
  41. Ali, A. H., Shuhaimi, A., Hassan, Z. 2014. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes Applied Surface Science. (Tier 1, Impact Factor = 2.538)
  42. Azarang, M., Shuhaimi, A., Yousefi, R., Golsheikh, A. M., Sookhakian, M. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB Ceramics International. (Tier 1, Impact Factor = 2.086)
  43. M. Alizadeh, H. Mehdipour, V. Ganesh, A. N. Ameera, B. T. Goh, A. Shuhaimi, S. A. Rahman. 2014. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films. Applied Physics A: Materials Science & Processing s00339-014-8649-z (2014).
  44. M. Sobri, A. Shuhaimi, K.M. Hakim, V. Ganesh, M.H. Mamat, M. Mazwan, S. Najwa, N. Ameera, Y. Yusnizam & M. Rusop. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering. Superlattices and Microstructures 70: 82-90.
  45. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, A. Moradi Golsheikh, M. Sookhakian. 2014. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB. Ceramics International 40 (2014) 10217-10221.
  46. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014).
  47. Majid Azarang, Ahmad Shuhaimi, Ramin Yousefi, and M. Sookhakian. 2014. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation. Journal of Applied Physics 116, 084307 (2014).
  48. N. Ameera, A. Shuhaimi, S. Najwa, M. Rusop, K.M. Hakim, M.H. Mamat, M. Mazwan, M. Sobri, V. Ganesh & Y. Yusnizam. 2014. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode. Ceramics International. Accepted (2014).
  49. N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, A. Shuhaimi Abu Bakar. 2014. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber. Microsystem Technologies 20.
  50. Najwa, S., Shuhaimi, A., Ameera, N., Hakim, K. M., Sobri, M., Mazwan, M., Mamat, M. H., Yusnizam, Y., Ganesh, V., Rusop, M. 2014. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979)
  51. S. NAJWA, A. SHUHAIMI, N. AMEERA, K. M. HAKIM, M. SOBRI, M. MAZWAN, M. Z. MUSA, M. H. MAMAT & M. RUSOP. 2014. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering. Advanced Materials Research 895: 12-16.
  52. S. Najwa, A. Shuhaimi, N. Ameera, K. M. Hakim, M. Sobri, M. Mazwan, M. H. Mamat, Y. Yusnizam, V. Ganesh & M. Rusop. 2014. The Effect of Sputtering Pressure on Structural, Optical and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by Radio Frequency (RF) Magnetron Sputtering. Superlattices and Microstructures 72 (2014) 140-147.
  53. Sobri, M., Shuhaimi, A., Hakim, K. M., Ganesh, V., Mamat, M. H., Mazwan, M., Najwa, S., Ameera, N., Yusnizam, Y., Rusop, M. 2014. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering Superlattices and Microstructures. (Tier 2, Impact Factor = 1.979)
  54. Ahmad Hadi Ali, Ahmad Shuhaimi Abu Bakar, Takashi Egawa & Zainuriah Hassan. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer. Superlattices and Microstructures 60: 201 207.
  55. Ahmad Hadi Ali, Ahmad Shuhaimi, Zainuriah Hassan & Yushamdan Yusof. 2013. Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x- ray diffraction. Advanced Materials Research 620: 22- 27.
  56. Ali, A. H., Abu Bakar, A. S., Egawa, T., Hassan, Z. 2013. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer Superlattices and Microstructures. (Tier 2, Impact Factor = 1.564)
  57. E. Azimah, N. Zainal, Z. Hassan, A. Shuhaimi & Azlan Bahrin. 2013. Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research 620: 453-457.
  58. N. Zieyana Mohamed Annuar, Mohd Faizul Mohd Sabri, & A. Shuhaimi Abu Bakar. 2013. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor. Advanced Materials Research 626: 396-400.
  59. NZM Annuar, MFM Sabri. ASA Bakar, Investigation of the geometry modeling of metal organic halide vapor phase epitaxy (MOHVPE) reactor, Advanced Material Research, vol. 626 (2013), 396-400
  60. Zurianti A. Rahman, Khaulah Sulaiman, Mohamad Rusop & Ahmad Shuhaimi. 2013. A Study on The Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) as a Novel N-type Material in a Thermoelectric Device. Advanced Materials Research 667: 165-171.
  61. Rahman, Z. A., Sulaiman, K., Shuhaimi, A., Rusop, M. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell 
  62. Zurianti A. Rahman, Khaulah Sulaiman, Ahmad Shuhaimi, Mohamad Rusop. 2012. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell. Advanced Materials Research 501: 252-256.
  63. Shuhaimi, A. & Egawa, T. 2011. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD. AIP Conf. Proc. 1328: 232-234.
  64. Shuhaimi, A., Hassan, Z. & Egawa, T. 2011. InGaN-based blue LED grown on Si(111) substrate. IEEE RSM2011 Proc. 6088279:6-8.
  65. Bin Abu Bakar Ahmad Shuhaimi, Arata Watanabe, and Takashi Egawa, Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-based Multi- Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer, Jpn. J. Appl. Phys. 49 (2010) 021002.
  66. Takashi Egawa and Bin Abu Bakar Ahmad Shuhaimi, High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD, J. Phys. D: Appl. Phys. 43, 354008 (2010).
  67. Bin Abu Bakar Ahmad Shuhaimi , Hiroyuki Kawato, Youhua Zhu and Takashi Egawa, Growth of InGaN-based laser diode structure on silicon (111) substrate, Journal of Physics: Conference Series 152 (2009) 012007.
  68. Bin Abu Bakar Ahmad Shuhaimi, Pum Chian Khai, Takaaki Suzue, Yukiyasu Nomura and Takashi Egawa, Characterization and Fabrication of InGaN-based blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate, Mater. Res. Soc. Symp. Proc. 1167 (2009) O04-01.
  69. Bin Abu Bakar Ahmad Shuhaimi, Takaaki Suzue, Yukiyasu Nomura, Yoshinori Maki and Takashi Egawa, Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer, Mater. Res. Soc. Symp. Proc. 1167 (2009) O02-05.

RESEARCH PROJECT

National
  1. 2025 - 2027, UNIVERSITI MALAYA RESEARCH EXCELLENCE GRANT (UMREG)
    Quantum Tunnelling: An Efficient Approach for Extracting Electrons in Metal-Insulator-Semiconductor (Cu-SiOx-Si Quantum Wires) Photoelectrodes for Affordable Hydrogen Economy ( Co-Researcher)
  2. 2021 - 2026, MOSTI-Funding
    High Efficiency High Electron Mobility Transistor (hemt) For Power Electronics Modules ( Principal Investigator(PI))
  3. 2023 - 2026, Bantuan Khas Penyelidikan (BKP Special)
    Low Temperature Flow Modulation Epitaxy For Alingan Growth, Packaging And Deployment Of Duv Leds ( Co-Researcher)
  4. 2014 - 2016, RACE Grant
    Nanostructure Evolution of ZnO Thin Films Incorporated with Nanorod Layers: The Amelioration of Highly c-Axis Oriented for the Growth of Defect Free Film ( Consultant)
  5. 2011 - 2015, MOHE
    Synthesis and Application of Low Dimensional Materials ( Consultant)
  6. 2013 - 2015, Postgraduate Research Grant(PPP)
    Investigation of Morphological Structural and Optical Properties of ZnO nanostructures ( Coordinator)
  7. 2013 - 2015, Exploratory Research Grant Scheme (ERGS)
    Producing high quality cubic GaN using porous GaAs substrate for high efficient devices. ( Consultant)
  8. 2011 - 2014, Geran Penyelidikan Universiti Malaya (UMRG)
    Development of Metal-Organic Halide Vapor Phase Epitaxy (MOHVPE) for Growth of Galium Nitride (GaN) ( Principal Investigator(PI))
  9. 2012 - 2014, APEX Delivering Excellence Grant (DE2012)
    Development of AlGaN/GaN strained-layer superlattice stack structure for high energy-efficient and cost-effective lnGaN based LEDs ( Consultant)
  10. 2012 - 2014, Geran Universiti Penyelidikan (RU) Universiti Sains Malaysia (USM)
    Study of Cubic GaN on Porous GaAs Substrate for High Efficient Energy Devices ( Consultant)
  11. 2011 - 2013, Exploratory Research Grant Scheme (ERGS)
    Investigation on Vapor Phase Epitaxy Processes for Growth of Nitride-based Wide Bandgap Semiconductor Thin-Films ( Principal Investigator(PI))
  12. 2011 - 2013, Geran Penyelidikan Jangka Pendek Universiti Sains Malaysia (USM)
    Optical Study on III-Nitride Semiconductor Materials and Its Devices ( Consultant)
  13. 2012 - 2012, Geran Penyelidikan Universiti Malaya (UMRG)
    Probing Nano and Electronics Structures of Low Dimensional Semiconducting Materials ( Consultant)
Private
  1. 2024 - 2026, Private Funding
    Gallium Nitride Vertical Power Metal-insulator-semiconductor Field Effect Transistor (gan Vertical Power Misfet) ( Principal Investigator(PI))

CONSULTANCY PROJECT

  • Collaboration On Gan Power Devices, MIMOS Berhad
    01 Jan 2019 - 01 Jan 2021 (National)
  • Crest Gan-on-gan Epitaxy Program Oversight Committee Member and Technical Committee Member, Collaborative Research in Engineering Science and Technology (CREST)
    01 Dec 2015 - 01 Dec 2020 (National)
  • Due Diligence for Potential Collaboration in Gallium Nitride Power Devices, Collaborative Research in Engineering, Science and Technology (CREST)
    01 Jan 2019 - 01 Jan 2019 (International)
  • Crest Gan-on-gan Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST)
    01 Jan 2014 - 01 Jan 2014 (National)
  • Technical Due Diligence for Crest-ucsb Gan-on-gan Project, Collaborative Research in Engineering, Science & Technology (CREST)
    01 Jan 2014 - 01 Jan 2014 (International)

PAPER PRESENTED

INVITED SPEAKER
  1. High-Quality GaN on Silicon Using Aluminum Nitride Pulsed-Atomic Layer Epitaxy Inserted Buffer, 3rd International Conference on Semiconductor Materials and Technology (3rd ICoSeMT 2023), Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM) (International) (18 Sep 2023 - 19 Sep 2023)
  2. Enhanced Indium Adsorption for Longer Wavelength Luminescence of Semi-Polar (11-22) Cyan LED with Utilization of Strain Periodic Alternating Multi-Layer (SPAM-L), 1ST INTERNATIONAL CONFERENCE ON SUSTAINABLE ENVIRONMENTAL TECHNOLOGY 2019 (ISET2019), Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia (UTM), Malaysia (International) (20 Oct 2019 - 22 Oct 2019)
  3. Improvement of InGaN-based LEDs on Si(111) Substrate by AlGaN/GaN Strained-Layer Superlattices (SLS) Underlayer, Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore. (International) (18 Oct 2010 - 18 Oct 2010)
ORAL PRESENTER
  1. ZnO-based Current Spreading Layer for Nitride Blue Light Color LED, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  2. Effect of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  3. Effects of DC Power Magnetron Sputtering on Aluminium Nitride (AlN) Thin Film, 1st Meeting of Malaysia Nitrides Research Group (MNRG), Centre for Research Initiative (CRI) Natural Sciences, Universiti Sains Malaysia, Penang (National) (07 Apr 2014 - 07 Apr 2014)
  4. Effects of DC power magnetron sputtering on Aluminium Nitride (AIN) thin film, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National) (28 Feb 2014 - 02 Mar 2014)
  5. Influence of Target-Substrate Distance on Properties of Aluminum Nitride Grown on Silicon (111) Substrate by RF Magnetron Sputtering, Malaysia - Japan International Conference on Nanoscience, Nanotechnology & Nanoengineering 2014 (NANO-SciTech 2014 & IC-NET 2014), Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Malaysia (National) (28 Feb 2014 - 02 Mar 2014)
  6. InGaN-based Blue LED Grown on Si(111) Substrate , IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM) 2011, IEEE Electron Device Society (International) (28 Sep 2011 - 29 Sep 2011)
  7. Effect of AlGaN/GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD , National Conference on Physics 2010 / Persidangan Fizik Kebangsaan (PERFIK) 2010, Multimedia University (MMU), Malaysia. (National) (28 Oct 2010 - 30 Oct 2010)
  8. Enhancement of InGaN-based MQW grown on Si(111) substrate by underlying AlGaN/GaN SLS cladding layer , MRS Spring Meeting, San Francisco, USA, Materials Research Society (MRS) (International) (13 Apr 2009 - 17 Apr 2009)
POSTER PRESENTER
  1. The effect of AlN multilayer (ML) growth rate on the growth of semipolar (11-22) InGaN/GaN LED, 14th International Conference on Nitride Semiconductors (ICNS-14), The Japanese Association for Crystal Growth (International) (12 Nov 2023 - 17 Nov 2023)
  2. Growth of high quality GaN on Si (111) substrate employing pulse atomic layer epitaxy (PALE) AlN buffer layer, The 14th International Conference on Nitride Semiconductors (ICNS-14), The Japan Association of Crystal Growth (International) (12 Nov 2023 - 17 Nov 2023)
  3. Characterization and fabrication of InGaN-based blue LED with underlyingAlGaN/GaN SLS cladding layer grown on Si(111) Substrate, MRS Spring Meeting, San Francisco, USA, Materials Research Society (MRS) (International) (13 Apr 2009 - 17 Apr 2009)
  4. Growth of InGaN-based laser diode structure on silicon (111) subtrate, MRS International Materials Research Conference, Chongqing, China, Materials Research Society (MRS) (International) (09 Jun 2008 - 12 Jun 2008)

ACADEMIC/ PROF. SERVICES

Evaluation
  1. (2024) External Reviewer for Phd Thesis "enhancement of Ito/cr-ag/ito/n-si (icai) and Ito/mo-ag/ito/p-si (imai) Transparent Conductive Window Using Laser Annealing Treatment for Solar Cell Applications", National, (Internal Examiner)
  2. (2022) Pelantikan Sebagai Panel Untuk Sesi Proposal Defence: Muhammad Shahrul Arif Bin Adi Rumi (17099008/3), University, (Internal Examiner)
  3. (2019) External examiner for University Tun Hussein Onn Malaysia (UTHM) MSc candidate BIBI ZULAIKHA BINTI BHARI with the title of "Investigation of Buffer Layer for Ag/Si Metal-Semiconductor Contacts", (External Examiner)
  4. (2019) External examiner for University Technology Malaysia (UTM) MSc candidate NUR FARHANA BINTI HASMUNI with the thesis title of "Structure and Properties of Conductive Graphene CNTs-Polymer Composites", (External Examiner)
  5. (2019) Reviewer for Ceramics International, (Reviewer)
Contribution to external organisation
  1. (2019) Interview Panel for MyBrainSc Scholarship 2019 , Ministry of Education Malaysia
  2. (2019) Colloquium Nanotechnology Gallium Nitride, Terahertz and Flexible Electronics 2019 (Kolokium Nanoteknologi GaN, Terahertz dan Flexible Electronics 2019), National Nanotechnolgy Centre (NNC), MESTECC
  3. (2018) Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp , Collaborative Research in Engineering, Science and Technology (CREST)
  4. (2016) Laboratory Training for CREST Semiconductor & Optoelectronics Cluster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center
  5. (2016) Guest Speaker for CREST Semiconductor & Optoelectronic CLuster Bootcamp 2016, Collaborative Research in Engineering, Science and Technology (CREST) Center
  6. (2016) Advisory Committee for 3rd Malaysia Nitrides Research Group 2016, Malaysia Nitrides Research Group (MNRG)
  7. (2014) Research Acculturation Collaborative Effort (RACE) [600-RMI/RACE 16/6/2(9/2013)], Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), National
  8. (2014) Member of GaN-on-GaN Value Management Laboratory, Collaborative Research in Engineering, Science & Technology (CREST)
  9. (2014) Technical Due Diligence for CREST-UCSB GaN-on-GaN Project, Collaborative Research in Engineering, Science & Technology (CREST)
  10. (2013) Exploratory Research Grant Scheme (ERGS) Phase 1 / 2013 [203/PFIZIK/6730095], School of Physics, Universiti Sains Malaysia (USM), National
Mentoring
  1. (2023) Penyelia Kursus Penulisan Ilmiah (six3001) Semester 2, Sesi 2022/2023, University, (Mentor)

SUPERVISION

Postgraduate Student
PhD/ Doctoral
  1. (2025) LOW TEMPERATURE FLOW MODULATION EPITAXY FOR ALINGAN GROWTH, PACKAGING AND DEPLOYMENT OF DUV-LEDS, WAN NUR AMIERHA BINTI WAN IBRAHIM
  2. (2025) OPTIMIZATION OF EPITAXIAL GROWTH CONDITIONS FOR A-PLANE GAN ON R-PLANE SAPPHIRE FOR ENHANCED VERTICAL MOSFET PERFORMANCE, CHEN HONGXU
  3. (2025) OPTIMISED FABRICATION FOR GAN-BASED VERTICAL MOSFET, MOHD NAZRI BIN KASUAN
  4. (2025) DEVELOPMENT OF PASSIVE MODE-LOCKED AND Q-SWITCHED USING ALINGAN BASED SATURABLE ABSORBER FOR SUPERCONTINUUM GENERATION., NURUL IZZAH BINTI SULAIMAN WADI
  5. (2025) OPTIMIZATIONS OF THE LAYER DOPING AND DESIGN IN SEMIPOLAR (11-22) GROWTH TO COMPLEMENT C-PLANE GREEN GAP SHORTCOMINGS, HANN SEN LOW
  6. (2025) GROWTH AND FABRICATION OF ALGAN/GAN-BASED VERTICAL MIS-HEMT ON SILICON(111) SUBSTRATE, MUHAMMAD IZNUL HISYAM BIN MOHD NORIZAN
  7. (2025) DEMONSTRATOR OF AlGaN STEP GRADED WITH AlGaN STRAINED LAYER SUPPERLATTICES BUFFER LAYER HIGH ELECTRON MOBILITY TRANSISTOR ON SILICON (111) SUBSTRATE, NAJWA BINTI SURANI
  8. (2024) Critique on TIS Framework : A Case Study on Gallium Nitride Technology Development and Diffusion in Malaysia, LIM HOO KOOI
  9. (2023) In-Depth Study of Semipolar (11-22) InGan/Gan-Based LED Towards Efficient Green Emission, GARY TAN
  10. (2021) GROWTH AND PROPERTIES OF POLAR AND NON-POLAR InGaN/GaN LEDS ON PATTERNED AND M-PLANE SAPPHIRE SUBSTRATES, MOHD ADREEN SHAH BIN AZMAN SHAH
  11. (2021) GROWTH OF NON-POLAR (11-20) A-PLANE GaN BASED LEDS ON (1-120) R-PLANE SAPPHIRE SUBSTRATES VIA MOCVD, ANAS BIN KAMARUNDZAMAN
  12. (2020) ORGANIC AND NON-ORGANIC SEMICONDUCTOR MATERIALS FOR PULSED FIBER LASER GENERATION IN 1.55-MICRON REGION, FARINA SAFFA BINTI MOHAMAD SAMSAMNUN
  13. (2020) HIGH QUALITY SINGLE-CRYSTALLINE ALUMINIUM NITRIDE GROWN USING PULSED ATOMIC-LAYER EPITAXY TECHNIQUE BY MOCVD ON SAPPHIRE SUBSTRATE, MOHD NAZRI BIN ABD. RAHMAN
  14. (2020) EPITAXIAL GROWTH OF SEMI-POLAR (11-22) GALLIUM NITRIDE FOR UV PHOTOSENSING APPLICATION, ABDULLAH HAAZIQ BIN AHMAD MAKINUDIN
  15. (2019) SEMIPOLAR GAN ON FOREIGN SUBSTRATES VIA MOCVD FOR LED APPLICATIONS, ABDULLAH HAAZIQ BIN AHMAD MAKINUDIN
  16. (2018) DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, MOHD ARIF BIN MOHD SARJIDAN
  17. (2018) CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, OMAR AYAD FADHIL
  18. (2018) CRYSTAL QUALITY ENHANCEMENT OF SEMI-POLAR (11-22) InGaN/GaN-BASED LED GROWN ON M-PLANE SAPPHIRE SUBSTRATE VIA MOCVD, OMAR AYAD FADHIL
  19. (2018) DEVELOPMENT OF SOLUTION PROCESSABLE VERTICAL ORGANIC LIGHT-EMITTING TRANSISTORS, MOHD ARIF BIN MOHD SARJIDAN
  20. (2016) Membrane inserted thermo-electrochemical generator for enhanced power generation, SYED WAQAR HASAN
  21. (2016) Membrane inserted thermo-electrochemical generator for enhanced power generation, SYED WAQAR HASAN
  22. (2015) ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, MAJID AZARANG
  23. (2015) ZINC OXIDE NANOPARTICLES-BASED REDUCED GRAPHENE OXIDE COMPOSITES FOR PHOTOCATALYTIC AND PHOTOVOLTAIC APPLICATIONS, MAJID AZARANG
  24. (2013) STUDY OF THE EFFECT OF DOPING ON THE PHYSICAL PROPERTIES OF PEDOT: PSS FOR APPLICATIONS AS BUFFER LAYER IN ORGANIC SOLAR CELL AND AS P-TYPE MATERIAL IN THERMOELECTRIC DEVICE, ZURIANTI BINTI ABD RAHMAN
  25. (2013) STUDY OF THE EFFECT OF DOPING ON THE PHYSICAL PROPERTIES OF PEDOT: PSS FOR APPLICATIONS AS BUFFER LAYER IN ORGANIC SOLAR CELL AND AS P-TYPE MATERIAL IN THERMOELECTRIC DEVICE, ZURIANTI BINTI ABD RAHMAN
Master
  1. (2025) EFFECT OF B2O3 – TEO2 ON RADIATION SHIELDING PROPERTIES OF 70[XTEO2 – (1-X) B2O3] – 20BI2O3 – 10LI2O GLASS SYSTEM, NUR AINI BINTI MOHAMAD RUSOP
  2. (2025) VAPOR PHASE EPITAXY (VPE) TECHNOLOGY RESEARCH FOR GAN-ON-SI- HIGH ELECTRON MOBILITY TRANSISTOR, NABIL NAJMI BIN NORPIAH
  3. (2025) VAPOR PHASE EPITAXY (VPE) TECHNOLOGY RESEARCH FOR GAN ON-SI HIGH-ELECTRON MOBILITY TRANSISTOR, NURIN JAZLINA BINTI ZAIDI
  4. (2025) Design and simulation of high-thermal-conductivity silicon substrate QVT-GaN power devices., SU BO
  5. (2025) THE EFFECT ON MAGNETORESISTANCE AND ELECTRORESISTANCE BEHAVIOURS IN MONOVALENT DOPED LA0.85AG0.15MN1-XGAXO3 MANGANITES., NUR AZENI BINTI MOHAMAD RUSOP
  6. (2025) DESIGN AND IMPLEMENTATION OF RESONANT CONVERTER WITH GALLIUM NITRATE (GAN) TECHNOLOGY FOR ELECTRIC VEHICLE (EV) CHARGING, MUHAMMAD RIDZUAN BIN RAZALI
  7. (2024) EVALUATION OF MAGNESIUM DELTA-DOPED p-GaN VIA ANNEALING TEMPERATURE AND ANNEALING TIME, GAO YU
  8. (2024) Structure Enhancement of Gallium Nitride on Silicon (111) with a Composition-Graded Aluminium Gallium Nitride Buffer via MOCVD, MARWAN BIN MANSOR
  9. (2022) MG DELTA DOPING ON P-TYPE GALLIUM NITRIDE BY PALE TECHNIQUE VIA MOCVD, MASLIYANA BINTI ABDUL GHANI
  10. (2022) EFFECT OF OXIDATION TOWARDS INTERFACIAL LAYER OF INDIUM-TIN-OXIDE NANOSTRUCTURE AND p-TYPE GALLIUM NITRIDE, NORHILMI BIN MOHD ZAHIR
  11. (2021) EFFECT OF GAS FLOW RATE AT FIXED V/III RATIO AND PRESSURE TOWARD SEMI-POLAR (112 ̅2) GALLIUM NITRIDE CRYSTALLOGRAPHIC AND SURFACE MORPHOLOGY, OOI CHONG SENG
  12. (2017) GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, SIVANATHAN A/L PARIASAMY @CHELLADURAI
  13. (2017) GROWTH OF GaN-BASED LED ON C-PLANE GaN SUBSTRATE, SIVANATHAN A/L PARIASAMY @CHELLADURAI
  14. (2016) OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, YUSNIZAM BIN YUSUF
  15. (2016) OPTIMIZATION OF AlN/GaN STRAINED-LAYER SUPERLATTICE FOR GaN EPITAXY ON Si(111) SUBSTRATE, YUSNIZAM BIN YUSUF
  16. (2014) THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, NAJWA BINTI SURANI
  17. (2014) NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, NUR AMEERA BT ANUAR
  18. (2014) INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, MAZWAN BIN MANSOR
  19. (2014) EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, MOHD SOBRI BIN ABD RAZAK
  20. (2014) EFFECT OF ANNEALING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NICKEL/INDIUM TIN OXIDE (NI/ITO) NANOSTRUCTURES PREPARED BY RF MAGNETRON SPUTTERING, MOHD SOBRI BIN ABD RAZAK
  21. (2014) NANOCOLUMNAR ZINC OXIDE AS A TRANSPARENT CONDUCTIVE OXIDE FILM FOR A BLUE INGAN-BASED LIGHT EMITTING DIODE, NUR AMEERA BT ANUAR
  22. (2014) INVESTIGATION ON ZINC OXIDE BASED NANOSTRUCTURES AS CURRENT SPREADING LAYER FOR LIGHT EMITTING DIODES, MAZWAN BIN MANSOR
  23. (2014) THE ENHANCEMENT OF INDIUM TIN OXIDE NANOCOLUMNAR PROPERTIES AS TRANSPARENT CONDUCTING OXIDE LAYER FOR A BLUE INDIUM GALLIUM NITRIDE BASED LIGHT EMITTING DIODE, NAJWA BINTI SURANI
  24. (2012) MODELING AND SIMULATION OF METAL ORGANIC HALIDE VAPOR PHASE EPITAXY GROWH CHAMBER REACTOR, NURUL ZIEYANA MOHAMED ANNUAR
  25. (2012) MODELING AND SIMULATION OF METAL ORGANIC HALIDE VAPOR PHASE EPITAXY GROWH CHAMBER REACTOR, NURUL ZIEYANA MOHAMED ANNUAR

TEACHING

Master
  1. (2019) SQA7009 - Semiconductor Technology
  2. (2018) SMGS6341 - Semiconductor Device
  3. (2018) SQA7008 - Semiconductor Devices
  4. (2017) SMGS6341 - Semiconductor Device
  5. (2016) SMGS6341 - Semiconductor Device
  6. (2013) SMGS6341 - Semiconductor Device
  7. (2012) SMGS6341 - Semiconductor Device
Bachelor
  1. (2019) SIF2021 - Digital Electronics
  2. (2019) SMEB4302 - Advanced Materials Processing Technology
  3. (2018) SIF2009 - Electronics Practical
  4. (2018) SIF2020 - Electronics Ii
  5. (2018) SIF2021 - Digital Electronics
  6. (2018) SMEB3201 - Semiconductor Materials and Devices
  7. (2018) SMES3122 - Digital Electronics
  8. (2017) SIF2017 - Semiconductor Devices
  9. (2017) SIF2021 - Digital Electronics
  10. (2017) SMEB3201 - Semiconductor Materials and Devices
  11. (2017) SMES4321 - Semiconductor Devices
  12. (2016) SMES3122 - Digital Electronics
  13. (2015) SIF1006 - Practical Physics 1
  14. (2015) SMES1271 - Physics Practical
  15. (2015) SMES3122 - Digital Electronics
  16. (2014) SMEB2203 - Optical Properties of Materials
  17. (2014) SMES1271 - Physics Practical
  18. (2013) SMEB2203 - Optical Properties of Materials
  19. (2013) SMES1271 - Physics Practical
  20. (2011) SMES2104 - Electronics
  21. (2011) SMES3122 - Digital Electronics
  22. (2011) SMES3171 - Microprocessor and Microcomputer Laboratory
  23. (2010) SMES3122 - Digital Electronics
  24. (2010) SMES3171 - Microprocessor and Microcomputer Laboratory

PATENT/ IPR

  • A Method of Depositing Gallium Nitride on a substrate
    PATENT
  • METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE
    PATENT
  • Method Of Growing Semipolar Gallium Nitride Film
    PATENT
  • Method to fabricate semi-polar gallium nitride (11-22) on m-plane (1-100) using 1-step growth approach by MOCVD
    PATENT
  • METHOD FOR FORMING MONOLAYER OR MULTILAYER GRAPHENE
    PATENT
  • Method for forming monolayer or multilayer of graphene
    PATENT
  • METHOD FOR GROWING A SEMI - POLAR Publication Classification GALLIUM NITRIDE EPITAXIAL LAYER USING ALUMINUM NITRIDE / GALLIUM NITRIDE SUPERLATTICES
    Patent (International)
  • A METHOD OF PRODUCING TRANSPARENT NANOCOLUMNS AS CURRENT SPREADING LAYER
    PATENT
  • Method of Fabricating Zinc oxide as transparent conductive oxide layer
    PATENT
  • Method of preparing nickel and indium tin oxide as transparent conductive oxide layer
    PATENT
  • A method for uniform nanocolumnar transparent conducting oxide (TCO) layer made of pristine indium tin oxide (ITO).
    PATENT
  • A method for transparent conductive oxide (TCO) layer with nanacolumn nickel/indium tin oxide (Ni/ITO) structures.
    PATENT

SOCIAL RESPONSIBILITY ACTIVITIES

  • Pensyarah Pembimbing - Ldmrc Young Scientist Bootcamp During Minggu Sains Negara 2023, (26 Jul 2023 - 26 Jul 2023) (National)
  • Panel Penemuduga Bagi Kemasukan Ke Program Pengajian Peringkat Ijazah Sarjana Muda Ambilan Sesi Akademik 2022/2023, (13 Jul 2022 - 17 Jul 2022) (University)
  • Pelantikan Ahli Jawatankuasa Mass Chapter UM (ajk Kerja), (15 Feb 2022 - 14 Feb 2023) (National)
  • Website Committee for Malaysia National Physics Conference / Persidangan Fizik Kebangsaan (perfik) 2016, (21 Dec 2016 - 22 Dec 2016)
  • Crest Gan-on-gan Epitaxy Program Oversight Committee Member and Technical Committee Member, (22 Jan 2015 - 31 Dec 2020)
  • Organizing Committee Member for The "first Meeting of Malaysia Nitrides Research Group", 7 April 2014, Informm Auditorium Room, Universiti Sains Malaysia, Pulau Pinang, Malaysia., (07 Apr 2014 - 07 Apr 2014)
  • Panel Member for Value Management Lab of Gallium Nitride On Gallium Nitride (gan-on-gan) Project Initiative by Collaborative Research in Engineering, Science & Technology (crest), 10-14 March 2014, Sains@usm Building, Pulau Pinang, Malaysia., (10 Mar 2014 - 14 Mar 2014)
  • Head of Protocol Committee, International Conference On Solid State Science and Technology 2012, 18-20 December 2012, Melaka, Malaysia., (18 Dec 2012 - 20 Dec 2012)
  • President of Nagoya Institute of Technology Alumni Malaysia (nitmaa), (28 Nov 2010)